MD7IC2012GNR1 - 1.3W W-CDMA RF LDMOS PA | NXP | 1805-2170 MHz
部品番号: MD7IC2012GNR1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $35.2 | $352.00 |
| 100 | $31.4 | $3,140.00 |
| 500 | $28.1 | $14,050.00 |
| 1,000 | $25.5 | $25,500.00 |
MD7IC2012GNR1 概要
An RF power amplifier (PA) is the final active stage of a wireless transmitter chain that boosts a low-level modulated RF signal up to the radiated power level required by the link budget. LDMO S (Laterally Diffused Metal-Oxide Semiconductor) PAs are the dominant technology for sub-3 GHz macro-cell base-station transmitters because LDMOS combines high breakdown voltage, high power density, good RF efficiency, and lower cost than equivalent GaN or GaAs alternatives. In the transmitter hierarchy, this part sits below the digital baseband, the up-converting mixer, and the driver amplifier, and immediately before the isolator, filter, and antenna.
Key features include 1.3 W average W-CDMA output power, 28 V typical drain bias, integrated input and output matching networks that eliminate external RF tuning, a wide instantaneous bandwidth covering 1805-2170 MHz, multi-stage topology optimized for linearity (ACLR and EVM), and built-in ESD protection. The on-chip matching simplifies the bill of materials and reduces PCB layout complexity compared to discrete LDMOS PA designs.
Architecturally, the MD7IC2012N die uses two cascaded LDMOS gain stages with on-die matching, bias networks, and thermal vias to the exposed flange. The on-chip matching is engineered for the 1.8-2.2 GHz cellular bands with the appropriate harmonic terminations for W-CDMA modulation. Designers typically use it as a driver PA in picocell or small-cell base stations, or as a final stage in low-power repeaters.
Typical applications include W-CDMA / UMTS / LTE picocell and femtocell base-station PA stages, 1800 MHz DCS and 1900 MHz PCS linear PA blocks, 2.1 GHz UMTS driver amplifiers, and wireless repeater or booster final amplifiers. The wide band coverage also makes it usable in multi-band repeater designs where a single PA chain serves multiple operator bands.
When designing with this part, ensure the PCB thermal pad receives generous copper pour and thermal vias to keep the junction temperature below the rated maximum. Because the part is internally matched, designers should follow the reference design evaluation board layout closely - any mismatch in the output trace will degrade P1dB and ACLR. Always sequence VDD and the gate bias properly at power-up to avoid in-rush current damage to the die.
This page synthesizes authorized distributor pricing, same-brand drop-in alternatives, and design guidance drawn from the manufacturer datasheet and reference evaluation board - information not collated on any single distributor or manufacturer page.
ドロップイン代替品: MD7IC2012GNR1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MD7IC2012NR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MD7IC21100GNR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MD7IC2250GNR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MD7IC2750GNR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MD7IC1810GNR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MD7IC2012GNR1 最大定格＆電気的特性
| Technology | RF LDMOS (Laterally Diffused MOSFET) |
| 機能 | Wideband Integrated Power Amplifier (2-stage) |
| Frequency Range | 1805 MHz to 2170 MHz |
| Modulation / Standard | W-CDMA / UMTS / LTE (single-carrier W-CDMA driver performance) |
| Supply Voltage (VDD) | 24 V to 32 V (28 V typical) |
| Output Power (Average, W-CDMA) | 1.3 W Avg. |
| Quiescent Current (per stage) | IDQ1A = IDQ1B = 20 mA; IDQ2A = IDQ2B = 70 mA (typical) |
| Channel Bandwidth | 3.84 MHz (W-CDMA) |
| Input Signal PAR | 7.5 dB at 0.01% probability on CCDF |
| On-chip Matching | Yes (input and output) |
| パッケージ | TO-270 WB-14 GULL (gull-wing surface mount, 14-lead) |
| Lead Configuration | Gull-wing SMD ("G" suffix; non-G variant = straight leads) |
| 実装タイプ | Surface Mount |
| Operating Mode | Driver or final-stage PA |
| RoHS ステータス | Compliant |
MD7IC2012GNR1 ピン構成
| ピン 1 | RF_IN — RF input (50 ohm, on-chip matched) |
| ピン 2 | VGG1 — Gate bias, stage 1 |
| ピン 3 | VDD1 — Drain supply, stage 1 (24-32 V) |
| ピン 4 | GND — Ground (also back-side flange) |
| ピン 5 | VGG2 — Gate bias, stage 2 |
| ピン 6 | VDD2 — Drain supply, stage 2 (24-32 V) |
| ピン 7 | NC — Not connected |
| ピン 8 | GND — Ground |
| ピン 9 | NC — Not connected |
| ピン 10 | GND — Ground |
| ピン 11 | NC — Not connected |
| ピン 12 | RF_OUT — RF output (50 ohm, on-chip matched) |
| ピン 13 | GND — Ground |
| ピン 14 | NC — Not connected |
安全動作領域
主な用途
MD7IC2012GNR1 の用途: 6 件s: W-CDMA / UMTS Picocell PA Stage, 1800 MHz DCS / 1900 MHz PCS Linear PA, LTE Small-Cell Driver Amplifier, Wireless Repeater / Booster Final PA, Multi-Band Base-Station Transmitter, RF Front-End Module Driver.
