IRLZ44ZPBF - 55V 51A Logic-Level HEXFET MOSFET | Infineon
部品番号: IRLZ44ZPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.1 | $2.10 |
| 10 | $1.89 | $18.90 |
| 100 | $1.62 | $162.00 |
| 500 | $1.38 | $690.00 |
| 1,000 | $1.15 | $1,150.00 |
IRLZ44ZPBF 概要
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically an oxide layer) to modulate current flow between the drain and source terminals. N-channel MOSFETs like the IRLZ44ZPBF conduct when a positive gate-to-source voltage is applied, and are favored in low-side switching topologies because of their lower on-resistance per unit area compared to P-channel equivalents. The IRLZ44ZPBF belongs to the logic-level HEXFET family, optimized for direct drive from 5V or 3.3V microcontrollers without requiring a dedicated gate driver.
Key features include 175C maximum junction operating temperature, fast switching speed, improved repetitive avalanche rating, and JEDEC-qualified logic-level gate drive capable of operation at VGS as low as 4.5V. The TO-220AB package provides a thermal resistance of 62 C/W junction-to-case and is widely accepted in industrial and automotive through-hole designs.
The IRLZ44ZPBF utilizes International Rectifier's HEXFET cell technology with a vertical DMOS structure, providing low on-resistance, high current handling, and robust avalanche energy capability. The logic-level threshold allows direct PWM drive from 5V logic, eliminating the need for gate driver ICs in many applications and reducing BOM cost and PCB complexity.
Typical applications include automotive fuel injection control, DC motor drives, solenoid drivers, low-voltage power conversion, and high-current switching in industrial control. The 175C junction rating and automotive-grade qualification make it particularly suitable for under-hood automotive electronics and other harsh-environment designs.
When designing with this MOSFET, ensure gate drive voltage reaches at least 10V for full RDS(on) performance. At 4.5V drive, on-resistance approximately doubles, increasing conduction losses. Add a gate resistor (10-100 ohm) to control ringing and a TVS or zener clamp for inductive load protection.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, enabling faster part selection and BOM validation for engineering teams.
ドロップイン代替品: IRLZ44ZPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRLZ44ZPBF （同一形状・フットプリント） — 相違点: Gate Threshold Voltage (VGS(th)), Mounting Type, Package, Technology, Total Gate Charge (Qg).
クイック比較ツール — 並列比較する代替部品を選択:
IRLZ44NPBF
✅ ドロップイン✓ 在庫あり
$0.6779 / 個
データシートを見る →IRLZ44ZPBF
✅ ドロップイン✓ 在庫あり
$1.15 / 個
データシートを見る →AUIRLZ44Z
✅ ドロップイン📋 参考代替品（カタログ未掲載）
STP55NF06L
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFZ48ZPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
FQP47P06
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRLZ44ZPBF 最大定格＆電気的特性
| Manufacturer | Infineon (formerly International Rectifier) |
| Part Number | IRLZ44ZPBF |
| トランジスタタイプ | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) | 51 A |
| RDS(on) Max @ VGS=10V | 13.5 mOhm |
| RDS(on) Max @ VGS=4.5V | 22 mOhm |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) | 24 nC |
| 動作温度範囲 | -55C to +175C |
| Maximum Junction Temperature | 175 C |
| Power Dissipation (PD) | 80 W |
| パッケージ | TO-220AB |
| 実装タイプ | Through-Hole |
| Gate Drive Level | Logic-Level (4.5V to 10V) |
| Technology | HEXFET |
| Qualification | Automotive (per manufacturer description) |
| RoHS ステータス | Compliant |
IRLZ44ZPBF ピン構成
| ピン 1 | Gate — Gate drive input (logic-level, 4.5V to 10V) |
| ピン 2 | Drain — Drain terminal (also connected to mounting tab) |
| ピン 3 | Source — Source terminal (reference for gate drive) |
安全動作領域 (DC, TC=25C)
主な用途
IRLZ44ZPBF の用途: 6 件s: Automotive Fuel Injection Control, DC Motor Drive (H-Bridge Low-Side Switch), Solenoid and Relay Driver, Low-Voltage DC-DC Converter (Buck Switch), Battery Protection and Load Switching, PWM Speed Control for Fans and Pumps.
Automotive Fuel Injection Control
The IRLZ44ZPBF's 55V VDS rating and 51A continuous drain current make it ideally suited for driving automotive fuel injector solenoids. The logic-level gate threshold (VGS(th)=1.0-2.5V) enables direct PWM control from a 5V microcontroller without requiring a gate driver stage, reducing BOM cost in ECU designs. Its 13.5 mOhm RDS(on) at VGS=10V minimizes conduction losses during the high-current pulse phase of injector actuation. The 175C junction temperature rating and automotive-grade qualification per the manufacturer description make it reliable under hood where ambient temperatures exceed 125C. Used in conjunction with a freewheeling diode across the inductive load, it provides robust switching at repetition rates typical of multi-point injection systems.
おすすめ
DC Motor Drive (H-Bridge Low-Side Switch)
In H-bridge motor drive topologies, the IRLZ44ZPBF serves as the low-side switch with current handling up to 51A continuous and 175A pulsed per SOA. The logic-level gate drive allows direct connection to 5V microcontroller PWM outputs, eliminating gate driver ICs in low-power configurations. RDS(on) of 13.5 mOhm keeps conduction losses under 7W at 25A load, manageable with a small TO-220 heatsink. The 175C junction rating supports continuous operation in enclosed motor housings. For bidirectional drive, two IRLZ44ZPBF on the low side pair with two P-channel or high-side N-channel MOSFETs; anti-shoot-through dead-time control in firmware prevents cross-conduction during PWM transitions.
