IKW50N65H5FKSA1 - 650V 50A IGBT Single | Infineon TO-247
部品番号: IKW50N65H5FKSA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $8.37 | $8.37 |
| 10 | $7.65 | $76.50 |
| 100 | $6.55 | $655.00 |
| 240 | $6.1 | $1,464.00 |
| 1,000 | $5.45 | $5,450.00 |
IKW50N65H5FKSA1 概要
An IGBT (Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the high input impedance of a MOSFET gate with the low conduction losses of a bipolar transistor, sitting in the power-semiconductor hierarchy between MOSFETs (lower power, faster) and thyristors (higher current, slower). The IKW50N65H5FKSA1 targets hard-switched PFC, inverter, and welding-converter stages where 650 V breakdown voltage and 50 A nominal current define the typical 5-15 kW power-class envelope.
Key features include a collector-emitter saturation voltage VCE(sat) of 1.65 V at IC = 50 A (per the LCSC listing and FindIC summary), a built-in anti-parallel diode for half-bridge and full-bridge use, and low switching losses suitable for 20-50 kHz hard-switched converters. The trench-gate TRENCHSTOP 5 cell technology reduces conduction losses versus planar NPT predecessors, while the co-packaged diode is optimized for low Qrr and soft recovery to limit reverse-recovery losses in bridge configurations.
Typical applications span solar inverters, industrial motor controllers, UPS systems, induction heating, and welding converters. The wide 650 V rating provides adequate derating margin for 400 V rectified-mains and PFC boost stages, while the 50 A continuous current supports three-phase motor drives up to roughly 15 kW without paralleling. The TO-247 package offers low thermal resistance and screw-mount compatibility for heatsink attachment.
Design with VGE = 15 V for full rated current and use a gate resistor of 10-47 ohm to control di/dt. Ensure junction temperature stays below 175 C with adequate heatsinking. This page synthesizes distributor pricing, TO-247 drop-in alternatives, and practical thermal design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: IKW50N65H5FKSA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IKW50N65H5FKSA1 （同一形状・フットプリント） — 相違点: RoHS Status.
クイック比較ツール — 並列比較する代替部品を選択:
IKQ50N65EH5
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IKW50N65ES5XKSA1
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STGW60H65DFB
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IXYH40N65C3H1
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IRGP6650DPBF
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IKW50N65H5FKSA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Product Type | IGBT Single Transistor |
| Technology | TRENCHSTOP 5 (H5 high-speed family) |
| Collector-Emitter Voltage (VCE) | 650 V |
| Continuous Collector Current (IC, TC=25C) | 80 A |
| Continuous Collector Current (IC, TC=100C) | 50 A |
| Maximum Power Dissipation (Ptot) | 305 W |
| コレクタ-エミッタ間飽和電圧（Vce(sat)） | 1.65 V at IC = 50 A |
| Gate-Emitter Voltage (VGE) max | 20 V (typical rating) |
| Built-in Diode | Yes, anti-parallel co-packaged diode |
| Operating Junction Temperature (Tj) | -40 C to +175 C (typical IGBT max) |
| パッケージ | TO-247 (PG-TO247-3), 3 pins |
| 実装タイプ | Through Hole |
| Packing | Tube (240 pcs/tube per Infineon product page) |
| RoHS ステータス | Compliant (per Infineon) |
| ライフサイクル状態 | Active (per Infineon product page) |
IKW50N65H5FKSA1 ピン構成
| ピン 1 | Gate — Gate control input; standard 15V drive |
| ピン 2 | Collector — Power collector (also connected to metal tab) |
| ピン 3 | Emitter — Power emitter return |
安全動作領域 (DC, VGE = 15V, TC = 25C)
主な用途
IKW50N65H5FKSA1 の用途: 6 件s: Solar String Inverter PFC Boost Stage, Industrial Variable-Frequency Motor Drive, Uninterruptible Power Supply (UPS) Inverter, Induction Heating Resonant Converter, Welding Converter Power Stage, EV Onboard Charger PFC Stage (Industrial/Stationary).
Solar String Inverter PFC Boost Stage
The IKW50N65H5FKSA1 fits solar string inverter PFC boost stages where 650 V VCE rating handles 400 V rectified-mains bus with ample switching-transient margin. Its 50 A continuous current at TC = 100 C supports 10-15 kW single-channel inverters, while the TRENCHSTOP 5 H5 family delivers low VCE(sat) of 1.65 V at 50 A for high-efficiency hard-switched boost operation. The co-packaged anti-parallel diode eliminates the need for an external boost rectifier, reducing BOM cost and PCB area. Engineers typically pair this IGBT with a UCC21750 gate driver and run at 16-32 kHz switching frequency to balance magnetics size against switching loss.
おすすめ
Industrial Variable-Frequency Motor Drive
In three-phase 400 V industrial VFDs up to 15 kW, the IKW50N65H5FKSA1 serves as the inverter-leg IGBT with its 650 V VCE providing sufficient headroom above the 565 V DC-bus peak. The 80 A IC at TC = 25 C and 50 A at TC = 100 C support continuous three-phase output without paralleling devices, while the co-packaged diode handles motor-regeneration free-wheeling current. Its 305 W Ptot budget and TO-247 thermal performance simplify heatsink selection, and the 20 V VGE max rating is compatible with standard 15 V gate-drive supplies from drivers like the IR21064STRPBF.
