2STF2220 - 1.5A PNP Power Transistor, 20V, SOT-89 | STMicroelectronics
部品番号: 2STF2220 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.72 | $0.72 |
| 10 | $0.58 | $5.80 |
| 100 | $0.46 | $46.00 |
| 500 | $0.38 | $190.00 |
| 1,000 | $0.31 | $310.00 |
| 3,000 | $0.26 | $780.00 |
2STF2220 概要
A PNP bipolar transistor is a type of BJT where the base-emitter junction is forward-biased when the base is pulled below the emitter voltage, allowing current to flow from emitter to collector. PNP transistors complement their NPN counterparts and are commonly used in high-side switching, current mirroring, push-pull output stages, and analog signal inversion. The SOT-89-3 package family sits in the discrete semiconductors -> transistors category hierarchy, providing a compact SMD footprint with a thermal pad that improves heat dissipation relative to smaller SOT-23 housings.
The 2STF2220 exhibits a DC current gain (hFE) ranging from 200 to 600, allowing reliable switching with very low base drive currents. Its collector-emitter saturation voltage is specified at low millivolt levels under moderate loads, reducing conduction losses and improving efficiency in linear regulators and load switches. The transition frequency of at least 100 MHz supports use in moderate-bandwidth amplifier and switching applications. The combination of high gain and low VCE(sat) simplifies driver design, reducing the need for complex base-drive circuitry.
The PB-HDC process technology optimizes the trade-off between current-handling capability and on-state losses, enabling the 2STF2220 to replace larger PNP devices in space-constrained designs. The SOT-89-3 footprint includes a metal tab connected to the collector, which serves as a thermal pad and must be soldered to a copper pour for rated performance. This design philosophy makes the 2STF2220 suitable for portable power management, battery protection circuits, and load switching subsystems.
Typical applications include power management in portable and battery-powered devices, low-side/high-side load switching, DC-DC converter peripheral circuits, MOSFET gate drivers, signal amplification in audio front-ends, LED driving stages, and complementary push-pull output stages paired with an NPN device such as the 2STF1360.
When designing with this transistor, ensure the collector pad of the SOT-89-3 package is soldered to an adequate copper area to achieve rated thermal performance. Provide a base resistor to limit inrush during turn-on, and respect the maximum emitter-base voltage of 5 V to prevent reverse breakdown of the base-emitter junction.
This page synthesizes distributor pricing, drop-in alternative candidates, and practical PCB thermal guidance not found in the standalone manufacturer datasheet, helping engineers quickly evaluate the 2STF2220 for both new designs and replacement scenarios.
ドロップイン代替品: 2STF2220 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
2STF2220
✅ ドロップイン✓ 在庫あり
$0.26 / 個
データシートを見る →2STF1360
✅ ドロップイン📋 参考代替品（カタログ未掲載）
2STF2220 最大定格＆電気的特性
| トランジスタタイプ | PNP |
| Technology | PB-HDC (Power Bipolar High Density Current) |
| パッケージ | SOT-89-3 |
| 実装タイプ | Surface Mount |
| Maximum Collector Current (Continuous) | 1.5 A |
| Maximum Collector-Emitter Voltage (VCEO) | -20 V |
| Maximum Collector-Base Voltage (VCBO) | -20 V |
| Maximum Emitter-Base Voltage (VEBO) | -5 V |
| Maximum Collector Power Dissipation (Pc) | 1.4 W |
| DC Current Gain (hFE) | 200 to 600 |
| 遷移周波数（ft） | 100 MHz minimum |
| Polarity | PNP |
| 動作温度範囲 | -65C to +150C (junction) |
| Pin Configuration | Pin 1: Base, Pin 2: Collector, Pin 3: Emitter (per SOT-89 standard) |
| RoHS ステータス | Compliant |
| Lead-Free Finish | Yes |
2STF2220 ピン構成
| ピン 1 | Base — Base control terminal (drive below emitter to turn on) |
| ピン 2 | Collector — Collector terminal (connected to thermal tab) |
| ピン 3 | Emitter — Emitter terminal (system ground for high-side PNP switching) |
主な用途
2STF2220 の用途: 6 件s: Portable Power Management, Battery Protection and Discharge Control, DC-DC Converter Synchronous Rectifier Companion, MOSFET Gate Driver Stage, Audio Output Push-Pull Stage, LED Driver Current Sink/Source.
Portable Power Management
The 2STF2220's 1.5 A collector current and 1.4 W power dissipation in a SOT-89-3 package suit portable power management blocks where PCB area is constrained. The PNP configuration makes it ideal for high-side load switches between a battery rail and downstream DC-DC converters, while the 20 V VCEO safely tolerates 1S Li-ion charge spikes. The PB-HDC process low VCE(sat) reduces conduction loss compared to generic PNP transistors, improving battery run-time. Place a 1 kOhm base resistor to limit inrush and ensure the SOT-89 thermal tab is soldered to at least 25 mm^2 of copper for rated dissipation.
