IRF7480MTRPBF - 40V 217A N-Channel StrongIRFET MOSFET | Infineon
部品番号: IRF7480MTRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.45 | $3.45 |
| 10 | $2.98 | $29.80 |
| 100 | $2.42 | $242.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.78 | $1,780.00 |
| 4,800 | $1.55 | $7,440.00 |
IRF7480MTRPBF 概要
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert or regulate electrical energy. Within the power-semiconductor taxonomy, MOSFETs belong to the discrete transistor family, which in turn is a subset of discrete semiconductors. N-channel enhancement-mode MOSFETs like the IRF7480MTRPBF are the workhorse of low-voltage, high-current switching applications because their majority-carrier conduction mechanism delivers fast switching and low RDS(on), unlike IGBTs which are preferred above ~600 V. StrongIRFET is Infineon's brand name for MOSFETs targeting industrial motor drive, battery protection, and synchronous rectification, competing with OptiMOS and similar platforms from other vendors.
Key differentiating specifications of the IRF7480MTRPBF include: 40 V drain-source breakdown (VDS), 217 A continuous drain current at 25 C case temperature, 1.2 mOhm maximum on-resistance at VGS = 10 V, and a DirectFET ME package that exposes the die on both sides of the package for top-side cooling. The DirectFET metal-can-style LGA construction eliminates traditional wire bonds, reducing package inductance and improving thermal performance versus standard SO-8 or DPAK equivalents. Gate threshold voltage is typically in the 1.8 V to 2.5 V range, with full enhancement at 10 V drive.
Typical applications include brushed and BLDC motor drive, synchronous rectification in isolated DC-DC converters, battery protection circuits, half-bridge and full-bridge topologies, OR-ing and redundant power switches, and resonant-mode power supplies such as LLC converters. The combination of very low RDS(on) and a thermally enhanced package makes it well suited to high-current, high-efficiency designs where PCB copper area is limited.
When designing with this part, observe the safe operating area (SOA) carefully at high VDS and high duty cycles, and use a gate driver capable of sourcing/sinking several amperes to achieve the nanosecond-class switching times the DirectFET package enables. Because the package has an exposed metal can on both sides, the PCB land pattern is unique to DirectFET and is not interchangeable with D2PAK or DPAK layouts.
ドロップイン代替品: IRF7480MTRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRF7480MTRPBF （同一形状・フットプリント） — 相違点: MSL Level, Mounting Type, Operating Junction Temperature, Automotive Qualification, Channel Type.
クイック比較ツール — 並列比較する代替部品を選択:
IRF7480MTR1PBF
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IRF7480MTRPBF-Q1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
BSC019N04NS5ATMA1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IAUC60N04S6L030HATMA1
✅ ドロップイン✓ 在庫あり
$0.94 / 個
データシートを見る →IAUCN04S7N015GATMA1
✅ ドロップイン✓ 在庫あり
$2.21 / 個
データシートを見る →IRF7480MTRPBF 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Part Number | IRF7480MTRPBF |
| Technology | StrongIRFET (N-Channel MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 217 A |
| Maximum On-Resistance RDS(on) max at VGS=10V | 1.2 mOhm |
| Gate Threshold Voltage (VGS(th)) | 1.8 V to 2.5 V (typical range, datasheet) |
| Power Dissipation (PD) at Tc=25C | 96 W |
| 動作接合温度 | -55 C to +175 C |
| Package Type | DirectFET Isometric ME (surface-mount LGA-style) |
| 実装タイプ | Surface Mount |
| MSLレベル | 1 |
| RoHS ステータス | Compliant |
| Standard Reel Quantity | 4800 pcs (ordered as IRF7480MTRPBF); 1000 pcs on 7-inch reel is IRF7480MTR1PBF |
| Series | StrongIRFET |
| Channel Type | N-Channel Enhancement Mode |
IRF7480MTRPBF ピン構成
| ピン 1 | Source (Tab 1) — Source connection, large thermal/electrical tab |
| ピン 2 | Source (Tab 2) — Source connection, large thermal/electrical tab |
| ピン 3 | Source (Tab 3) — Source connection, large thermal/electrical tab |
| ピン 4 | Gate — Gate drive input |
| ピン 5 | Source Sense — Kelvin source for gate-drive return |
| ピン 6 | Drain — Drain connection, bottom-side pad |
| ピン 7 | Drain (top can) — Drain on top metal can (electrically tied to bottom drain) |
安全動作領域 (DC, Tc=25C)
主な用途
IRF7480MTRPBF の用途: 6 件s: BLDC Motor Drive (24 V nominal), Synchronous Rectification in 24-36 V DC-DC Converters, Battery Protection and OR-ing Switches, Half-Bridge and Full-Bridge Power Topologies, Resonant Mode Power Supplies (LLC, Phase-Shifted Full-Bridge), DC/AC Inverters for Solar and UPS.
BLDC Motor Drive (24 V nominal)
The IRF7480MTRPBF is well matched to 24 V BLDC motor drive half-bridges where high peak current and low conduction loss are required. Its 1.2 mOhm RDS(on) at 10 V VGS keeps I^2R losses below 5 W at 65 A continuous phase current, while the 40 V VDS rating provides 16 V of headroom above a 24 V bus for inductive switching transients. The DirectFET ME package exposes the die on top, allowing a thermal interface material and heatsink for sustained high-current operation.
