IRGP50B60PD1-EP - 600V 75A WARP2 IGBT with Ultrafast Diode | Infineon
部品番号: IRGP50B60PD1-EP ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $6.5 | $6.50 |
| 10 | $5.85 | $58.50 |
| 100 | $5.2 | $520.00 |
| 500 | $4.65 | $2,325.00 |
| 1,000 | $4.1 | $4,100.00 |
IRGP50B60PD1-EP 概要
An IGBT is a minority-carrier power semiconductor that merges the high-input-impedance gate drive of a MOSFET with the low conduction loss of a bipolar transistor. Hybrid IGBT+diode co-packs such as the IRGP50B60PD1-EP occupy the power-management tier between discrete MOSFETs and high-voltage thyristors, sitting at the core of AC-DC and DC-DC conversion stages in telecom rectifiers, server front-ends, PFC boost stages, and ZVS/LLC resonant converters. NPT (Non-Punch-Through) wafer technology provides a robust trade-off between switching loss and short-circuit ruggedness.
Key features include NPT technology, a VCE(on) of 2.0V (typical at 33A), co-packaged ultrafast soft-recovery diode for low EMI, low RCE(on) of 61 mOhm (typical), 150 kHz switching capability per the WARP2 designation, 390W power dissipation at TC = 25C, and a maximum junction temperature of 150C. The TO-247AD package supports isolated or non-isolated mounting and is compatible with standard heatsink clips.
Architecture is an NPT (Non-Punch-Through) IGBT die monolithically integrated with a copackaged ultrafast soft-recovery rectifier that conducts during inductive freewheeling intervals, suppressing reverse-recovery spike voltages that otherwise couple across the switching node. Compared with trench-gate PT designs, NPT offers a wider safe-operating area and better thermal cycling endurance.
Typical applications include telecom and server SMPS front-end PFC stages, ZVS/LLC resonant converter half-bridges, industrial uninterruptible power supplies (UPS), and high-power consumer SMPS. Designers choose this part where 600V breakdown margin and 33-75A continuous current are needed in a single TO-247 footprint.
Design trade-off: the 2.0V typical VCE(on) at 33A results in approximately 66W of conduction loss at full load, so a properly-sized heatsink with thermal interface material is required to keep the junction below 150C and within the RthJC rating.
This page synthesizes distributor pricing, drop-in equivalents (including the AUIRGP50B60PD1E automotive-grade variant), and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: IRGP50B60PD1-EP — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
IRGP50B60PD1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
AUIRGP50B60PD1E
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRGP50B60PD1PBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRGP50B60PD
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IGW50N60H3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRGP50B60PD1-EP 最大定格＆電気的特性
| Manufacturer | Infineon (formerly International Rectifier) |
| Series | WARP2 |
| トランジスタタイプ | IGBT with co-packaged ultrafast soft-recovery diode |
| Technology | NPT (Non-Punch-Through) |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC at TC=25C) | 75 A |
| Power Dissipation (PD at TC=25C) | 390 W |
| VCE(on) typical (at IC=33A, VGE=15V) | 2.00 V |
| RCE(on) typical | 61 mOhm |
| Switching Frequency Range | Up to 150 kHz |
| パッケージ | TO-247AD (3-pin + tab, through-hole) |
| Gate Drive Voltage (VGE recommended) | 15 V |
| 動作接合温度 | -55C to +150C |
| 実装タイプ | Through Hole |
| Lead-Free / RoHS | Yes (EP suffix indicates lead-free) |
IRGP50B60PD1-EP ピン構成
| ピン 1 | Gate — Gate control input; driven by 15V gate driver |
| ピン 2 | Collector — Main current terminal (also bonded to metal tab) |
| ピン 3 | Emitter — Return path for gate drive and main current |
安全動作領域 (DC) at TC = 25C
主な用途
IRGP50B60PD1-EP の用途: 6 件s: Telecom and Server SMPS Front-End PFC, ZVS / LLC Resonant Converter Half-Bridge, Industrial Uninterruptible Power Supplies (UPS), Welding and Induction-Heating Power Converters, Solar String Inverters and Renewable DC-DC, High-Power Consumer SMPS and Audio Amplifiers.
