MPXV10GC7U vs MPVZ5150GC7U 比較

詳細な並列比較: MPXV10GC7U メーカー: NXP Semiconductors および MPVZ5150GC7U メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

NXP Semiconductors
MPXV10GC7U MPXV10GC7U - 10 kPa Vented Gauge Pressure Sensor | NXP

MPXV10GC7U - 10 kPa Vented Gauge Pressure Sensor | NXP

MPXV10GC7U ✓ 生産中
NXP Semiconductors
MPVZ5150GC7U MPVZ5150GC7U - 150kPa Vented Gauge Pressure Sensor | NXP

MPVZ5150GC7U - 150kPa Vented Gauge Pressure Sensor | NXP

MPVZ5150GC7U ✓ 生産中

仕様比較

パラメータ MPXV10GC7U MPVZ5150GC7U
ブランド NXP Semiconductors NXP Semiconductors
カテゴリ Pressure Sensors Pressure Sensors
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $6.10 $8.64
Pressure Type Vented Gauge Vented Gauge
Operating Pressure Range 0 kPa to 10 kPa (0 PSI to 1.45 PSI) 0 kPa to 150 kPa (0 PSI to 21.76 PSI)
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
出力タイプ Analog Wheatstone Bridge (uncompensated mV) Analog Voltage (ratiometric)
Full-Scale Output 0 mV to 35 mV at 3 V supply —
Sensitivity 3.5 mV/kPa nominal —
電源電圧 3 V to 6 V (3 V typical excitation) 4.75 V to 5.25 V
電源電流 [DATA_NEEDED: supply current] [DATA_NEEDED: supply current]
Input Impedance [DATA_NEEDED: bridge input impedance] —
Output Impedance [DATA_NEEDED: bridge output impedance] —
動作温度 [DATA_NEEDED: operating temperature range] -40 °C to +125 °C
Port Style Top port, 0.13" (3.18 mm) tube inlet Top Port, Male 0.13" (3.17 mm) Tube
パッケージ 8-DIP (0.550", 13.97 mm) through-hole 8-DIP (Case 867F, 10.67 x 10.67 x 12.96 mm)
実装タイプ Through-Hole Through Hole
Media Compatibility Dry non-corrosive gases (reference port vented to ambient) Dry air and non-corrosive gases (silicone gel isolation)
Compensation None on chip - external calibration required —
RoHS ステータス [DATA_NEEDED: RoHS compliance] Compliant
Maximum Overload Pressure — [DATA_NEEDED: maximum overload pressure]
出力電圧範囲 — 0.2 V to 4.7 V
Pressure Accuracy — ±1.5 % (0 °C to 85 °C)
Storage Temperature — [DATA_NEEDED: storage temperature]
Response Time — 1.0 ms (typical)
Technology — Piezoresistive (MEMS) with ASIC signal conditioning

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