K3KL3L30CM-BGCU vs K3KL3L30QM-JGCT 比較
詳細な並列比較: K3KL3L30CM-BGCU メーカー: Samsung Electronics および K3KL3L30QM-JGCT メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K3KL3L30CM-BGCU | K3KL3L30QM-JGCT |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $0.00 |
| メモリタイプ | LPDDR5X SDRAM (Volatile DRAM) | Volatile - DRAM |
| メモリサイズ | 64 Gb (8 GB) | 64 Gb |
| データレート | 8533 Mbps | — |
| Memory Organization | x64 | x64 |
| Technology | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) | LPDDR5X |
| パッケージ | FBGA-496 (BGCU) | [DATA_NEEDED: package code and dimensions] |
| 実装タイプ | Surface Mount | Surface Mount |
| Die Configuration | Stacked multi-die DRAM | — |
| インターフェース | LPDDR5X (standard LPDDR ball interface) | — |
| Application Segment | AI devices and automotive | — |
| Power Efficiency | Approx. 25% better than previous LPDDR5 generation (per Samsung) | — |
| Speed Improvement | Up to 1.25x faster than previous generation (per Samsung) | — |
| Supply Voltage Class | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| MSLレベル | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Place of Origin (per distributor listing) | Johor, Malaysia | — |
| Maximum Data Rate | — | 7500 Mbps/pin |
| インターフェースタイプ | — | Parallel LPDDR5X |
| Clock Rate | — | [DATA_NEEDED: clock rate] |
| Supply Voltage VDD | — | [DATA_NEEDED: VDD voltage] |
| Supply Voltage VDDQ | — | [DATA_NEEDED: VDDQ voltage] |
| Access Time / Latency | — | [DATA_NEEDED: CAS latency] |
| Ball Count | — | [DATA_NEEDED: ball count] |
| Product Status | — | Sampling (per distributor data) |
| Packaging | — | Plateau (tray style, per distributor data) |