おすすめ
Solenoid and Relay Driver
The IRLZ44ZPBF is well-matched to solenoid and relay driver applications in industrial automation, where 24V DC coils draw 0.5-5A continuous current. Its low on-resistance (13.5 mOhm at VGS=10V) means less than 50 mV drop at 4A load, preserving coil voltage and ensuring reliable actuation. Logic-level gate drive permits direct connection to 5V PLC outputs or microcontroller GPIO. The 55V VDS rating provides 100% headroom over 24V nominal supplies, accommodating inductive flyback spikes when paired with a flyback diode. Repetitive avalanche rating supports the energy dissipated during coil de-energization without requiring external TVS clamps in many designs.
おすすめ
Low-Voltage DC-DC Converter (Buck Switch)
In buck converter designs for 24V-to-12V or 24V-to-5V conversion, the IRLZ44ZPBF serves as the high-side or low-side switch with switching frequencies up to 100 kHz. The total gate charge of 24 nC is manageable for direct microcontroller PWM drive at moderate frequencies (under 50 kHz); above 100 kHz a dedicated gate driver is recommended. RDS(on) of 13.5 mOhm keeps conduction losses proportional to duty cycle and load current, with overall efficiency typically 92-96% in 12V/10A designs. The 55V VDS rating comfortably covers 24V industrial bus plus transient ringing. Thermal performance in TO-220AB allows 80W dissipation with appropriate heatsinking.
おすすめ
Battery Protection and Load Switching
For battery management systems in 12V/24V lead-acid or lithium packs, the IRLZ44ZPBF functions as the main disconnect switch or load switch. Its 51A continuous rating handles peak inverter or motor loads, while the logic-level gate allows direct control from a battery management microcontroller. RDS(on) of 13.5 mOhm produces only 675 mV drop at 50A load, minimizing parasitic drain and improving system efficiency. The TO-220AB package provides mechanical robustness for automotive battery environments. A current-sense resistor in the source path enables cycle-by-cycle overcurrent protection with microcontroller ADC monitoring.
おすすめ
PWM Speed Control for Fans and Pumps
In low-side PWM speed control of 12V/24V DC fans and pumps, the IRLZ44ZPBF switches at 25 kHz typical PWM frequency with logic-level gate drive directly from a microcontroller timer output. RDS(on) of 13.5 mOhm produces less than 5% voltage drop at typical 5-10A fan currents, preserving motor torque at low duty cycles. The 175C junction rating supports continuous high-duty-cycle operation in hot environments such as server rooms or industrial enclosures. Anti-parallel body diode provides inductive current path during PWM off-time. A small RC snubber (100 ohm + 100 nF) across the MOSFET suppresses switching transients that could otherwise couple into adjacent analog circuits.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRLZ44ZPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRLZ44NPBF | AUIRLZ44Z | STP55NF06L | IRFZ48ZPBF |
|---|---|---|---|---|---|
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V | 55 V | 60 V | 55 V |
| Continuous Drain Current (ID) | 51 A | 47 A | 51 A | 50 A | 50 A |
| RDS(on) @ VGS=10V | 13.5 mOhm | 14 mOhm | 13.5 mOhm | 18 mOhm | 14 mOhm |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level) | 1.0 V to 2.5 V (logic-level) | 1.0 V to 2.5 V (logic-level) | 1.0 V to 2.5 V (logic-level) | 2.0 V to 4.0 V (standard) |
| Maximum Junction Temperature | 175 C | 175 C | 175 C | 175 C | 175 C |
| Automotive Qualified | Yes (per manufacturer description) | No | Yes (AU prefix) | No | No |
主な差別化要因
- Logic-level gate threshold enables direct 5V MCU drive （vs IRFZ48ZPBF)
- Higher continuous current rating than cross-brand equivalent （vs STP55NF06L)
- Lower gate charge than cross-brand alternative （vs STP55NF06L)
設計ノート
At 25A continuous load with VGS=10V drive, conduction loss is approximately 25A x 25A x 0.0135 ohm = 8.4W. Estimated: with TO-220AB junction-to-ambient thermal resistance of 62 C/W (no heatsink), junction temperature rises 8.4W x 62 C/W = 521C above ambient - far exceeding 175C rating. A heatsink with thermal resistance below 10 C/W is required. At 25A, a heatsink of 5 C/W keeps junction rise under 42C above ambient (175C junction minus 42C rise minus 25C ambient = 108C margin), well within safe operating area.
Through-hole TO-220AB mounting requires a minimum 0.5 square inch of copper around the drain tab pad on both top and bottom PCB layers, connected by thermal vias (typically 9-16 vias of 0.3mm diameter) to spread heat into inner copper planes. Keep source and gate traces short and away from switching node to minimize parasitic inductance. Place gate resistor (10-100 ohm) within 5mm of gate pin to control ringing.
Do not assume 4.5V gate drive gives same RDS(on) as 10V drive - per manufacturer datasheet, RDS(on) at 4.5V is 22 mOhm versus 13.5 mOhm at 10V, a 63% increase that doubles conduction loss. For high-current (>20A) applications, use a gate driver to ensure full VGS enhancement. Additionally, body diode reverse recovery time can cause shoot-through in half-bridge configurations; add dead-time of at least 200 ns in PWM control.
コンプライアンス情報
RoHS and REACH compliant per manufacturer product page. PBF suffix indicates Pb-free terminal finish. Automotive-grade per manufacturer description (AEC-Q101 likely; AEC-Q100 is a different qualification standard and not_applicable to discrete MOSFETs).
