BFP780H6327XTSA1 - SiGe NPN RF Transistor 6.1V | Infineon
部品番号: BFP780H6327XTSA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.83 | $0.83 |
| 10 | $0.76 | $7.60 |
| 100 | $0.68 | $68.00 |
| 500 | $0.6 | $300.00 |
| 1,000 | $0.54 | $540.00 |
BFP780H6327XTSA1 概要
An RF bipolar junction transistor (BJT) is a discrete semiconductor device used to amplify radio-frequency signals in the transmit or receive chain of wireless systems. Within the component hierarchy it sits under discrete semiconductors > transistors > bipolar RF transistors, and it competes with pHEMT and GaAs MMIC amplifiers where cost, linearity and bias flexibility matter.
Key features include a minimum noise figure (NFmin) of 1.2 dB at 900 MHz (5 V, 30 mA bias), an output third-order intercept point (OIP3) of 34.5 dBm at 900 MHz (5 V, 90 mA), and an output P1dB compression point (OP1dB) of 23 dBm at 900 MHz. The maximum RF input power (PRFin,max) is 20 dBm, providing robustness against mismatch and overload events.
Technically, the BFP780 family is built on Infineon's silicon-germanium process, which offers higher transition frequency and improved linearity per milliamp compared with standard silicon BJTs, making it attractive for driver-amplifier stages where adjacent-channel power must be minimized. The DC current gain hFE is at least 85 at 90 mA, 5 V, simplifying bias network design. Operating junction temperature is rated to 150 C.
Typical applications include 900 MHz ISM-band driver amplifiers, cellular and LPWAN transmitter driver stages, general-purpose RF gain blocks from HF through UHF, and low-noise amplifier front ends where NFmin of 1.2 dB is acceptable.
When designing with this device, plan external input/output matching for your band of interest and verify stability across bias conditions, since the transistor is not internally matched. Thermal layout on the PCB directly affects power handling in the SOT-343 footprint.
This page synthesizes distributor pricing, verified specifications, alternatives and practical design notes not found in the manufacturer datasheet alone, as of 2026-10-04.
ドロップイン代替品: BFP780H6327XTSA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
BFP780FH6327XTSA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
BFP784H6327XTSA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
BFP780H6327XTSA1 最大定格＆電気的特性
| トランジスタタイプ | NPN Silicon-Germanium RF BJT |
| コレクタ-エミッタ間電圧（Vceo） | 6.1 V |
| Collector Current (IC Max) | 120 mA |
| Frequency of Operation | 900 MHz (characterized) |
| Total Power Dissipation | 600 mW |
| Maximum RF Input Power | 20 dBm |
| Minimum Noise Figure (NFmin) | 1.2 dB at 900 MHz, 5 V, 30 mA |
| OIP3 | 34.5 dBm at 900 MHz, 5 V, 90 mA |
| OP1dB | 23 dBm at 900 MHz |
| 直流電流利得（hFE）最小 | 85 @ 90 mA, 5 V |
| 動作接合温度 | 150 C (TJ) |
| パッケージ | PG-SOT343-4-1 (SC-82A, SOT-343), 4-pin (3+tab) |
| 実装タイプ | Surface Mount |
| Internal Matching | No (externally matched) |
| Application | Single-stage high linearity, high gain driver amplifier |
| Packaging | Tape & Reel (T/R) |
BFP780H6327XTSA1 ピン構成
| ピン 1 | B (Base) — Base connection - RF input via matching network and DC bias |
| ピン 2 | E (Emitter/Tab) — Emitter connection via exposed tab - solder to RF ground plane for grounding and heat dissipation |
| ピン 3 | C (Collector) — Collector connection - RF output via matching network and DC feed |
| ピン 4 | E (Emitter lead) — Emitter lead - connect to ground |
主な用途
BFP780H6327XTSA1 の用途: 6 件s: 900 MHz ISM Band Driver Amplifier, Cellular and LPWAN Transmitter Driver Stage, General-Purpose RF Gain Block, Low-Noise Amplifier (LNA) Front End, Test and Measurement RF Signal Chains, Wireless Infrastructure and Repeaters.
900 MHz ISM Band Driver Amplifier
The BFP780H6327XTSA1 is characterized directly at 900 MHz, where it delivers an OIP3 of 34.5 dBm and OP1dB of 23 dBm at 5 V, 90 mA bias, making it well matched to 900 MHz ISM transmitter driver stages such as LoRa, RFID and proprietary sub-GHz radios. Because the device is not internally matched, designers implement external L-C matching networks to transform 50 ohms to the optimum source/load impedances at the band of interest. The 20 dBm maximum RF input power provides robustness against antenna mismatch events. Place the tab directly on a low-inductance RF ground pour to control emitter degeneration and preserve gain.
