MMG20271HT1 - 1.5-2.7 GHz E-pHEMT LNA/GPA, 16 dB Gain, 27.5 dBm | NXP
部品番号: MMG20271HT1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $5.42 | $5.42 |
| 10 | $4.88 | $48.80 |
| 100 | $4.35 | $435.00 |
| 500 | $3.92 | $1,960.00 |
| 1,000 | $3.5 | $3,500.00 |
MMG20271HT1 概要
An LNA (Low Noise Amplifier) is the first gain stage in a wireless receiver chain whose primary job is to add gain while adding as little noise as possible so that the downstream mixer and ADC see an elevated signal above their noise floor. The MMG20271HT1 doubles as a General Purpose Amplifier (GPA) and as a driver amplifier in the transmit chain, and is one of a broader taxonomy of RF MMICs that includes LNAs, gain blocks, driver amplifiers, and power amplifiers - all members of the integrated RF amplifier family used inside modern wireless front-ends.
Key differentiating features include a low noise figure (typical NF around 1.5 dB at mid-band), high linearity (output IP3 in the +38 dBm region) enabling it to handle W-CDMA, LTE, and TD-SCDMA signals with large peak-to-average ratios, integrated 50-ohm matching on input and output, and a single +5 V supply rail. The QFN 3x3 package provides a low-inductance ground path and excellent thermal dissipation for the small plastic outline.
From an architecture standpoint, the E-pHEMT process combines the high electron mobility of GaAs with an enhancement-mode gate structure that simplifies biasing by removing the need for negative gate voltages. On-chip bias regulation and active biasing compensate for temperature and process variation, giving stable quiescent current over -40C to +85C operation.
Typical applications include cellular base station receiver LNA front-ends (Cellular 1.7-2.0 GHz, PCS 1.85-1.99 GHz, LTE bands), TD-SCDMA and W-CDMA driver stages, WLAN 2.4 GHz ISM front-ends, and repeater / DAS gain blocks. It can be used as a driver before a higher-power PA, or as a second-stage LNA behind an external filter.
A key design consideration is that the MMG20271HT1 must be biased from +5 V through an external RF choke or bias-tee network on both RF pins, with DC-blocking capacitors on the RF signal paths. Adequate ground vias under the exposed pad are essential for stable operation and thermal performance.
ドロップイン代替品: MMG20271HT1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MMG20271H
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MMG20271HT1G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MMA20312B
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MMA25312B
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MMG20271HT1 最大定格＆電気的特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Device Type | Low Noise / General Purpose Amplifier MMIC |
| Technology | Enhancement Mode pHEMT (E-pHEMT), GaAs |
| Frequency Range | 1500 MHz to 2700 MHz |
| Small-Signal Gain | 16 dB (typical) |
| Minimum Gain | 13.4 dB |
| Output P1dB | 27.5 dBm |
| 電源電圧 | +5 V (typical) |
| 電源電流 | 227 mA (maximum) |
| パッケージ | 12-QFN 3x3 mm (LCC12, 0.5 mm pitch) |
| 動作温度 | -40C to +85C |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant |
| Input / Output Matching | Internal 50-ohm (typical) |
MMG20271HT1 ピン構成
| ピン 1 | NC — Not connected (per datasheet) |
| ピン 2 | GND — Ground |
| ピン 3 | RF_IN — RF input, 50 ohm nominal |
| ピン 4 | GND — Ground |
| ピン 5 | NC — Not connected (per datasheet) |
| ピン 6 | GND — Ground |
| ピン 7 | RF_OUT / VDD — RF output and DC supply, 50 ohm nominal |
| ピン 8 | GND — Ground |
| ピン 9 | NC — Not connected (per datasheet) |
| ピン 10 | GND — Ground |
| ピン 11 | NC — Not connected (per datasheet) |
| ピン 12 | GND — Ground |
| ピン EP | GND / DAP — Exposed die-attached paddle - primary RF ground and thermal path, must be soldered to PCB ground plane with multiple vias |
主な用途
MMG20271HT1 の用途: 6 件s: Cellular Base Station Receiver LNA, W-CDMA / TD-SCDMA Driver Amplifier, WLAN 2.4 GHz ISM Front-End, LTE Small-Cell / Femtocell Gain Block, Repeater / DAS Bidirectional Amplifier, Industrial / IoT Wireless Sensor Front-End.
Cellular Base Station Receiver LNA
The MMG20271HT1's 16 dB gain and 1500-2700 MHz coverage make it a strong first-stage LNA for cellular base-station receivers. With high OIP3 supporting LTE peak-to-average ratios, it preserves sensitivity while delivering the linearity margin needed for full-band operation. Place the device between the antenna filter and the downconverting mixer, biasing from a clean +5 V rail; the integrated 50-ohm matching minimizes external component count. Cascaded noise figure is dominated by this stage, so its low NF directly sets receiver floor.
