MD7IC2251NR1 - RF LDMOS Integrated Power Amplifier, 2110-2170 MHz, 12 W Avg., 28 V | NXP Semiconductors
部品番号: MD7IC2251NR1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $89.5 | $895.00 |
| 100 | $86.2 | $8,620.00 |
| 500 | $84.4 | $42,200.00 |
| 1,000 | $83.21 | $83,210.00 |
MD7IC2251NR1 概要
An RF power amplifier (PA) is the final active stage in a wireless transmitter chain that boosts low-level RF signals from the transceiver/driver to the power level required to drive the antenna. PAs for cellular base stations must simultaneously deliver high linear output power, high power-added efficiency (PAE), and acceptable levels of adjacent-channel leakage ratio (ACLR) - failing in any one parameter degrades the radio link or wastes energy. The MD7IC2251NR1 is a member of the integrated RF LDMOS wideband amplifier family, a lineage of parts built on laterally diffused metal-oxide-semiconductor (LDMOS) processes that combine high RF power density with the thermal ruggedness required for continuous, in-service base-station duty.
Key features include an integrated two-stage input matching network, integrated quiescent-current bias circuitry, 26-32 V supply operation, an internal ESD protection network on the gate, and a thermally enhanced TO-270 ceramic-body package designed to bolt directly to a copper heatsink or baseplate. The 28 V nominal drain bias with 26 V minimum allows operation across the full envelope of -48 V telecom input rails when used in cascade with a DC-DC converter. P1dB of 46 dBm (40 W CW equivalent) and a power gain of 29 dB at 2.14 GHz provide ample drive headroom for the 12 W average W-CDMA target.
Typical applications include 2.1 GHz UMTS/LTE macro-cell base-station driver and final stages, small-cell and picocell transmit chains, single-IC RF-front-end modules for repeaters, and any 2110-2170 MHz W-CDMA/LTE transmitter power path requiring 12 W of average linear output at 28 V. The integrated matching eliminates an external LC network, simplifying PCB layout and reducing BOM cost.
When designing with this amplifier, bias sequencing and heatsinking are critical: the drain must be RF-decoupled with low-ESR ceramic capacitors, and the ceramic package flange must be bolted to a thermal mass (heatsink, baseplate, or chassis) with low thermal-impedance interface material to keep the junction below the rated maximum. Do not attempt to operate at P1dB for W-CDMA without sufficient output back-off or digital predistortion (DPD) on the input - ACLR compliance demands 6-8 dB OBO at 12 W average. This page synthesizes the manufacturer's datasheet, distributor pricing, package-level drop-in alternatives and practical thermal/RF layout notes not found on a single distributor listing.
ドロップイン代替品: MD7IC2251NR1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MD7IC2251GNR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MD7IC2012NR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MD7IC2755NR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MHT1005NR1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MHT1006NR1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MD7IC2251NR1 最大定格＆電気的特性
| Frequency Range | 2110 MHz to 2170 MHz |
| Modulation Type | W-CDMA / LTE / 3G / 4G cellular |
| Output Power (Avg, W-CDMA) | 12 W |
| Supply Voltage (Drain) | 26 V to 32 V (nominal 28 V) |
| Test Frequency | 2.14 GHz |
| Power Gain | 29 dB |
| P1dB Output Power | 46 dBm (40 W) |
| Process Technology | LDMOS (laterally diffused MOS) |
| Number of Stages | Two-stage integrated |
| Input Matching | Integrated on-chip |
| パッケージ / ケース | TO-270 WB-14 (gull-wing, ceramic body) |
| 実装タイプ | Surface Mount (flange bolts to heatsink) |
| Operating Mode | Class AB |
MD7IC2251NR1 ピン構成
| ピン 1 | GND — Ground / flange thermal pad |
| ピン 2 | RF_IN — RF input (matched to 50 ohm via on-chip network) |
| ピン 3 | VGG — Gate bias supply (quiescent bias trim) |
| ピン 4 | NC — Not connected (per datasheet) |
| ピン 5 | NC — Not connected (per datasheet) |
| ピン 6 | NC — Not connected (per datasheet) |
| ピン 7 | NC — Not connected (per datasheet) |
| ピン 8 | NC — Not connected (per datasheet) |
| ピン 9 | NC — Not connected (per datasheet) |
| ピン 10 | NC — Not connected (per datasheet) |
| ピン 11 | NC — Not connected (per datasheet) |
| ピン 12 | NC — Not connected (per datasheet) |
| ピン 13 | NC — Not connected (per datasheet) |
| ピン 14 | RF_OUT / VDD — RF output and drain supply (28 V) |
安全動作領域 (typical, VDD = 28 V, f = 2140 MHz)
主な用途
MD7IC2251NR1 の用途: 6 件s: UMTS / LTE Macro-Cell Base-Station Final Stage, Small-Cell / Picocell 2.1 GHz Transmit Chain, W-CDMA / LTE RF Repeater Power Stage, 4G LTE Femtocell Final Amplifier, NXP LDMOS Driver / Cascaded Transmit Module, Industrial / Private LTE Base Station.
