FDS4410A - 30V 10A N-Ch Logic-Level MOSFET | Fairchild
部品番号: FDS4410A ✗ 生産終了| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1 | $1.00 |
| 10 | $0.85 | $8.50 |
| 100 | $0.62 | $62.00 |
| 500 | $0.48 | $240.00 |
| 1,000 | $0.38 | $380.00 |
FDS4410A 概要
A power MOSFET is a voltage-controlled semiconductor switch used throughout the power management hierarchy (MOSFET -> discrete transistor -> semiconductor). Logic-level MOSFETs are a subclass specified to turn fully on at 4.5 V gate drive, allowing direct interface with 3.3 V and 5 V microcontroller GPIOs, PWM controllers, and battery-management ICs without a dedicated gate-driver stage.
Key features of the FDS4410A include Fairchild's advanced PowerTrench process technology, engineered specifically to minimize on-state resistance while maintaining superior switching performance. The logic-level gate threshold permits low-voltage drive, and the 30 V rating suits low-voltage, battery-powered systems. The compact SOIC-8 footprint provides a well-understood thermal and land-pattern standard for surface-mount assembly.
Technically, the PowerTrench trench-FET structure achieves low RDS(on) through dense vertical trench gating, reducing conduction losses in high-current paths. Because the device is optimized for low-voltage switching, gate charge is modest, supporting efficient PWM operation in synchronous topologies and load-switch circuits. Per the manufacturer description, the process has been especially tailored to minimize on-state resistance, which directly lowers I^2R losses at the 10 A rated current.
Typical applications include low-voltage and battery-powered systems, DC load switches, low-side switching in portable equipment, and power-path management in consumer and industrial boards.
Design consideration: verify RDS(on) at the actual gate-drive voltage in your circuit, since on-resistance rises at reduced VGS, and budget PCB copper on the drain/source pads for thermal dissipation (DigiKey lists 2.5 W (Ta) for the package family).
This page synthesizes distributor pricing context, cross-referenced drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: FDS4410A — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
FDS4410
✅ ドロップイン📋 参考代替品（カタログ未掲載）
FDS4410AZ
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
AO4468
✅ ドロップイン📋 参考代替品（カタログ未掲載）
FDS4410A 最大定格＆電気的特性
| トランジスタタイプ | Single N-Channel MOSFET |
| Technology | PowerTrench (logic level) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 10 A (Ta) |
| Power Dissipation (PD) | 2.5 W (Ta) |
| Gate Drive Type | Logic level (4.5 V drive) |
| パッケージ | SOIC-8 (surface mount) |
| 実装タイプ | Surface Mount |
| Configuration | Single FET |
FDS4410A ピン構成
| ピン 1 | Source — Source terminal (connected to pins 2 and 3) |
| ピン 2 | Source — Source terminal |
| ピン 3 | Source — Source terminal |
| ピン 4 | Gate — Gate control terminal |
| ピン 5 | Drain — Drain terminal (connected to pins 6, 7, 8) |
| ピン 6 | Drain — Drain terminal |
| ピン 7 | Drain — Drain terminal |
| ピン 8 | Drain — Drain terminal |
安全動作領域 (estimated from 30 V / 10 A / 2.5 W ratings)
主な用途
FDS4410A の用途: 6 件s: Battery-Powered Portable Devices, Low-Side DC Load Switching, Synchronous Buck Converter Low-Side FET, Motor Drive Low-Voltage Stages, Power-Path and ORing Management, Industrial and Consumer Board-Level Switching.
Battery-Powered Portable Devices
The FDS4410A fits battery-powered systems because its logic-level gate turns fully on at roughly 4.5 V, matching single-cell and multi-cell battery stacks managed by 3.3 V to 5 V microcontrollers without a dedicated gate-driver stage. According to the Fairchild datasheet description, the device is explicitly suited for low-voltage and battery-powered applications. In a typical load-switch topology, the MOSFET sits as a low-side switch between the load return and ground, with a 100k gate pull-down ensuring the rail stays disconnected during MCU reset. Because conduction loss equals I^2 times RDS(on), the PowerTrench process emphasis on minimized on-state resistance directly extends battery runtime at multi-amp loads. Verify RDS(on) at the actual battery voltage range, since on-resistance degrades as the cell discharges and gate drive falls.
おすすめ
Low-Side DC Load Switching
As a low-side switch, the FDS4410A grounds the negative return of a 12 V load while the source sits at system ground, so its logic-level 4.5 V gate drive interfaces directly with 5 V GPIO, open-drain outputs, or PWM controllers. The 30 V VDS rating leaves comfortable margin above 12 V rails, absorbing modest inductive kick when switching relays, fans, or solenoids with a freewheel diode. At multi-amp loads, PowerTrench low RDS(on) keeps conduction loss and heat low; for example, at 5 A a 20 mohm device dissipates about 0.5 W, manageable with a modest copper pour. Add a 10 to 22 ohm gate resistor to control switching edge speed and EMI, and size the drain copper for surge events such as lamp cold-filament inrush.
おすすめ
Synchronous Buck Converter Low-Side FET
The FDS4410A can serve as the low-side synchronous rectifier in low-voltage buck converters, where the PowerTrench trench process minimizes RDS(on) to cut conduction losses during the freewheeling interval. Its logic-level gate suits controllers with 5 V drive, and modest gate charge reduces transition losses at the switching frequency. In this role the source connects to ground and the drain to the switch node, sharing the SOIC-8 layout with the high-side MOSFET. Performance consideration: at switching frequencies above roughly 200 kHz, verify the datasheet gate-charge figures, because total switching loss scales with frequency; below that, conduction loss dominates and the low RDS(on) is the primary benefit. Keep the switch-node loop tight to limit ringing and EMI.
おすすめ
Motor Drive Low-Voltage Stages
In small DC motor and hobby-grade drive circuits, the FDS4410A works as the low-side PWM switch controlling motor current from a 5 V to 12 V rail. The logic-level threshold permits direct PWM from 5 V microcontroller timers, while the 30 V rating absorbs the flyback pulses that inductive motor windings generate, provided a fast freewheel diode or Schottky is placed across the motor. PowerTrench low on-state resistance minimizes heating during high-duty-cycle PWM; at 10 A continuous, conduction loss equals 10^2 times RDS(on), so keep RDS(on) low and the SOIC-8 pads thermally coupled to at least 1 square inch of copper. For stalled-rotor or stall-current events, check the device safe operating area and add cycle-by-cycle current limiting in the controller.
おすすめ
Power-Path and ORing Management
For power-path management between a battery and an adapter input in portable equipment, the FDS4410A can act as the switched return-path element, while its complementary P-channel siblings handle the high side. Its logic-level gate allows the power-management IC or microcontroller to toggle sources without a charge-pump driver, and the 30 V VDS rating comfortably covers 5 V to 19 V adapter rails common in notebooks and chargers. The PowerTrench process focus on low on-state resistance minimizes the voltage drop and I^2R loss across the switch during sustained load, preserving voltage accuracy at the load. Trade-off to note: an N-channel element in the return path lifts the load ground reference by I times RDS(on), which matters for sensitive analog circuitry, so verify ground-bounce tolerances.
おすすめ
Industrial and Consumer Board-Level Switching
The FDS4410A suits general board-level switching in industrial controls and consumer appliances, where its SOIC-8 surface-mount format supports standard reflow assembly and its 10 A rating covers solenoids, heaters, valves, and indicator drivers on 12 V and 24 V-class low-side rails (with transient margin checked against the 30 V limit). The logic-level gate simplifies interface to PLC-adjacent 5 V logic, and the PowerTrench process delivers low RDS(on) for cool operation in sealed enclosures with limited airflow. Thermal design is the main consideration: 2.5 W (Ta) package dissipation assumes generous copper; estimate junction rise using theta-JA from the datasheet multiplied by your actual conduction loss, and parallel two FETs with individual gate resistors when more current or lower dissipation is required.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: FDS4410A — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | FDS4410 | FDS4410AZ | AO4468 |
|---|---|---|---|---|
| Package | SOIC-8 | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same |
| Brand | Fairchild Semiconductor (onsemi) | onsemi | onsemi | Alpha & Omega Semiconductor |
| Drain-Source Voltage | 30 V | 30 V | 30 V | 30 V |
| Gate Drive Type | Logic level | Logic level | Logic level | Logic level |
| Technology | PowerTrench | PowerTrench | PowerTrench | Trench MOSFET |
主な差別化要因
- PowerTrench process for minimized on-state resistance （vs FDS4410)
- Active-production cross-brand substitute availability （vs AO4468)
- Logic-level gate eliminates driver cost （vs FDS4410AZ)
設計ノート
The SOIC-8 package is listed at 2.5 W (Ta) power dissipation, but that figure assumes ideal mounting. Estimated: at 5 A load with 20 mohm RDS(on), conduction loss is 0.5 W; with a typical SOIC-8 theta-JA of 100 C/W, junction rise is about 50 C over ambient - acceptable at 25 C ambient but marginal at 70 C. Provide at least 1 square inch of 2 oz copper connected to the drain pins, and verify RDS(on) at your actual gate-drive voltage because it rises at reduced VGS, increasing dissipation in a self-reinforcing loop.
Keep the gate loop short: route the gate trace directly from the driver with a 10 to 22 ohm series resistor placed close to pin 4, and include a 10k to 100k gate-to-source pull-down so the MOSFET stays off during controller reset or when the driver is high-impedance. Connect all four drain pins (5-8) and all three source pins (1-3) to generous copper; the multiple pins exist specifically to reduce lead resistance and inductance at 10 A. For switching applications, minimize the drain-source loop area with the freewheel diode or catch element placed within a few millimeters of the SOIC-8 body.
Do not exceed the 30 V drain-source rating: on unregulated 12 V adapters or inductive loads, transients can exceed the limit and cause avalanche failure - use a TVS or snubber if needed. Never drive the gate from a 3.3 V GPIO and assume datasheet RDS(on), since this logic-level part is specified near 4.5 V; at lower drive, on-resistance degrades substantially and may cause thermal runaway at high current. Also confirm substitute parts (e.g., AO4468) are gate-threshold-compatible before drop-in substitution in production.
コンプライアンス情報
Compliance data not present in provided web data; consult onsemi product page for the legacy Fairchild FDS4410A compliance certificates.
