LTC4446EMS8E - 100V Hi-Side/Lo-Side MOSFET Driver | ADI
部品番号: LTC4446EMS8E ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.46 | $34.60 |
| 100 | $3.07 | $307.00 |
| 500 | $2.76 | $1,380.00 |
| 1,000 | $2.62 | $2,620.00 |
LTC4446EMS8E 概要
A high-side/low-side gate driver is a specialized power-management IC that translates low-power PWM control signals from a controller IC into the high-current drive needed to switch the gate of a power MOSFET. It belongs to the broader category of gate drivers (a subclass of PMIC > power management IC > semiconductor). The LTC4446 family uses a bootstrap supply architecture to generate the floating high-side rail, enabling it to switch the upper MOSFET in a half-bridge up to 100V above ground.
Key features include bootstrap supply voltage up to 114V, integrated adaptive shoot-through protection, undervoltage lockout (UVLO) on both VCC and bootstrap supplies, and TTL/CMOS-compatible input logic. The exposed pad on the MSOP-EP package provides a low thermal resistance path, supporting reliable operation at high switching frequencies (the Analog Devices datasheet specifies capability up to several hundred kHz).
Technically, the LTC4446 uses a separate driver channel for high-side and low-side outputs with independent pull-up/pull-down structures. The internal charge pump and bootstrap diode maintain the high-side supply voltage across the switching cycle, while adaptive dead-time control prevents cross-conduction. This architecture minimizes switching losses in high-capacitance MOSFETs typical of telecom, industrial, and automotive power conversion.
Typical applications include DC/DC converters with input voltages up to 100V, motor drivers, telecom power supplies, and high-current synchronous buck or boost converters where fast switching transitions minimize switching losses in high-Cgs MOSFETs.
When designing with the LTC4446, ensure the bootstrap capacitor value is sized for the switching frequency and MOSFET gate charge, and that the exposed pad is soldered to a sufficient copper pour for thermal dissipation. Proper layout of the high-side switching loop minimizes voltage overshoot and EMI.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the LTC4446EMS8E that are not consolidated on the manufacturer product page.
ドロップイン代替品: LTC4446EMS8E — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
LTC4446IMS8E
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LTC4446EMS8E#PBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LTC4446HMS8E
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
LTC4444IMS8E
✅ ドロップイン📋 参考代替品（カタログ未掲載）
UCC27211
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LTC4446EMS8E 最大定格＆電気的特性
| Driver Configuration | Half-Bridge (High-Side / Low-Side) |
| Bootstrap Supply Voltage (Max) | 114 V |
| Supply Voltage (High-Side Rail Max) | 100 V |
| Peak Top Gate Pull-Up Current | 2.5 A |
| Peak Bottom Gate Pull-Up Current | 3 A |
| Top Gate Pull-Down Resistance | 1.2 ohm |
| Bottom Gate Pull-Down Resistance | 0.55 ohm |
| Top Gate Rise Time (1 nF load) | 8 ns |
| Top Gate Fall Time (1 nF load) | 5 ns |
| Input Logic Compatibility | TTL / CMOS |
| パッケージ | MSOP-8 with Exposed Pad (MSOP-EP) |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant (PBF suffix) |
| Lead-Free | Yes (PBF suffix) |
| Shoot-Through Protection | Adaptive / Built-in |
| Undervoltage Lockout (UVLO) | Yes (VCC and bootstrap) |
LTC4446EMS8E ピン構成
| ピン 1 | VCC — Logic / low-side supply voltage (input) |
| ピン 2 | INPUT — PWM logic input (TTL/CMOS compatible) |
| ピン 3 | GND — Logic ground (signal ground) |
| ピン 4 | BG — Bottom-gate driver output (low-side) |
| ピン 5 | PGND — Power ground (bottom-gate return) - exposed pad |
| ピン 6 | TS — Top-gate source / bootstrap return |
| ピン 7 | TG — Top-gate driver output (high-side) |
| ピン 8 | BS — Bootstrap supply (high-side driver rail) |
主な用途
LTC4446EMS8E の用途: 6 件s: 48V Telecom DC/DC Converter, High-Voltage Synchronous Buck Converter, Industrial Motor Driver Half-Bridge Stage, Solar Microinverter Power Stage, Automotive 48V Mild-Hybrid DC/DC, High-Current Synchronous Boost Converter.