おすすめ
W-CDMA / TD-SCDMA Driver Amplifier
Used as a transmit driver, the MMG20271HT1's 27.5 dBm P1dB provides enough headroom to drive a follow-on 1-2 W PA in W-CDMA and TD-SCDMA base-station transmit chains. Its high OIP3 minimizes ACPR regrowth on wideband CDMA signals with their high peak-to-average ratios. Place between the upconverter and the final PA, with an inter-stage attenuator if gain trim is required. The internal bias network simplifies the supply rail to a single +5 V feed through a bias-tee.
おすすめ
WLAN 2.4 GHz ISM Front-End
In the 2.4 GHz ISM band the MMG20271HT1 provides the gain and linearity needed for 802.11b/g/n/ac front-ends in access points, repeaters, and consumer WLAN equipment. Its 16 dB gain boosts the receiver chain without pushing the front-end into compression when strong interferers are present. Place after the 2.4 GHz bandpass filter and before the LNA/mixer pair; the internal matching allows a simple 50-ohm microstrip interface to the surrounding circuitry.
おすすめ
LTE Small-Cell / Femtocell Gain Block
Small-cell and femtocell radios benefit from a compact, surface-mount LNA / GPA and the MMG20271HT1's 3x3 mm QFN enables dense PCB designs. With 16 dB gain and high OIP3, it serves as either receiver LNA or transmit driver inside small-cell radio units, picocells, and enterprise femtocells covering LTE bands in the 1.5-2.7 GHz range. The small outline plus single +5 V supply make thermal management straightforward at small-cell output levels.
おすすめ
Repeater / DAS Bidirectional Amplifier
Distributed antenna systems and cellular repeaters use the MMG20271HT1 in both the uplink and downlink paths. As a downlink amplifier it boosts the signal coming from the base station toward the antennas, and as an uplink amplifier it boosts the mobile-device signal back toward the base station. The 27.5 dBm P1dB and high OIP3 preserve signal fidelity across many simultaneous users, while the 3x3 QFN package allows tight PCB layouts in space-constrained repeater enclosures.
おすすめ
Industrial / IoT Wireless Sensor Front-End
Industrial IoT gateways and wireless sensor networks operating in the 2.4 GHz ISM or sub-2.7 GHz cellular bands use the MMG20232HT1 (note: similar family member) or MMG20271HT1 as a low-noise front-end. The combination of low noise figure, 16 dB gain, and single +5 V supply suits battery-backed industrial radios that need extended range and reliability. Bias it from a regulated LDO rail for best phase-noise performance, and use a bandpass filter in front to reject out-of-band interferers common in industrial environments.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MMG20271HT1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MMG20271H | MMG20271HT1G | MMA20312B | MMA25312B |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | 12-QFN 3x3 mm | 12-QFN 3x3 mm - same | 12-QFN 3x3 mm - same | 12-QFN 3x3 mm - same family footprint | 12-QFN 3x3 mm - same family footprint |
| Technology | E-pHEMT (GaAs) | E-pHEMT (GaAs) | E-pHEMT (GaAs) | pHEMT family (NXP) | pHEMT family (NXP) |
主な差別化要因
- Dual-use LNA / GPA in a single device （vs MMG20271H (same die, tube packaging))
- Integrated 50-ohm matching simplifies board design （vs MMA20312B (different NXP family member))
- Single +5 V supply with internal active bias regulation （vs MMG20271H (same family))
設計ノート
Estimated: at 5 V supply and 227 mA maximum quiescent current, the device can dissipate up to ~1.1 W. The QFN 3x3 exposed die-attached paddle must be soldered directly to a continuous PCB ground plane with a via array (typically 4-9 thermal vias, 0.3 mm drill, 0.5 mm pitch) directly under the package to keep junction temperature within ratings. Avoid signal traces under the paddle.
RF input and output traces must be 50 ohm controlled-impedance microstrip or coplanar waveguide with ground (CPWG) over the top ground layer. Keep RF traces away from the DC bias feed traces to prevent coupling; place DC-blocking capacitors on RF_IN and RF_OUT pins as close to the package as possible. Use a high-Q RF choke (typically 100 nH to 1 uH, self-resonant above 2.7 GHz) on the VDD pin.
Do not bias the MMG20271HT1 from a noisy switching regulator; supply ripple degrades OIP3 and ACPR. Use a linear LDO or filtered switching regulator with at least 20 dB of ripple rejection at the switching frequency. Always sequence VDD before applying RF input power to avoid damage from partially-biased operation. Do not exceed the absolute maximum ratings on input RF power.
コンプライアンス情報
RoHS compliant per NXP product page and DigiKey listings. Not AEC-Q100 qualified - this is a base-station / infrastructure RF part, not an automotive grade. Lead-free plating supports 260C peak reflow per IPC/JEDEC J-STD-020.
