MRF6S9130HSR5 vs MRF6S9130HR5 比較
詳細な並列比較: MRF6S9130HSR5 メーカー: NXP Semiconductors および MRF6S9130HR5 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
NXP Semiconductors
MRF6S9130HR5 - 27W 880MHz LDMOS RF Power Transistor | NXP
MRF6S9130HR5 ⚠ ラストタイムバイ仕様比較
| パラメータ | MRF6S9130HSR5 | MRF6S9130HR5 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | Obsolete | ラストバイ |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $65.00 | $21.90 |
| トランジスタタイプ | LDMOS (N-Channel) | N-Channel Enhancement-Mode LDMOS |
| Technology | RF Power MOSFET | LDMOS (Laterally Diffused MOS) |
| Frequency | 880 MHz | — |
| Gain | 19.2 dB | — |
| Output Power (P1dB) | 27 W (CW) | — |
| Test Voltage (Vdd) | 28 V | — |
| Test Current (Idq) | 950 mA | — |
| Voltage Rated (Vdss) | 68 V | — |
| パッケージ / ケース | NI-780S | NI-780H-2L (ceramic flange) |
| Supplier Device Package | NI-780S | — |
| 実装タイプ | Chassis Mount / Flange | Chassis / Flange Mount |
| Application | N-CDMA, GSM, GSM EDGE base station | — |
| RoHS ステータス | [DATA_NEEDED: verify against specific lot] | — |
| Lead Free | Yes (per NXP migration note) | — |
| Part Status | Obsolete - replaced by MRFE6S9130HSR5 (per PCN12895) | — |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) | — |
| Drain-Source Voltage Rating (VDS) | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V typical |
| Test Frequency | — | 880 MHz |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Output Power (CW) | — | 27 W |
| Power Gain | — | 19.2 dB |
| Test Bias Current (IDQ) | — | 950 mA |
| Polarity | — | N-Channel |
| Mode | — | Enhancement Mode |
| Intended Applications | — | N-CDMA, GSM, GSM EDGE base-station amplifiers |
| Multi-Carrier Capable | — | Yes (MCA) |
| Lead Free Status | — | Lead Free |
| Replacement Note | — | MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3 per PCN12895 |