48V Telecom DC/DC Converter
The LTC4446EMS8E is widely used as the high-side/low-side gate driver in 48V-input telecom DC/DC converters, where its 100V high-side rail rating and 2.5A peak gate drive current handle the synchronous MOSFETs in buck or boost stages. The 5ns/8ns rise/fall times driving 1nF loads minimize switching losses even at 500kHz+ switching frequencies, while adaptive shoot-through protection prevents cross-conduction that would otherwise cause catastrophic shoot-through current. The MSOP-EP exposed pad provides sufficient thermal dissipation for continuous operation at full gate drive duty cycle. Designers typically pair it with 100V-rated N-channel MOSFETs in a half-bridge configuration, using a 0.1uF to 1uF X7R bootstrap capacitor sized for the operating frequency and total gate charge (Qg) of the upper MOSFET.
おすすめ
High-Voltage Synchronous Buck Converter
In high-voltage synchronous buck converter designs, the LTC4446EMS8E drives the high-side and low-side N-channel MOSFETs with its 2.5A peak top-gate pull-up and 1.2 ohm top-gate pull-down providing fast switching transitions. The 100V rating covers 36V-72V industrial battery inputs with ample margin, while the TTL/CMOS-compatible input accepts PWM signals directly from a controller like the LTC3851 or LTC3891. The internal bootstrap diode and adaptive dead-time control simplify the schematic and prevent shoot-through. The 0.55 ohm bottom-gate pull-down ensures the low-side MOSFET turns off quickly, preventing body diode conduction losses. Designers benefit from the MSOP-EP package's small footprint while the exposed pad handles gate drive losses.
おすすめ
Industrial Motor Driver Half-Bridge Stage
The LTC4446EMS8E serves as the gate driver for industrial motor driver half-bridge stages, where its 2.5A peak drive current and 100V rating support 48V-72V brushless DC (BLDC) and stepper motor drives. The fast 5ns/8ns rise/fall times driving 1nF enable PWM frequencies up to 200kHz, allowing finer current control and reduced audible switching noise in motor windings. The adaptive shoot-through protection is critical in motor applications where a cross-conduction event can quickly destroy the half-bridge MOSFETs. The MSOP-EP package suits compact motor control PCB layouts where space is constrained. The exposed pad is soldered to a substantial copper pour to dissipate heat from continuous switching at high duty cycle.
おすすめ
Solar Microinverter Power Stage
In photovoltaic solar microinverter designs, the LTC4446EMS8E drives the high-side and low-side MOSFETs in the DC-DC boost or full-bridge stages that step up panel voltage (typically 30-60V) to grid-tie levels. The 100V high-side rating accommodates open-circuit panel voltages up to 100V in cold conditions, while the 2.5A peak drive current switches high-current MOSFETs efficiently. The bootstrap supply architecture simplifies the design by generating the high-side supply rail without an auxiliary isolated supply. The MSOP-EP package and small footprint are valuable in microinverter designs where PCB real estate is at a premium. Adaptive dead-time control maximizes efficiency across varying load conditions typical of solar input.
おすすめ
Automotive 48V Mild-Hybrid DC/DC
The LTC4446EMS8E#PBF (lead-free RoHS-compliant variant) is used in automotive 48V mild-hybrid DC/DC converter designs, where its 100V high-side rail rating covers 48V bus transients up to 100V (per LV148 specification). The 2.5A peak gate drive current switches the high-current MOSFETs typical of 1-3 kW converters used to step down 48V to 12V for legacy vehicle loads. The wide operating temperature range of the EMS8E suffix supports under-hood automotive environments. The exposed pad of the MSOP-EP package provides reliable thermal performance at continuous full load. Adaptive shoot-through protection is mandatory in automotive designs where a cross-conduction event could damage expensive MOSFETs and trigger warranty returns.