おすすめ
Uninterruptible Power Supply (UPS) Inverter
Double-conversion UPS systems in the 5-15 kW range leverage the IKW50N65H5FKSA1 in the inverter bridge that converts the 384 V DC bus to 230 V AC mains output. The 650 V VCE rating derates comfortably to 400 V bus operation, and the 50 A continuous current supports 230 V x 30 A continuous three-phase or single-phase-with-neutral inverter legs. The H5 family tuning reduces switching losses in hard-switched IGBT bridges at the typical 16-20 kHz UPS PWM frequency. The built-in anti-parallel diode simplifies the bridge layout and is qualified for the continuous free-wheeling currents encountered during overload transients.
おすすめ
Induction Heating Resonant Converter
Induction-heating cooktops and industrial IH heaters operating at 20-50 kHz benefit from the IKW50N65H5FKSA1's hard-switching-optimized TRENCHSTOP 5 H5 cell design, which minimizes turn-off losses during the resonant-commutation cycles. The 650 V VCE rating fits 400 V rectified-mains designs, and 50 A continuous current supports heating coils in the 5-10 kW range. The TO-247 package's low thermal resistance theta_JC enables compact heatsink integration, while the gate-charge characteristic allows straightforward zero-voltage-switching (ZVS) implementation with appropriately tuned resonant tanks.
おすすめ
Welding Converter Power Stage
Welding power sources require rugged switches that handle high peak currents and short-circuit conditions, where the IKW50N65H5FKSA1's 650 V VCE and 50 A continuous rating fit primary-secondary full-bridge and half-bridge topologies. The IGBT's short-circuit withstand time (typically 5-10 us for H5 family) supports the arc-strike and arc-stability transients characteristic of MMA/TIG welding. Its low VCE(sat) of 1.65 V reduces conduction losses during the high-current welding arc, improving efficiency and reducing heatsink requirements in portable inverter welders up to 200 A output.
おすすめ
EV Onboard Charger PFC Stage (Industrial/Stationary)
Although not AEC-Q100 qualified, the IKW50N65H5FKSA1's 650 V VCE and 50 A continuous current suit stationary EV charging station AC-DC PFC boost stages at 11-22 kW. The H5 family delivers the hard-switching performance required for totem-pole or bridgeless PFC topologies operating at 50-100 kHz, with the co-packaged diode providing bidirectional current paths in bridgeless designs. Industrial charging cabinets benefit from the TO-247's screw-mount heatsink compatibility and the Infineon H5 family reputation for reliability in continuous-duty power-conversion service.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IKW50N65H5FKSA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IKQ50N65EH5 | IKW50N65ES5XKSA1 | STGW60H65DFB | IXYH40N65C3H1 | IRGP6650DPBF |
|---|---|---|---|---|---|---|
| Package | TO-247-3 (PG-TO247-3) | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | IXYS | Infineon Technologies |
| VCE Breakdown (V) | 650 | 650 | 650 | 650 | 650 | 600 |
| Continuous IC at TC=100C (A) | 50 | 50 | 50 | 60 | 40 | 50 |
| Switching Optimization | Hard-switching (H5) | Soft-switching (EH5) | Easy family (resonant) | Hard-switching | Hard-switching | Hard-switching (Gen7 Co-Pack) |
| Built-in Diode | Yes (co-packaged) | Yes (co-packaged) | Yes (co-packaged) | Yes (co-packaged) | Yes (co-packaged) | Yes (co-packaged) |
主な差別化要因
- TRENCHSTOP 5 H5 family - hard-switching optimized （vs IKW50N65ES5XKSA1)
- 50A continuous current at TC=100C - high headroom （vs IXYH40N65C3H1)
- Lower VCE(sat) vs comparable 650V TO-247 IGBTs （vs IRGP6650DPBF)
設計ノート
Estimated: at IC = 50 A, VCE(sat) = 1.65 V, and DC conduction (worst case), the IKW50N65H5FKSA1 dissipates roughly 82.5 W; at 30 A continuous conduction the dissipation is closer to 49.5 W. With theta_JC around 0.49 C/W for TO-247, the junction-to-case temperature rise is approximately 82.5 W x 0.49 C/W = 40 C above case. Always size the heatsink to keep Tj below 150 C derated (175 C absolute max) under worst-case ambient and switching-loss conditions.
The TO-247 metal tab is internally connected to the collector, so the heatsink is at collector potential unless an insulated thermal interface pad (sil-pad or Bergquist) is used. For half-bridge and full-bridge layouts, route the emitter-sense connection back to pin 3 rather than the tab to avoid including tab resistance in the gate-drive return path; this prevents high di/dt induced VGE spikes from causing shoot-through or gate-oxide stress.
Keep the gate-drive loop area as small as possible: place the gate resistor (10-47 ohm) and gate-drive supply decoupling capacitor within 1-2 cm of the gate and emitter pins. The high di/dt during turn-on (typically 1000-3000 A/us for H5 family) creates significant L x di/dt voltage transients; minimize parasitic loop inductance in the power-commutation loop (collector-emitter) with wide short PCB traces or bus bars to limit VCE overshoot below the 650 V rating.
Do not exceed VGE = +/-20 V on the gate - apply -5 to -15 V negative gate bias during off-state to prevent parasitic turn-on from Miller current in bridge configurations. Ensure the co-packaged diode's reverse-recovery current rating is not exceeded; verify IGBT turn-on di/dt is limited by gate resistance to stay within the diode's safe operating area (SOA). Last, confirm DC-link voltage stays below 80% of 650 V (520 V) under worst-case transient conditions for reliable long-term operation.
コンプライアンス情報
RoHS compliant per Infineon product page; not AEC-Q100 qualified - this part is intended for industrial-grade use. Conflict-minerals statement available from Infineon. Halogen-free status not explicitly stated in available data.