Telecom and Server SMPS Front-End PFC
The IRGP50B60PD1-EP is a textbook choice for boost PFC stages in 1-3 kW telecom and server SMPS front-ends. Its 600V VCES provides comfortable margin above the 390-410V rectified 230V AC bus, and its 75A continuous IC rating at TC=25C supports full-load currents up to 3 kW at universal mains. The co-packaged ultrafast soft-recovery diode eliminates the need for an external antiparallel rectifier, reducing magnetic reverse-recovery stress. The WARP2 family is characterized for CCM PFC switching frequencies of 40-100 kHz, balancing switching loss against inductor size. Compared with a discrete MOSFET, the IGBT typically halves conduction loss in the boost switch during CCM operation.
おすすめ
ZVS / LLC Resonant Converter Half-Bridge
LLC and ZVS half-bridge converters running at 100-150 kHz leverage the IRGP50B60PD1-EP's WARP2 switching characteristics and co-packaged ultrafast diode. Below resonance, the integral diode clamps the transformer's parasitic inductance without overshoot, while above resonance the IGBT's VCE(on) of 2.0V typical provides turn-off loss well below the silicon limit. The NPT die technology yields a wide Reverse Bias Safe Operating Area suitable for the body-diode conduction that occurs during LLC startup transients. Two IRGP50B60PD1-EP devices in a half-bridge easily cover a 1.5 kW 400V-to-48V converter in server and telecom applications.
おすすめ
Industrial Uninterruptible Power Supplies (UPS)
Industrial UPS inverter and battery-converter stacks use the IRGP50B60PD1-EP for its 390W PD rating and 150C junction temperature margin. In the inverter stage the IGBT switches the 384V DC bus into a low-frequency transformer at 50/60 Hz, while the bidirectional battery converter operates at 20-30 kHz. The TO-247AD through-hole package permits clip-mount heatsinking in dense UPS modules rated 2-5 kVA, and the 75A IC comfortably handles 3 kW continuous battery-charging current with parallel redundancy if needed. Choosing this part reduces BOM count versus discrete MOSFET+diode half-bridges.
おすすめ
Welding and Induction-Heating Power Converters
The IRGP50B60PD1-EP is widely deployed in mid-power induction-heating and welding inverters operating in the 25-150 kHz range, where its 600V breakdown margin and 75A continuous current sustain the high peak currents typical of resonant tank oscillation. Two devices in a half-bridge can deliver 5-10 kW to a tank circuit for surface-hardening or plastic-welding applications. The co-packaged soft-recovery diode is critical here because the resonant tank forces body-diode conduction during dead-time; the WARP2 diode is designed for this duty. The TO-247AD package is industry-standard for the clip-and-fan-cooled modules used in these appliances.
おすすめ
Solar String Inverters and Renewable DC-DC
String inverters and solar boost stages rated 600V DC bus can use the IRGP50B60PD1-EP for the boost IGBT in a 1-3 kW DC-DC or for the DC-AC bridge legs. Its 600V VCES handles the open-circuit PV string voltage with margin, while the 75A continuous rating covers 3 kW of continuous power at typical 80-90% duty cycle. The co-packaged diode handles freewheeling currents during MPPT transients. Designers appreciate the WARP2-family reputation for thermal endurance in outdoor enclosures with elevated ambient temperatures and limited convection.