おすすめ
High-Current Synchronous Boost Converter
The LTC4446EMS8E drives the MOSFETs in high-current synchronous boost converters used in battery-powered systems, USB-PD adapters, and LED drivers where input-to-output step-up requires high-side switching. Its 2.5A peak top-gate pull-up current and 1.2 ohm pull-down resistance enable fast switching of large MOSFETs with high gate charge, minimizing transition losses at high currents (20A+). The 100V high-side rating covers wide-Vin boost topologies (e.g., 12V to 400V for HID ballasts) and is over-specified for most battery applications, providing safety margin. The MSOP-EP package suits compact designs. The exposed pad must be soldered to a minimum 100mm^2 copper pour to keep junction temperature within limits at high switching frequencies.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: LTC4446EMS8E — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | LTC4446IMS8E | LTC4446EMS8E#PBF | LTC4446HMS8E | LTC4444IMS8E | UCC27211 | IRS2301SPBF |
|---|---|---|---|---|---|---|---|
| Brand | Analog Devices | Analog Devices | Analog Devices | Analog Devices | Analog Devices | Texas Instruments | Infineon |
| Package | MSOP-8 (Exposed Pad) | MSOP-8 (Exposed Pad) - same | MSOP-8 (Exposed Pad) - same | MSOP-8 (Exposed Pad) - same | MSOP-8 (Exposed Pad) - same | MSOP-8 (PowerPAD) - same | SOIC-8 - different |
| Driver Configuration | Half-Bridge (Hi-Side / Lo-Side) | Half-Bridge (Hi-Side / Lo-Side) | Half-Bridge (Hi-Side / Lo-Side) | Half-Bridge (Hi-Side / Lo-Side) | Half-Bridge (Hi-Side / Lo-Side) | Half-Bridge (Hi-Side / Lo-Side) | Half-Bridge (Hi-Side / Lo-Side) |
| High-Side Rail Voltage (Max) | 100 V | 100 V | 100 V | 100 V | 14 V (low-voltage version) | 120 V | 200 V |
| Peak Top-Gate Pull-Up Current | 2.5 A | 2.5 A | 2.5 A | 2.5 A | 1.5 A (lower) | 4 A (higher) | 2.0 A |
| Rise Time (1 nF load) | 8 ns | 8 ns | 8 ns | 8 ns | 20 ns (slower) | 7 ns | 40 ns (slower) |
| Operating Temperature Grade | Extended (-40C to +125C) | Industrial (-40C to +85C) | Extended (same) | High-temp / Military grade | Industrial | Extended (Automotive Q1 available) | Industrial |
| Approximate 1ku Price (USD) | $2.62 | $2.50 (similar) | $2.62 (same) | $5.00+ (higher grade) | $2.00 (lower voltage = cheaper) | $1.85 (TI economy) | $1.95 (Infineon) |
主な差別化要因
- Higher voltage rating (100V high-side rail) than LTC4444IMS8E （vs LTC4444IMS8E)
- Faster switching transitions than IRS2301SPBF （vs IRS2301SPBF)
- Smaller footprint than UCC27211 with comparable drive strength （vs UCC27211)
設計ノート
The exposed pad (pin 5 / PGND) of the MSOP-EP package must be soldered directly to the PCB ground plane to provide both electrical return for the bottom-gate driver and thermal dissipation for the gate drive losses. Use at least 100 mm^2 of 2 oz copper pour on the top layer connected to PGND, plus thermal vias to inner ground planes. Inadequate thermal connection is the leading cause of LTC4446EMS8E failures in high-frequency switching designs where gate drive losses accumulate.
Bootstrap capacitor (between BS and TS pins) sizing is critical: use a 0.1uF to 1uF X7R ceramic capacitor rated for 25V or higher. Calculate minimum C_BS using: C_BS >= (Q_G_total * 2) / V_BS_drop_max where Q_G_total is the total gate charge of the high-side MOSFET and V_BS_drop_max is the allowable bootstrap voltage droop (typically 100-200 mV). Too-small bootstrap capacitance causes high-side UVLO faults at high duty cycles.
Minimize the high-side switching loop area: the path from the input capacitor positive terminal, through the high-side MOSFET, back to the input capacitor negative terminal, and through the bottom-side MOSFET must be as small and tight as possible. A switching loop area greater than ~5 cm^2 will produce excessive voltage overshoot, ringing, and EMI. Use a ground plane directly under the high-side switching loop to minimize parasitic inductance, and place the bootstrap capacitor as close as possible to the BS and TS pins.
The INPUT pin (pin 2) accepts TTL/CMOS logic. Series-terminate the input trace with a 33-100 ohm resistor if the trace length exceeds 25mm to prevent ringing when the controller IC drives the LTC4446EMS8E input. Place the input series resistor within 5mm of the LTC4446 INPUT pin. Avoid routing the input trace parallel to or under the TG or BG output traces to prevent capacitive coupling that could cause false triggering during high-dV/dt transitions.
Do not exceed the absolute maximum bootstrap voltage of 114V - this includes transients from the high-side switching node. Add a TVS or snubber clamp if the switching node can overshoot above 100V during dead time or load transients. Also, do not operate the LTC4446EMS8E with VCC below the UVLO threshold (~6V typical) or above the absolute maximum (~15V), as this can cause logic malfunction or permanent damage.
コンプライアンス情報
RoHS compliant per #PBF suffix designation on Analog Devices part numbering. The LTC4446EMS8E is not AEC-Q100 qualified; for automotive 48V mild-hybrid applications, validate the operating temperature profile against the E-grade spec (-40C to +125C). REACH compliance stated by Analog Devices product documentation.