おすすめ
Cellular and LPWAN Transmitter Driver Stage
In cellular and LPWAN transmit chains, the driver amplifier sets the linearity of the modulated signal before the power amplifier. The BFP780H6327XTSA1's 34.5 dBm OIP3 at 900 MHz and high gain support adjacent-channel power ratio requirements while consuming moderate DC power at 5 V, 90 mA. The SiGe process provides higher gain per stage than standard silicon BJTs, reducing total stage count. External bias stabilization with emitter degeneration and base voltage dividers ensures hFE variations do not shift the quiescent point across the -40 C to 150 C junction temperature range. Verify stability factors across the full bias range during design.
おすすめ
General-Purpose RF Gain Block
As a general-purpose gain block from HF through UHF, the BFP780H6327XTSA1 offers a flexible external-match architecture: designers choose bias (30 mA for noise-critical, 90 mA for linearity-critical) and matching for each band. Its 1.2 dB NFmin at 900 MHz allows use even in receive front ends, while the 23 dBm OP1dB handles transmit-buffer duty. The compact PG-SOT343-4-1 package occupies minimal PCB area, and the exposed tab provides both grounding and heat spreading for the 600 mW dissipation rating. This flexibility makes it a common choice for test equipment, repeaters and SDR front-end gain stages.
おすすめ
Low-Noise Amplifier (LNA) Front End
With NFmin of 1.2 dB at 900 MHz (5 V, 30 mA), the BFP780H6327XTSA1 can serve as a discrete LNA for sub-GHz receivers where an integrated LNA is unavailable or where better linearity than typical LNA ICs is required. Input matching is designed for optimum noise figure rather than maximum gain, using the noise parameters from the Infineon datasheet. The 34.5 dBm OIP3 at higher bias gives this discrete approach better strong-signal handling than many low-cost LNA ICs. Include series feedback inductance intentionally to improve simultaneous noise and conjugate matching at the design frequency.
おすすめ
Test and Measurement RF Signal Chains
Instrumentation and test equipment gain stages benefit from the BFP780H6327XTSA1's combination of gain, linearity and low cost in volume. The high OIP3 (34.5 dBm at 900 MHz, 5 V, 90 mA) minimizes intermodulation when amplifying multi-tone test signals, and external matching lets the same transistor support multiple frequency-banded instrument variants. The 20 dBm input power rating tolerates accidental high-level inputs. Designers should account for the 150 C maximum junction temperature when the device operates continuously at high bias inside enclosed instruments with limited airflow.
おすすめ
Wireless Infrastructure and Repeaters
Repeater, booster and small-cell infrastructure designs operating in sub-GHz bands use the BFP780H6327XTSA1 in driver and pre-driver positions ahead of the final PA. The SiGe process delivers high gain per milliamp, which reduces bias current in cascaded stages and simplifies thermal design at the 600 mW package limit. The 150 C junction rating supports demanding industrial environments, and the 4-pin SOT-343 footprint permits dense multi-stage layouts on standard FR-4. Cascade stability should be verified with S-parameter simulation across temperature and process corners before production release.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BFP780H6327XTSA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BFP780FH6327XTSA1 | BFP784H6327XTSA1 |
|---|---|---|---|
| Package | PG-SOT343-4-1 (SC-82A) | PG-SOT343-4-1 - same | PG-SOT343-4-1 - same |
| Brand | Infineon | Infineon | Infineon |
| Power Dissipation | 600 mW | 600 mW | 600 mW |
主な差別化要因
- High linearity at moderate bias （vs BFP784H6327XTSA1)
- Externally matched design freedom （vs Internally matched MMIC driver amplifiers)
- Robust input power handling （vs BFP780FH6327XTSA1)
設計ノート
The exposed tab of the PG-SOT343-4-1 package is the emitter and primary thermal path. Solder it directly to a contiguous RF ground pour with multiple stitching vias (at least 4) to the ground layer. High emitter inductance from a poor tab connection reduces gain, degrades OIP3 and can cause instability at 900 MHz. Keep the ground pour free of signal traces directly under the device.
Estimated: at 5 V, 90 mA bias, quiescent dissipation is 450 mW against the 600 mW package rating. On a standard FR-4 board with minimal copper, junction temperature rise can approach the 150 C TJ limit at elevated ambient temperatures. Use at least 25 mm x 25 mm of copper area connected to the tab, and derate power dissipation at ambient temperatures above 25 C per the datasheet derating curve.
The BFP780 is not internally matched - substituting it into a footprint designed for an internally matched MMIC will not work. Design input/output matching networks from the datasheet S-parameters and noise parameters for your specific band and bias (30 mA low-noise vs 90 mA high-linearity). Also verify VCEO of 6.1 V is not exceeded by supply transients; add collector series resistance or a supply clamp if the rail can overshoot.
Verify stability across all frequencies, not only the band of interest. Unconditional stability should be confirmed with K-factor and delta checks using datasheet S-parameters at your chosen bias. Where the device is conditionally stable below band, resistive loading or series feedback can be added at the cost of some gain. Simulate across the hFE range (min 85 at 90 mA, 5 V) and temperature extremes.
コンプライアンス情報
RoHS/lead-free per Infineon standard discrete product policy; obtain formal material declarations from the official Infineon product page for this ordering code.
