RTAX2000DL-1CQ352B vs RTAX2000D-1CQ352B 比較
詳細な並列比較: RTAX2000DL-1CQ352B メーカー: Microchip Technology および RTAX2000D-1CQ352B メーカー: Microchip Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Microchip Technology
RTAX2000DL-1CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000DL-1CQ352B ✓ 生産中Microchip Technology
RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352B ✓ 生産中仕様比較
| パラメータ | RTAX2000DL-1CQ352B | RTAX2000D-1CQ352B |
|---|---|---|
| ブランド | Microchip Technology | Microchip Technology |
| カテゴリ | FPGA & CPLD | FPGA & CPLD |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $3,420.00 | $3,120.00 |
| Equivalent System Gates | 2000000 | 2,000,000 |
| Logic Cells | 29568 | — |
| Configurable Logic Blocks (CLBs) | 19712 | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Maximum Combinatorial Delay | 0.930 ns | — |
| DSP Mathblocks (max) | 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | 540 kbits (with optional EDAC protection) | Up to 540 kbits SRAM with optional EDAC |
| Technology | CMOS, antifuse (OTP, nonvolatile) | Antifuse (nonvolatile), Digital CMOS |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parametric) | 200 krad (Si) | — |
| パッケージ | CQFP-352 (ceramic quad flat pack) | 352-pin Ceramic Column Grid Array (CQ352) |
| Terminal Count | 352 | — |
| Input / Output Terminals | 166 input, 166 output | — |
| 実装タイプ | Surface Mount | Surface Mount (ceramic column grid array) |
| Radiation Tolerance Class | Radiation-tolerant (space-flight) | — |
| Configuration | Live at power-up (antifuse, single chip) | Live at power-up, no external configuration device (antifuse) |
| Family | — | RTAX-S/SL and RTAX-DSP (RTAX2000D) |
| CLBs (Logic Cells) | — | 19,712 CLBs / 29,568 logic cells (per family organization) |
| DSP Mathblocks | — | Up to 120 (18-bit x 18-bit MAC) |
| DSP Performance | — | 125 MHz 18-bit x 18-bit multiply-accumulate |
| Total Ionizing Dose | — | 300 krad (Si) functional / 200 krad (Si) with operation |
| Core Supply Voltage | — | 1.5 V nominal (1.425 V to 1.575 V) |
| Speed Grade | — | -1 |
| Temperature Range | — | Commercial (C) |
| Routing Features | — | Segmentable clocks, chip-wide highway routing, carry logic |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Application Domain | — | Space-flight, radiation-tolerant |