RTAX2000DL-1CQ352E vs RTAX2000DL-CQ352B 比較
詳細な並列比較: RTAX2000DL-1CQ352E メーカー: Microchip Technology および RTAX2000DL-CQ352B メーカー: Microchip Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Microchip Technology
RTAX2000DL-1CQ352E - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352E ✓ 生産中Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ 生産中仕様比較
| パラメータ | RTAX2000DL-1CQ352E | RTAX2000DL-CQ352B |
|---|---|---|
| ブランド | Microchip Technology | Microchip Technology |
| カテゴリ | FPGA & CPLD | FPGA & CPLD |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2,300.00 | $0.00 |
| Equivalent System Gates | 2000000 gates | 2,000,000 |
| Configurable Logic Blocks (CLBs) | 19712 | — |
| Logic Cells | 29568 | [DATA_NEEDED: Logic Cells] |
| DSP Mathblocks | Up to 120 | Up to 120 |
| DSP MAC Performance | 125 MHz 18-bit x 18-bit multiply-accumulate | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC | Up to 540 kbits with optional EDAC protection |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | — |
| Technology | Digital CMOS, antifuse (nonvolatile, one-time programmable) | — |
| Total Ionizing Dose (Functional) | 300 krad(Si) | 300 krad (Si) |
| Total Ionizing Dose (Parametric rating) | 200 krad(Si) | — |
| User I/O | 166 input and 166 output terminals | — |
| パッケージ | 352-terminal CQFP (Ceramic Quad Flat Pack), column E lead finish | 352-terminal ceramic CQFP, metal-sealed |
| 実装タイプ | Surface Mount | Surface Mount |
| Family | RTAX-DSP / RTAX-SL radiation-tolerant FPGAs | — |
| Configuration | Live at power-up, no external configuration device | Live at power-up, no external boot PROM required |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Speed Grade | -1 (standard) | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | — |
| CLBs | — | 19,712 |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Terminal Pitch | — | 0.500 mm |
| Application Domain | — | Space flight systems |