MRF8S21200HR6 vs MRF8S21200HSR6 比較
詳細な並列比較: MRF8S21200HR6 メーカー: NXP Semiconductors および MRF8S21200HSR6 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
NXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ 生産中仕様比較
| パラメータ | MRF8S21200HR6 | MRF8S21200HSR6 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $62.00 | $96.75 |
| トランジスタタイプ | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET |
| Frequency | 2.11 GHz to 2.17 GHz (2110-2170 MHz) | — |
| Test Voltage | 28 V | 28 V |
| Test Current | 1.4 A | — |
| Power Gain | 18.1 dB | 18.1 dB |
| Output Power (Average) | 48 W | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Configuration | Common Source, 2 elements | — |
| Case Connection | Source | — |
| 実装タイプ | Surface Mount (NI-1230 ceramic flange) | — |
| パッケージ | NI-1230 | — |
| Application | W-CDMA, LTE base station power amplifiers | — |
| Class of Operation | Class AB, Class C | — |
| Surface Mount | Yes | — |
| RoHS ステータス | Compliant | — |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Output Power (Avg, W-CDMA/LTE) | — | 48 W at 28 V |
| Test Current (Quiescent) | — | 1.4 A |
| Minimum Breakdown Voltage (Drain-Source) | — | 65 V |
| Maximum Junction Temperature | — | 225 C |
| Mounting Configuration | — | Surface Mount (NI-1230HS ceramic package) |
| Application Class | — | Class AB, Class C (cellular base station modulation) |
| Peak Reflow Temperature | — | 260 C |
| Number of Elements / Configuration | — | Dual, Common Source, 2 Elements |
| Lead Free Status | — | Lead Free |
| Technology | — | Silicon LDMOS (lateral double-diffused MOSFET) |
| Target Modulation | — | W-CDMA, LTE, TD-LTE |