おすすめ
Battery Protection and Discharge Control
The 2STF2220 PNP transistor functions as a high-side disconnect switch in single-cell Li-ion battery protection circuits, where the -20 V VCEO easily exceeds the 4.2 V max battery voltage. Its 200-600 hFE allows base drive from low-current protection ICs without external driver stages, while the 1.5 A continuous rating covers most USB-powered discharge paths. Place the device between the battery positive terminal and the system rail, and use the PB-HDC low saturation characteristic to minimize voltage drop across the protection switch, preserving battery life during peak loads.
おすすめ
DC-DC Converter Synchronous Rectifier Companion
In non-synchronous buck or boost converters, the 2STF2220 acts as a PNP synchronous rectifier complementing the main NPN switching transistor. Its low VCE(sat) due to the PB-HDC process reduces rectifier losses versus Schottky diodes at currents below 1 A, eliminating reverse-recovery concerns at 100 kHz+ switching rates. The 1.4 W SOT-89-3 dissipation comfortably manages the average rectifier loss, and pin 2-compatible (collector tab) layouts simplify PCB routing. Drive the base with the same controller that drives the main switch, properly level-shifted for PNP turn-on.
おすすめ
MOSFET Gate Driver Stage
The 2STF2220's high DC current gain (200-600) makes it suitable as a PNP pre-driver stage in discrete MOSFET gate driver circuits, especially where gate-charge currents exceed the capability of typical logic-level outputs. The 20 V VCEO supports driving power MOSFETs with up to 20 V gate-drive voltage, and the 100 MHz transition frequency enables switching at 1 MHz+ PWM rates. Use the PNP configuration to source current into the gate for fast turn-on, paired with an NPN device such as the 2STF1360 for the complementary pull-down path.
おすすめ
Audio Output Push-Pull Stage
The 2STF2220 PNP transistor paired with its NPN complement 2STF1360 forms a classic class-AB push-pull output stage for low-power audio amplifiers. The 1.5 A current capability supports headphone-drive outputs up to 100 mW into 32 Ohm loads, while the high hFE minimizes base drive requirements from the preceding op-amp or driver stage. PB-HDC low saturation reduces crossover distortion at the output transition point, improving THD performance. The matched SOT-89-3 thermal footprint of the complementary pair enables symmetrical PCB layout with equal copper area for thermal balance.
おすすめ
LED Driver Current Sink/Source
The 2STF2220 PNP transistor operates as a high-side current source for LED strings, where its 1.5 A continuous rating drives high-brightness LEDs at constant current. Place the device in series with the LED anode, sensing current with an emitter resistor to ground. The low VCE(sat) of the PB-HDC process reduces headroom loss compared to standard PNP BJTs, allowing wider LED string voltages from the same supply. The 20 V VCEO accommodates LED stacks up to 4 series white LEDs at full 20 mA drive plus margin.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: 2STF2220 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | 2STF2220 | 2STF1360 |
|---|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package | SOT-89-3 | SOT-89-3 - same | SOT-89-3 - same |
| Transistor Type | PNP | PNP | NPN (complement) |
| Collector Current (max) | 1.5 A | 1.5 A | 1.5 A |
| VCEO Breakdown | -20 V | -20 V | +20 V |
| Power Dissipation | 1.4 W | 1.4 W | 1.4 W |
主な差別化要因
- PB-HDC process delivers high hFE with low VCE(sat) （vs Generic PNP transistors in SOT-89 (e.g., legacy 2SB-series))
- True SOT-89-3 footprint match with NPN complement （vs 2STF1360 (NPN complement))
- Compact SOT-89-3 thermal footprint （vs Larger DPAK-package PNP equivalents (e.g., MJD32C4T4))
設計ノート
Estimated: at VCE = -5 V and IC = 1 A continuous, the 2STF2220 dissipates approximately 5 W which is above the SOT-89-3 package rating of 1.4 W. Sustained high-current operation at high VCE requires derating to keep junction temperature below 150 C; solder the collector tab to at least 25 mm^2 of copper pour on the PCB and limit duty cycle for pulsed loads. For continuous 1 A operation, keep VCE below -2 V to remain within the package thermal envelope.
The SOT-89-3 collector pin (Pin 2) is internally connected to the metal thermal tab on the underside of the package; per the STMicroelectronics datasheet mechanical drawing, the PCB land pattern MUST include copper beneath the tab for rated thermal performance. Use at least 25 mm^2 of 2 oz copper pour connected to Pin 2, and provide thermal vias (0.3 mm diameter, 0.5 mm pitch) to inner plane for additional heat spreading in production designs.
Do not exceed the -5 V VBE breakdown - the 2STF2220's emitter-base junction is rated for only 5 V reverse bias. In high-side PNP switching, ensure the base is never driven more than 5 V above the emitter or the device will suffer permanent hFE degradation. Place a base-emitter resistor (typically 10 kOhm) to guarantee off-state bias when the control signal is disconnected.
コンプライアンス情報
RoHS and REACH compliance per STMicroelectronics product page. Not AEC-Q100 qualified - this is not an automotive-grade part per the datasheet. Halogen-free status not stated in the verified data.