おすすめ
High-Power Consumer SMPS and Audio Amplifiers
High-power consumer SMPS - particularly subwoofer amplifiers and pro-audio Class-I switching supplies - use the IRGP50B60PD1-EP in their PFC and main converter stages. The 390W dissipation rating and TO-247 package with a clip heatsink keep the supply operating cool in console chassis with restricted airflow. The co-packaged soft-recovery diode reduces conducted and radiated EMI, an important consideration for audio equipment where SMPS noise couples back into the signal path. The 600V rating supports universal-mains input (85-265V AC) without further protection.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRGP50B60PD1-EP — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRGP50B60PD1 | AUIRGP50B60PD1E | IRGP50B60PD1PBF | IGW50N60H3 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-247AD | TO-247AD | TO-247AD | TO-247AD | TO-247 |
| VCES (V) | 600 | 600 | 600 | 600 | 600 |
| IC continuous at TC=25C (A) | 75 | 75 | 75 | 75 | 50 |
| Power Dissipation (W) | 390 | 390 | 390 | 390 | 306 |
| VCE(on) typical at IC=33A (V) | 2.00 | 2.00 | 2.05 | 2.00 | 1.95 |
| Switching Frequency Range | Up to 150 kHz | Up to 150 kHz | Up to 150 kHz | Up to 150 kHz | Up to 100 kHz |
| Automotive Grade | No (industrial) | No (industrial) | Yes (AEC-Q101) | No (industrial) | No (industrial) |
主な差別化要因
- Co-packaged ultrafast soft-recovery diode specifically matched to the WARP2 die （vs Discrete IGBT + external ultrafast diode (e.g., 75A MOSFET + 75A UF diode))
- WARP2 family is the only IRGP50B60PD1-EP variant matched for 150 kHz SMPS （vs IGW50N60H3 (Infineon HighSpeed 3 family))
- AEC-Q101 automotive-qualified variant available with the same die （vs IRGP50B60PD1-EP (non-automotive))
設計ノート
Estimated: at the maximum continuous IC of 75A and VCE(on) of approximately 2.5V at that current, dissipation reaches ~187W. The TO-247AD has a junction-to-case thermal resistance on the order of 0.4-0.5 C/W; the heatsink-plus-TIM chain must therefore stay below 0.3 C/W to keep the junction under 150C. Use a high-performance thermal interface material (5 W/mK or better) and verify case temperature under worst-case load with a thermocouple on the tab. Forced-air cooling at 1-2 m/s is recommended above 100W dissipation.
Route the gate loop (gate driver output -> gate resistor -> gate-emitter -> driver return) with a small loop area to minimize parasitic inductance that causes gate ringing and dv/dt-induced turn-on. Place a 10-100 ohm gate resistor and a 1-10 kOhm gate-emitter pull-down (with optional anti-parallel diode clamp) directly at the gate pin to protect against dv/dt-induced false trigger. The collector tab should be mechanically clamped to the heatsink before any electrical connection is made.
Three pitfalls commonly cause field failures in WARP2 IGBT designs: (1) omitting the gate-emitter pull-down resistor, which lets the gate float during driver power-loss and turns on the IGBT through Miller coupling; (2) using the 75A continuous rating at TC=25C in a 100C ambient without proper thermal derating - the actual usable IC at 100C is roughly 38A; (3) confusing the co-packaged diode with a discrete rectifier during board rework - replacing the TO-247AD with a discrete MOSFET+diode requires matching the diode's reverse-recovery softness to avoid EMI spikes.
Keep the switching node trace area as small as practical to minimize radiated EMI. Use a DC-link snubber of 0.1-1uF film capacitor in parallel with an RC snubber (10-47 ohm + 1-10 nF) across the IGBT's collector-emitter to clamp turn-off voltage spikes that couple back through the transformer's leakage inductance. For ZVS/LLC topologies, body-diode reverse recovery of the co-packaged diode MUST be characterized in the datasheet - the WARP2 family is specified for this duty, but external diodes rarely match.
コンプライアンス情報
EP suffix indicates lead-free / RoHS compliant per legacy IR convention. Automotive-grade variant (AUIRGP50B60PD1E) is the AEC-Q101 qualified option; the EP suffix is industrial-grade. REACH, halogen-free, and conflict-minerals status were not stated in the verified distributor/Mouser pages, so they remain unknown.