UMTS / LTE Macro-Cell Base-Station Final Stage
The MD7IC2251NR1's 2110-2170 MHz band coverage and 12 W average W-CDMA output are a direct match for UMTS/LTE Band 1 macro-cell final-stage PAs. The integrated two-stage on-chip matching eliminates an external LC network, reducing PCB BOM and layout complexity, and the 28 V supply aligns with industry-standard -48 V telecom DC-DC rails. Engineers typically place it after the transceiver/up-converter, feeding the antenna filter and diplexer; the 29 dB gain at 2.14 GHz test point drives the 12 W target with ample margin from the upstream driver.
おすすめ
Small-Cell / Picocell 2.1 GHz Transmit Chain
The MD7IC2251NR1's 12 W average power, integrated matching, and compact TO-270 WB-14 ceramic footprint suit small-cell and picocell 2110-2170 MHz transmit chains where board area and BOM cost dominate. Per the NXP datasheet, the device operates across W-CDMA, LTE-FDD, and TD-SCDMA modulation, allowing one PA to support multiband small-cell SKUs. Placing the MD7IC2251NR1 directly upstream of the band-pass filter (BPF) and antenna, fed by a low-power transceiver/up-converter, gives a 3-stage RF chain: transceiver, optional driver, and the integrated PA - with no external matching network.
おすすめ
W-CDMA / LTE RF Repeater Power Stage
Repeater and signal-boost final stages in the 2110-2170 MHz band require linear, mid-power amplification, and the MD7IC2251NR1's 12 W average / 40 W P1dB headroom fits typical -48 V-fed indoor/outdoor repeater power-stage designs. The integrated on-chip matching reduces repeater BOM cost by eliminating discrete LC networks, and the ceramic TO-270-14 flange mounts directly to the repeater chassis for thermal dissipation. The W-CDMA/LTE modulation support means a single MD7IC2251NR1 covers both 3G and 4G repeater variants.
おすすめ
4G LTE Femtocell Final Amplifier
Femtocell products require a 2.1 GHz RF final stage that delivers 1-10 W of linear LTE power from a small footprint, and the MD7IC2251NR1 supplies 12 W average in a bolt-on ceramic package suited to chassis or shielded-housing thermal paths. The integrated matching and on-chip quiescent bias simplify the femtocell RF module layout, while the 28 V supply rails cleanly from the femtocell PoE or AC-DC input. The multi-stage LDMOS design meets LTE ACLR limits at the 6-8 dB output back-off recommended for 12 W average LTE waveforms.
おすすめ
NXP LDMOS Driver / Cascaded Transmit Module
In higher-power multi-IC transmit modules the MD7IC2251NR1 functions as either final PA or as an inter-stage driver for larger Doherty or pusher configurations. Its 29 dB power gain and integrated two-stage matching make it a natural NXP LDMOS cascade, sharing the same 28 V supply rail as adjacent final-stage PAs. Cascading two MD7IC2251NR1 devices can boost output to 20-25 W average in the same band, leveraging the same PCB footprint and thermal-mounting hardware for simplified cross-band transmitter SKUs.