おすすめ
Synchronous Rectification in 24-36 V DC-DC Converters
In isolated 24 V or 36 V nominal DC-DC converters, the IRF7480MTRPBF serves as a low-side synchronous rectifier to replace Schottky diodes. The 1.2 mOhm RDS(on) reduces rectifier loss from ~3 W (Schottky) to under 1 W at 30 A, and the 40 V VDS rating tolerates reflected voltage spikes on the secondary. Use a dedicated synchronous-rectifier controller to drive the gate with proper dead-time and avoid cross-conduction. The DirectFET ME footprint requires careful PCB thermal copper design.
おすすめ
Battery Protection and OR-ing Switches
The IRF7480MTRPBF suits high-current battery protection and OR-ing applications where low forward drop and high peak current are required. At 100 A continuous discharge, the 1.2 mOhm RDS(on) drops only 120 mV, reducing heat versus a Schottky-based OR-ing diode. The 40 V VDS rating covers 12 V lead-acid and 24 V LiFePO4 battery stacks with margin. Fast body-diode recovery supports hot-swap and reverse-polarity protection topologies in redundant power systems.
おすすめ
Half-Bridge and Full-Bridge Power Topologies
In half-bridge and full-bridge converter topologies such as telecom rectifiers, the IRF7480MTRPBF provides the high-current switching element with 217 A continuous rating per device. The 40 V VDS handles 24 V industrial bus rails plus transient margin, and the DirectFET ME package's low package inductance reduces ringing and overshoot at high di/dt. Pair with the IR2110 or IR2109 half-bridge gate driver for level-shifted high-side drive and adaptive dead-time control.
おすすめ
Resonant Mode Power Supplies (LLC, Phase-Shifted Full-Bridge)
LLC and phase-shifted full-bridge converters benefit from the IRF7480MTRPBF's low RDS(on) and DirectFET ME thermal performance. The 40 V VDS is well matched to 24 V and 36 V resonant tanks, and the very low package inductance minimizes dv/dt-induced ringing at zero-voltage-switching transitions. Two IRF7480MTRPBF devices per leg (paralleled if needed) handle multi-kilowatt power levels with 1.2 mOhm RDS(on) keeping conduction loss below 3 percent at full load.
おすすめ
DC/AC Inverters for Solar and UPS
Low-voltage DC/AC inverters for solar micro-inverters and UPS systems use the IRF7480MTRPBF in the H-bridge output stage at 24 V or 48 V bus. The 217 A continuous rating supports multi-kW inverter legs, while the 40 V VDS gives margin against reflected inductive spikes on long cable runs. The DirectFET ME package enables top-side cooling, which is critical in sealed inverter enclosures with no airflow. Gate-drive at 10 V ensures full enhancement into the 1.2 mOhm RDS(on) region.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRF7480MTRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRF7480MTR1PBF | BSC019N04NS5ATMA1 | IAUC60N04S6L030HATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | DirectFET ME | DirectFET ME (same) | DirectFET ME (same) | DirectFET-class (same) | DirectFET-class (same) |
| VDS max | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max at VGS=10V | 1.2 mOhm | 1.2 mOhm | 1.9 mOhm | 3.0 mOhm | 1.5 mOhm |
| Technology Family | StrongIRFET | StrongIRFET | OptiMOS 5 | OptiMOS 5 | StrongIRFET/OptiMOS |
| Automotive Qualified | No (industrial) | No | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
主な差別化要因
- Lowest RDS(on) per square centimeter in the DirectFET ME class （vs BSC019N04NS5ATMA1)
- Highest continuous drain current rating in the StrongIRFET 40 V family （vs IAUC60N04S6L030HATMA1)
- DirectFET ME package enables top-side cooling （vs D2PAK package parts like IRFB7545PBF)
設計ノート
The DirectFET ME package exposes the silicon die on the top side via a metal can, which can be thermally coupled to an external heatsink with thermal interface material. Estimated: at 100 A continuous current with 1.2 mOhm RDS(on), the part dissipates 12 W; without a heatsink on the top can, the junction-to-ambient thermal resistance of approximately 50 C/W produces a 600 C junction rise above ambient, which exceeds the 175 C maximum. A heatsink or substantial PCB copper on the drain pad is required for sustained high-current operation.
The DirectFET ME land pattern is unique and requires a multi-pad PCB footprint with separate source, gate, and drain copper areas as defined in the Infineon application note. Source pads must be generously connected with wide copper pours to minimize parasitic inductance that causes voltage transients during switching. Gate-drive traces should be kept short and routed over a continuous ground plane to prevent gate-oscillation; add a 10 ohm gate resistor close to the IC to dampen ringing.
Because the DirectFET package is metal-can LGA, solder paste deposition and reflow profile must follow the Infineon recommended profile (peak temperature 260 C for no-clean paste). Insufficient paste volume on the drain pad causes high thermal resistance and dry joints; excessive paste causes the part to float and short the gate to source. Use a stencil aperture ratio of approximately 0.7:1 on the large drain pad and 1:1 on the small gate pad per the Infineon soldering guidelines.
Do not attempt to substitute a D2PAK or DPAK MOSFET on the same PCB footprint; the DirectFET ME land pattern is completely different and a D2PAK will not solder properly. Also avoid gate drive below 8 V; the 1.2 mOhm RDS(on) spec is at 10 V VGS, and at 6 V VGS the on-resistance may be 2x to 3x higher, dramatically increasing conduction loss. Finally, do not exceed 40 V VDS even transiently; avalanche breakdown above 40 V can permanently damage the die.
コンプライアンス情報
RoHS compliant per DigiKey product listing and PartGenie. MSL 1 rated. AEC-Q100 not applicable to the standard -TRPBF suffix; the -Q1 suffix variant is AEC-Q101 automotive qualified. REACH and halogen status not specified in the verified web data; set to unknown.
