K9PRGY8S7M-CCK0 vs K9DUGB8S7M 比較

詳細な並列比較: K9PRGY8S7M-CCK0 メーカー: Samsung Electronics および K9DUGB8S7M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Samsung Electronics
K9PRGY8S7M-CCK0 K9PRGY8S7M-CCK0 - Samsung NAND Flash Memory BGA | Samsung

K9PRGY8S7M-CCK0 - Samsung NAND Flash Memory BGA | Samsung

K9PRGY8S7M-CCK0 ✓ 生産中
Samsung Electronics
K9DUGB8S7M K9DUGB8S7M - Samsung NAND Flash Memory IC | Samsung

K9DUGB8S7M - Samsung NAND Flash Memory IC | Samsung

K9DUGB8S7M ✓ 生産中

仕様比較

パラメータ K9PRGY8S7M-CCK0 K9DUGB8S7M
ブランド Samsung Electronics Samsung Electronics
カテゴリ EEPROM Memory ICs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.00 $0.00
メモリタイプ NAND Flash NAND Flash
Manufacturer Samsung Electronics Samsung Electronics
パッケージ BGA (surface mount) —
実装タイプ Surface Mount Surface Mount
RoHS ステータス Lead free / RoHS compliant [DATA_NEEDED: RoHS compliance]
Density [DATA_NEEDED: density] —
Memory Bus Width [DATA_NEEDED: bus width] —
電源電圧 [DATA_NEEDED: supply voltage] [DATA_NEEDED: supply voltage range]
インターフェース [DATA_NEEDED: interface type] [DATA_NEEDED: interface type (x8/x16 asynchronous NAND)]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
動作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Program/Erase Cycles [DATA_NEEDED: P/E cycle endurance] —
MSLレベル [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Package Ball Count [DATA_NEEDED: BGA ball count] —
Ordering Code — K9DUGB8S7M-DCK0
Memory Capacity — [DATA_NEEDED: total capacity]
Package Type — [DATA_NEEDED: package type]
Access Time / Timing Grade — [DATA_NEEDED: speed grade]
Endurance — [DATA_NEEDED: program/erase cycles]
ECC Requirement — [DATA_NEEDED: ECC scheme]

データシート&リソース

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