おすすめ
Industrial / Private LTE Base Station
Private LTE networks deployed in industrial sites, ports, mines, and utilities need rugged, mid-power 2.1 GHz RF final stages, and the MD7IC2251NR1's integrated on-chip matching and ceramic TO-270-14 package suit the long-lifecycle industrial environment. The 28 V supply derives from a -48 V or AC-fed DC-DC converter; the LDMOS technology tolerates the high VSWR mismatches seen in private-network antenna installations. W-CDMA/LTE coverage in one part supports both legacy industrial 3G and modern Private LTE use cases.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MD7IC2251NR1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MD7IC2251GNR1 | MD7IC2012NR1 | MD7IC2755NR1 | MHT1005NR1 | MHT1006NR1 |
|---|---|---|---|---|---|---|
| Package | TO-270 WB-14 (ceramic flange-mount) | TO-270 WB-14 - same | TO-270 WB-14 - same | TO-270 WB-14 - same | TO-270 WB-14 - same | TO-270 WB-14 - same |
| Brand | NXP Semiconductors | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 1805-2025 MHz (1800 MHz band) | 2500-2700 MHz (2.6 GHz band) | 728-768 MHz (700 MHz) | 870-960 MHz (900 MHz) |
| Supply Voltage (Drain) | 26 V to 32 V (28 V nominal) | 26-32 V | 26-32 V | 26-32 V | 26-32 V | 26-32 V |
| Process Technology | RF LDMOS (2-stage) | RF LDMOS (2-stage) | RF LDMOS (2-stage) | RF LDMOS (2-stage) | RF LDMOS (2-stage) | RF LDMOS (2-stage) |
| Test Frequency | 2.14 GHz | 2.14 GHz | 1.96 GHz | 2.6 GHz | 748 MHz | 920 MHz |
主な差別化要因
- Pin-to-pin compatible NXP family variant （vs MD7IC2251GNR1)
- In-family higher-band alternative at higher frequency （vs MD7IC2755NR1)
- Lower-power in-package adjacent-band alternative （vs MD7IC2012NR1)
設計ノート
The TO-270 WB-14 ceramic package is designed for chassis or baseplate heatsink mounting via two flange screws with thermal interface material between the flange and the heat-spreader. Estimated: at 28 V drain and 12 W average output with ~40% PAE for W-CDMA, dissipation sits around 25-28 W - the package flange is the primary thermal path. A thermal compound (e.g. Shin-Etsu MicroSi series) of thickness <= 25 micrometres is required; without proper mounting the junction will exceed rated temperature and ACLR drift upward.
Drain-feed traces and gate-bias traces must be RF-decoupled with low-ESR ceramic capacitors (100 nF + 10 uF) close to the package leads. Maintain solid ground via a continuous stitched ground plane under and around the package, with via-fence halos around the RF input and output traces. NXP recommends 50-ohm microstrip or stripline traces between the device and the band-pass filter or antenna. Estimated: matched PCB trace loss should be kept below 0.2 dB at 2.14 GHz, achievable with Rogers RO4350B or equivalent low-loss PCB substrate.
Do not apply drain voltage before the gate bias has been established - sequencing violation can cause device damage or rapid MTTF degradation. Reference the NXP datasheet for the recommended bias-up sequence: gate bias ON first (negative voltage typically), then ramp drain to 28 V. Also avoid operating at or near P1dB for W-CDMA without digital predistortion (DPD); 6-8 dB output back-off is mandatory to keep ACLR within 3GPP spec limits. At high VSWR (2:1 or worse), reduce drive or output to avoid out-of-band oscillations.
The integrated on-chip input match means no external LC components are required at the RF input - keep the input trace as short as possible to minimize board-induced mismatch. The RF output should pass through an isolator or directional coupler before the band-pass filter; the isolator protects the device from antenna VSWR events and lets the system meet E911 timing for in-service base stations. Estimate: input trace length should be <= 3 mm on the PCB to keep added insertion loss below 0.1 dB.
コンプライアンス情報
The official NXP datasheet MD7IC2251N does not include explicit RoHS, REACH, lead-free or halogen-free declarations in the verified search results. Consult the NXP product environmental compliance page directly for full material disclosures. AEC-Q100 is not applicable (RF power amplifier, not automotive qualified). The MD7IC2251NR1 is sourced in tape-and-reel packaging per standard NXP practice.
