RTAX2000SL-1CGS624EV vs RTAX2000S-1CG624PROTO 比較
詳細な並列比較: RTAX2000SL-1CGS624EV メーカー: Microchip Technology および RTAX2000S-1CG624PROTO メーカー: Microchip Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Microchip Technology
RTAX2000SL-1CGS624EV - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1CGS624EV ✓ 生産中Microchip Technology
RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CG624PROTO ✓ 生産中仕様比較
| パラメータ | RTAX2000SL-1CGS624EV | RTAX2000S-1CG624PROTO |
|---|---|---|
| ブランド | Microchip Technology | Microchip Technology |
| カテゴリ | FPGA & CPLD | FPGA & CPLD |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $0.00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-S/SL Radiation-Tolerant FPGA |
| Equivalent System Gates | 2,000,000 (family up to 4,000,000) | 2000000 |
| Logic Cells | 32,256 | 32256 |
| CLBs | 21,504 | — |
| ASIC Gate Equivalent | 250,000 additional | — |
| Technology | CMOS anti-fuse, one-time programmable | CMOS antifuse (one-time programmable) |
| Speed Grade | -1 | -1 |
| パッケージ | 624-terminal ceramic CGA (CGS624) | CCGA-624 (CG624 ceramic column grid array) |
| Terminals | 624 | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | 540 kbits (family max, with optional EDAC) |
| Configuration | Live at power-up (no external boot device) | Live at power-up (nonvolatile antifuse) |
| Radiation Tolerance | Radiation-tolerant (TID/SEE per datasheet qualification) | — |
| Applications | Space-flight systems | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Heritage | RTAX2000SL recognized as heritage-equivalent to RTAX2000S (per Microchip and ESA/ESCC REP 010 industry practice) | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Core Voltage | [DATA_NEEDED: core supply voltage] | — |
| MSLレベル | [DATA_NEEDED: moisture sensitivity level] | — |
| Configurable Logic Blocks (CLBs) | — | 21504 |
| User I/Os (family max) | — | 684 |
| Total Ionizing Dose (functional) | — | 300 krad (Si) |
| Total Ionizing Dose (parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Maximum System Frequency | — | 350 MHz (family performance) |
| Qualification Flow | — | PROTO (engineering prototype) |
| RoHS ステータス | — | [DATA_NEEDED: RoHS status] |