K3LK3L30CM-BGCU vs K3KL2L20DM-JGCT 比較
詳細な並列比較: K3LK3L30CM-BGCU メーカー: Samsung Electronics および K3KL2L20DM-JGCT メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K3LK3L30CM-BGCU | K3KL2L20DM-JGCT |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $29.60 | $20.80 |
| メモリタイプ | LPDDR5X SDRAM (Low Power Double Data Rate 5X) | LPDDR5X SDRAM |
| Density | 64 Gb (8 GB) | 48 Gb |
| データレート | 8533 Mbps per pin | 7500 Mbps |
| メモリ構成 | [DATA_NEEDED: organization / bus width] | x64 |
| パッケージ | 496-ball FBGA (BGC) | 441-ball FBGA |
| 実装タイプ | Surface Mount (BGA) | Surface Mount |
| Die Configuration | Stacked DRAM die (multi-die package) | — |
| Supply Voltage VDD | [DATA_NEEDED: VDD voltage] | — |
| Supply Voltage VDDQ | [DATA_NEEDED: VDDQ voltage] | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Power Efficiency | Approx. 25% better than previous LPDDR generation (per Samsung LPDDR5X announcement) | — |
| Speed vs Prior Generation | Up to 1.25x faster than previous generation (per Samsung LPDDR5X announcement) | — |
| Target Applications | AI devices, in-vehicle devices, mobile computing | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | unknown |
| MSLレベル | [DATA_NEEDED: moisture sensitivity level] | — |
| Packaging | [DATA_NEEDED: tray / reel and standard quantity] | — |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| インターフェース | — | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |