FMMT717TA - 12V PNP 2.5A Low-Saturation BJT | Diodes Incorporated
部品番号: FMMT717TA ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.45 | $0.45 |
| 10 | $0.38 | $3.80 |
| 100 | $0.27 | $27.00 |
| 500 | $0.21 | $105.00 |
| 1,000 | $0.16 | $160.00 |
| 3,000 | $0.12 | $360.00 |
FMMT717TA 概要
A PNP bipolar junction transistor (BJT) is a three-terminal semiconductor device in which a p-doped emitter, n-doped base, and p-doped collector are arranged so that the device conducts when the base is pulled below the emitter potential. Low-saturation transistors are a specialized subcategory engineered to minimize VCE(sat) so that the device behaves like a near-ideal closed switch, reducing conduction losses in switching regulators, motor drivers, and high-side MOSFET gate drivers. The FMMT717 belongs to Diodes Incorporated's FMMT7xx SuperSOT family, which complements the NPN FMMT6xx series.
Key differentiating features include a very low equivalent on-resistance of 72 mΩ at full rated current, hFE characterized up to -10 A for high current gain hold-up across the operating range, and a complementary NPN type (FMMT617) for symmetric half-bridge designs. The SOT-23-3 footprint provides a compact PCB area while supporting 625 mW continuous dissipation when properly land-patterned onto adequate copper pour.
Typical applications include DC-DC converter synchronous rectification, MOSFET gate drivers for P-channel devices, power management load switches, battery chargers, motor control H-bridges, and low-voltage power management in industrial and consumer systems. The low VCE(sat) directly reduces conduction losses, which improves overall efficiency and thermal performance in switching topologies.
Designers should note that this part is a low-VCEO (12 V) device, making it suitable only for sub-12 V bus systems; for 20 V or 30 V applications, the higher-VCEO FMMT720 should be selected. The complementary NPN FMMT617 shares the same SOT-23-3 footprint and enables compact half-bridge and push-pull topologies without layout rework.
This page synthesizes distributor pricing, drop-in alternatives, application pairings, and practical design notes that extend beyond the manufacturer datasheet, supporting component selection, second-source qualification, and BOM risk reduction.
ドロップイン代替品: FMMT717TA — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
FMMT617TA
✅ ドロップイン📋 参考代替品（カタログ未掲載）
FMMT716TA
✅ ドロップイン📋 参考代替品（カタログ未掲載）
FMMT720TA
✅ ドロップイン📋 参考代替品（カタログ未掲載）
FMMT618TA
✅ ドロップイン📋 参考代替品（カタログ未掲載）
FMMT722TA
✅ ドロップイン📋 参考代替品（カタログ未掲載）
FMMT717TA 最大定格＆電気的特性
| トランジスタタイプ | PNP Bipolar (BJT) |
| パッケージ | SOT-23-3 |
| 実装タイプ | Surface Mount |
| Collector-Emitter Voltage (VCEO) Max | -12 V |
| Continuous Collector Current (IC) | -2.5 A |
| Peak Pulse Collector Current (ICM) | -10 A |
| Power Dissipation (Pd) Max | 625 mW |
| 遷移周波数（ft） | 110 MHz |
| DC Current Gain (hFE) Min @ IC=-100 mA, VCE=-2 V | 300 |
| VCE(sat) Typ @ IC=-100 mA | -17 mV |
| RCE(sat) @ IC=-2.5 A | 72 mΩ |
| 動作温度範囲 | -55 °C to +150 °C (junction) |
| Complementary NPN | FMMT617 |
| RoHS ステータス | Compliant |
| MSLレベル | 1 |
FMMT717TA ピン構成
| ピン 1 | Base — Control input; current into the base modulates collector-emitter conduction (per SOT-23-3 PNP standard) |
| ピン 2 | Emitter — Connected to the more positive potential (ground in common-emitter switching) |
| ピン 3 | Collector — Load-side output; current flows out of the collector in PNP operation |
主な用途
FMMT717TA の用途: 6 件s: Synchronous Rectification in Low-Voltage DC-DC Converters, P-Channel MOSFET Gate Driver, Battery Protection and Load Switch, USB Power Path and Load Management, Motor Driver H-Bridge High-Side Switch, Signal-Level Analog Switch and Level Shifter.
Synchronous Rectification in Low-Voltage DC-DC Converters
The FMMT717TA's -17 mV VCE(sat) at -100 mA and 72 mΩ RCE(sat) at -2.5 A make it an excellent low-side PNP synchronous rectifier for 5 V and 9 V buck converters. Placed in parallel with the main switching MOSFET on the low side, it drops far less voltage than a Schottky diode at moderate currents, raising converter efficiency by 2 to 4 percentage points. The -10 A peak pulse rating tolerates inductor ripple excursions, while 110 MHz fT supports fast switching transitions at 500 kHz+ switching frequencies typical of point-of-load regulators.
おすすめ
P-Channel MOSFET Gate Driver
The FMMT717TA is well-suited as a discrete gate driver for P-channel MOSFETs in load-switch and power-path ORing applications. Its -2.5 A continuous collector current can source/sink gate charge for most medium-power P-FETs (Qg under 50 nC), while hFE of 300 at -100 mA provides high input impedance so a logic-level signal from a microcontroller GPIO can drive it directly. The 110 MHz transition frequency enables sub-100 ns switching, which is critical for minimizing switching losses in hot-swap and battery-protection circuits.
おすすめ
Battery Protection and Load Switch
In single-cell Li-ion / Li-polymer battery protection circuits, the FMMT717TA acts as the high-side PNP disconnect switch. Its -12 V VCEO exceeds the 4.2 V maximum cell voltage with safe headroom, while -2.5 A continuous current handles discharge currents up to 2.5 A. The 72 mΩ RCE(sat) keeps conduction loss below 0.5 W at 2.5 A, allowing compact SOT-23-3 layouts without an external heatsink. hFE characterized up to -10 A ensures sufficient drive margin across the entire discharge curve.
おすすめ
USB Power Path and Load Management
USB Type-A downstream ports and OTG supplies commonly use PNP high-side switches to deliver 5 V at 500 mA or 900 mA. The FMMT717TA's low -17 mV saturation voltage at -100 mA keeps the dropout under 50 mV at 500 mA load, preserving USB voltage compliance (4.75 V minimum) from a 5 V rail. Its SOT-23-3 footprint and complementary FMMT617TA enable ultra-compact dual-switch (high-side PNP + low-side NPN) load-disconnect designs, replacing larger SSOP-8 load switch packages.
おすすめ
Motor Driver H-Bridge High-Side Switch
Small brushed DC motors (1 to 2 A) in consumer products and toys can use the FMMT717TA as the high-side PNP switch in a discrete H-bridge, paired with FMMT617TA as the low-side NPN. The 110 MHz fT supports PWM frequencies up to 50 kHz for smooth torque control, while the -10 A peak pulse rating handles motor inrush transients without secondary breakdown. The complementary NPN/PNP pair shares the same SOT-23-3 footprint, simplifying PCB layout versus using single-polarity pairs.
おすすめ
Signal-Level Analog Switch and Level Shifter
Because of its low VCE(sat) and high fT, the FMMT717TA doubles as a fast analog signal switch for sub-12 V audio or data lines. In logic-level shifters between 3.3 V microcontrollers and 5 V peripherals, the FMMT717TA in emitter-follower configuration shifts 0/3.3 V levels to 0/5 V with sub-microsecond propagation delay, suitable for SPI or I2C level translation in mixed-voltage designs. The 625 mW dissipation supports continuous 100 mA switching without thermal stress.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: FMMT717TA — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | FMMT617TA | FMMT716TA | FMMT720TA | FMMT618TA | FMMT722TA |
|---|---|---|---|---|---|---|
| Package | SOT-23-3 | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Transistor Polarity | PNP | NPN | PNP | PNP | NPN | PNP |
| VCEO Max | -12 V | +12 V | -12 V | -40 V | +40 V | -12 V |
| Continuous Collector Current | -2.5 A | +2.5 A | -2.5 A | -1.5 A | +2.5 A | -3 A |
| Power Dissipation Max | 625 mW | 625 mW | 625 mW | 625 mW | 625 mW | 625 mW |
| Complementary NPN | FMMT617 | FMMT717 (i.e. this part) | FMMT616 | FMMT618 | FMMT720 (i.e. mirror) | FMMT622 |
主な差別化要因
- Lowest VCE(sat) at sub-100 mA load in the FMMT7xx family （vs FMMT720TA)
- Available complementary NPN in the same SOT-23-3 footprint （vs FMMT618TA)
- Higher peak pulse current (-10 A) for transient handling （vs FMMT722TA)
設計ノート
Estimated: at continuous -2.5 A and VCE(sat) of -180 mV (using RCE(sat) of 72 mΩ), conduction dissipation is approximately 0.45 W. The SOT-23-3 thermal resistance (theta_JA) is typically 357 °C/W on a minimum JEDEC 1-square-inch copper pour, which gives a junction temperature rise of ~160 °C above ambient at 0.45 W. To stay within the 150 °C junction limit at high ambient temperatures, derate the device by limiting average current to 1.5 A or upgrade to a 2 oz copper pour. Always measure in-system under worst-case load.
SOT-23-3 thermal performance depends strongly on copper pour area beneath and around the package. Use at least 1 square inch of 2 oz copper on both top and bottom layers for the device's thermal pad and exposed leads (Pin 3 / collector tab) to achieve the rated 625 mW dissipation. Place input/output traces short and wide to minimize parasitic inductance, which can cause ringing at fast switching edges and degrade the 110 MHz fT advantage.
Do not apply VCEO above -12 V to the FMMT717TA — the device will break down into secondary breakdown. For higher bus voltages (12 V nominal, 24 V industrial), select the FMMT720TA (-40 V VCEO). Also be aware of SOT-23-3 pinout convention variations across manufacturers: Diodes Incorporated uses Base-Emitter-Collector (B-E-C) for the PNP FMMT717TA, while some competitors use B-C-E; always check the manufacturer's specific datasheet before PCB layout to avoid mirrored pinout errors.
For switching applications above 100 kHz, add a base-emitter resistor (typically 1 kΩ to 10 kΩ) to ensure fast turn-off and prevent the PNP from lingering in the active region during transitions. The high 110 MHz fT makes the FMMT717TA susceptible to stray base pickup that can cause partial turn-on — keep base traces short and shield them from the switching collector trace. For sub-12 V high-frequency switching regulators, the FMMT617TA NPN complement shares the same fT and pairs cleanly for push-pull drive.
コンプライアンス情報
Per the Diodes Incorporated product page, the FMMT717TA is Totally Lead-Free and Fully RoHS Compliant (halogen-free per PartGenie). MSL Level 1. AEC-Q100 qualification is not listed; the FMMT717TA is not intended for automotive AEC-Q100 applications.