W-CDMA / UMTS Picocell PA Stage
The MD7IC2012GNR1's 1.3 W average W-CDMA output power and 1805-2170 MHz coverage make it a natural fit for picocell and small-cell base-station PA chains. Its on-chip input and output matching eliminates external RF tuning, accelerating the design cycle for small-form-factor base-station modules where PCB area is at a premium. Quiescent bias of 20 mA and 70 mA per stage is optimized for linearity at the 1.3 W operating level, helping meet 3GPP ACLR and EVM masks.
おすすめ
1800 MHz DCS / 1900 MHz PCS Linear PA
With instantaneous bandwidth from 1805 MHz to 2170 MHz, the MD7IC2012GNR1 directly covers the 1800 MHz DCS and 1900 MHz PCS uplink bands used in GSM/EDGE and UMTS systems worldwide. The 28 V drain bias delivers the headroom needed to maintain linearity across the 7.5 dB PAR of single-carrier W-CDMA, simplifying compliance with the stringent out-of-band emission requirements of those bands.
おすすめ
LTE Small-Cell Driver Amplifier
The MD7IC2012GNR1 works as a driver stage ahead of a higher-power final PA in LTE small-cell base stations operating in Band 1 (2100 MHz), Band 2 (1900 MHz), and Band 3 (1800 MHz). Its 1.3 W average output provides the gain needed to bring a low-power transceiver output up to a level suitable for the final-stage device. The internally biased two-stage topology minimizes external component count compared to discrete LDMOS designs.
おすすめ
Wireless Repeater / Booster Final PA
In indoor wireless repeater or signal-booster designs, the MD7IC2012GNR1 can serve as the final PA stage when only modest output power is required and the cost of a discrete LDMOS solution is not justified. The on-chip matching simplifies repeater layouts and reduces tuner adjustments during production. The wide 1805-2170 MHz band lets a single repeater module serve multiple operator bands with the appropriate filtering.
おすすめ
Multi-Band Base-Station Transmitter
Multi-band base-station designs that need a single PA chain to cover DCS, PCS, and UMTS bands can use the MD7IC2012GNR1 with band-switched filtering at its output. The device's wide instantaneous bandwidth avoids the need for separate PAs per band, reducing BOM and PCB area. Designers use the on-chip matching network's tolerance to maintain acceptable efficiency and ACLR across each band without per-band retuning.
おすすめ
RF Front-End Module Driver
In RF front-end modules for small-cell infrastructure, the MD7IC2012GNR1 provides the gain block between the upconverter output and the antenna-side filtering. The 1.3 W capability comfortably drives final PAs in the 5-25 W class. Its TO-270 WB-14 GULL package has a back-side thermal pad that supports efficient heat removal when mounted on a copper-clad PCB with thermal vias.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MD7IC2012GNR1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MD7IC2012NR1 | MD7IC21100GNR1 | MD7IC2250GNR1 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270 WB-14 GULL | TO-270 WB-14 (straight leads) | TO-270 WB-14 GULL - same | TO-270 WB-14 GULL - same |
| Frequency Range | 1805-2170 MHz | 1805-2170 MHz - same | Different band, see datasheet | Different band, see datasheet |
| Output Power (Avg W-CDMA) | 1.3 W | 1.3 W - same | Higher (final-stage class) | ~50 W class |
| Drain Supply Voltage | 24-32 V (28 V typ) | 24-32 V (28 V typ) - same | 28 V typical | 28 V typical |
| On-chip Matching | Yes (input + output) | Yes - same | Yes | Yes |
| Lead Form | Gull-wing (G suffix) | Straight leads (no G suffix) | Gull-wing | Gull-wing |
| Technology | RF LDMOS | RF LDMOS - same | RF LDMOS | RF LDMOS |
主な差別化要因
- Gull-wing SMD lead configuration for high-volume SMT assembly （vs MD7IC2012NR1)
- Lowest power class in the NXP TO-270 WB-14 GULL PA family （vs MD7IC21100GNR1)
- On-chip input and output matching eliminates external RF tuning （vs Discrete LDMOS PA designs)
設計ノート
Estimated: at 1.3 W output and 28 V supply, the PA draws approximately 250-350 mA from VDD, dissipating roughly 7-10 W in the die. The TO-270 back-side flange must be soldered to a copper-clad PCB pad with multiple thermal vias to keep junction temperature below the rated maximum. Inadequate thermal management will reduce P1dB and accelerate MTTF degradation.
Follow the NXP reference evaluation board layout closely. The on-chip matching assumes a specific lead-frame-to-trace transition; deviating from the reference trace geometry will introduce mismatch and degrade gain flatness across the 1805-2170 MHz band. Use a continuous ground plane on layer 2 with stitching vias around the RF input and output traces.
Sequence VDD and the gate bias (VGG) properly during power-up. Apply VGG first to bias the gates to a safe idle, then ramp VDD to the operational 28 V to avoid in-rush current that can damage the LDMOS die. According to the NXP datasheet, IDQ1A=IDQ1B=20 mA and IDQ2A=IDQ2B=70 mA are the recommended per-stage quiescent currents for W-CDMA operation.
Keep the RF input and output traces short, with 50 ohm controlled impedance. Place bias decoupling capacitors as close as possible to the VDD and VGG pins. Avoid routing digital control signals or DC bias traces across the RF output path to prevent parasitic coupling into the modulated envelope.
コンプライアンス情報
RoHS compliance per NXP product page; this is an RF power amplifier IC not subject to AEC-Q100 automotive qualification.
