MRF18030ALSR5 - 30W RF Power MOSFET 1.81-1.88GHz | NXP
部品番号: MRF18030ALSR5 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $130.5 | $1,305.00 |
| 100 | $117 | $11,700.00 |
| 500 | $105 | $52,500.00 |
| 1,000 | $95 | $95,000.00 |
MRF18030ALSR5 概要
An RF power MOSFET (metal-oxide-semiconductor field-effect transistor) is a discrete transistor optimized for high-frequency, high-power amplification in the radio-frequency spectrum (typically 1 MHz to 6 GHz). It belongs to the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> RF MOSFETs, and is purpose-built for use as the final or driver stage in base-station, broadcast, and industrial RF power amplifiers where conventional low-frequency MOSFETs would fail to deliver usable gain at microwave frequencies.
The MRF18030ALSR5 features NXP's laterally-diffused metal-oxide-semiconductor (LDMOS) technology, which is the industry-standard device architecture for cellular base-station power amplifiers thanks to its excellent thermal stability, high gain, and broadband characteristics. Key differentiating specifications include 30 W CW output power, 14 dB gain, and operation across the full 1.81 GHz to 1.88 GHz DCS-1800/PCS-1900 transmit band. Its integrated ESD protection and wideband matching capability reduce the need for external protection circuitry.
Architecturally, the device uses an enhanced-mode LDMOS FET with an internal input matching network and is designed for class-AB linear amplification. The flanged NI-400S air-cavity package provides a low thermal resistance path and is mechanically compatible with industry-standard RF power transistor mounting holes, allowing direct bolt-down assembly onto machined heatsinks. Per the manufacturer datasheet, the part is rated for 65 V maximum drain-source voltage and exhibits typical power-added efficiency in the 30-35% range at full output.
Typical applications include DCS-1800 base-station final-stage power amplifiers, PCS-1900 cellular infrastructure drivers, and broadband RF power blocks in industrial scientific-medical (ISM) equipment operating in the adjacent 1.8 GHz spectrum. The wide frequency coverage makes it suitable as well for repeaters, microcells, and picocell radio units.
When designing with this part, ensure the heatsink thermal design holds the flange temperature below the maximum rated value under worst-case load VSWR conditions. Adequate RF input and output matching networks are essential to realize the rated 14 dB gain and to maintain linearity in class-AB operation.
This page consolidates distributor stock, parameter-level alternatives, and practical design notes so an RF design engineer can evaluate the MRF18030ALSR5 against drop-in substitutes before committing a PCB layout.
ドロップイン代替品: MRF18030ALSR5 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MRF18030BLSR5
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF18030ALR5
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF18060AS
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF18090AS
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF18030ALSR5 最大定格＆電気的特性
| Manufacturer | NXP USA Inc. |
| Product Type | RF Power MOSFET (LDMOS) |
| Drain-Source Voltage (Vdss) Max | 65 V |
| Operating Drain Voltage | 26 V |
| Current Rating | 250 mA (test condition, DigiKey listing) |
| Output Power (Pout) | 30 W |
| Power Gain (Gps) | 14 dB |
| Frequency Range | 1.81 GHz to 1.88 GHz |
| パッケージ / ケース | NI-400S |
| 実装タイプ | Chassis Mount (flanged) |
| Technology | LDMOS |
| Configuration | Single |
| Lead Free | Yes |
| RoHS ステータス | Compliant |
| Channel Type | N-Channel |
MRF18030ALSR5 ピン構成
| ピン 1 | DRAIN — RF output / drain (flange also serves as thermal path) |
| ピン 2 | GATE — RF input / gate bias |
| ピン 3 | SOURCE — Source (grounded through flange) |
安全動作領域 - DC
主な用途
MRF18030ALSR5 の用途: 6 件s: DCS-1800 Base-Station Final-Stage Power Amplifier, PCS-1900 Cellular Infrastructure Driver Amplifier, Industrial Scientific Medical (ISM) 1.8 GHz Power Block, Repeater and Microcell RF Power Amplifier, Broadband Linear RF Amplifier Block, Aerospace and Defense RF Power Stage.
DCS-1800 Base-Station Final-Stage Power Amplifier
The MRF18030ALSR5's 30 W output rating, 14 dB gain, and 1.81-1.88 GHz operating band align precisely with DCS-1800 base-station final-stage requirements, where the linear output power per carrier typically falls in the 20-30 W range. The LDMOS technology delivers the wideband linearity needed to support multi-carrier GSM/EDGE modulation while remaining stable under load-VSWR stress. Placed as the final PA after a driver stage and circulator, the part provides the rated Pout with PAE in the 30-35% range; unlike a GaAs device, the LDMOS architecture tolerates the 26 V drain rail directly from a switching supply without an extra bias regulator.
おすすめ
PCS-1900 Cellular Infrastructure Driver Amplifier
In PCS-1900 cellular infrastructure, the MRF18030ALSR5 functions as a high-linearity driver stage preceding a higher-power final PA. The 14 dB gain raises a 100 mW driver signal to the multi-watt range, and the 65 V Vdss rating provides ample headroom for the inductive kick encountered under pulsed linear operation. The flanged NI-400S package bolts directly to the sector amplifier chassis, sharing the thermal management with adjacent finals; compared with a plastic-packaged RF transistor, the air-cavity ceramic NI-400S gives lower junction-to-flange thermal resistance, which directly improves MTBF under continuous downlink traffic.
おすすめ
Industrial Scientific Medical (ISM) 1.8 GHz Power Block
ISM-band equipment operating in the 1.8 GHz spectrum benefits from the MRF18030ALSR5's broadband matching tolerance. The 30 W output and 26 V drain operation are well-matched to industrial microwave sources such as plasma generators, RF drying systems, and particle accelerators, where continuous-wave (CW) power and stable gain take priority over cellular-specific linearity. With proper output filtering the device can deliver the full rated Pout into industrial loads; the rugged LDMOS construction tolerates the load mismatches common in these environments far better than bipolar RF transistors.
おすすめ
Repeater and Microcell RF Power Amplifier
Distributed antenna systems, indoor repeaters, and picocell radio units typically require 5-30 W of RF output per carrier - exactly the envelope addressed by the MRF18030ALSR5. Its 14 dB gain reduces the required drive level and the size of the preceding gain block, while the compact NI-400S package allows dense PCB layouts in space-constrained indoor hardware. The LDMOS device linearity supports modern OFDM-based LTE signals without external digital predistortion, although DPD can still be applied to improve efficiency further at backed-off operating points.
おすすめ
Broadband Linear RF Amplifier Block
The MRF18030ALSR5's flat gain response across the 1.81-1.88 GHz window makes it suitable as a generic 30 W linear amplifier building block in broadband RF chains. Used with a calibrated external matching network, the device can support laboratory-grade instrumentation and general-purpose RF power stages where predictable gain and high ruggedness under VSWR are required. Designers typically add a feedback network around the source lead to flatten gain and to control stability when driving reactive loads; the result is a stable, broadband amplifier block with a wide safety margin.
おすすめ
Aerospace and Defense RF Power Stage
Aerospace and defense applications operating in the 1.8 GHz band - including tactical radios, secure communications uplinks, and electronic-countermeasure transmitters - benefit from the MRF18030ALSR5's 65 V Vdss rating, 14 dB gain, and rugged LDMOS construction. The flanged ceramic NI-400S package is mechanically robust under vibration and thermal-cycling environments, and the part's track record in cellular infrastructure provides a known reliability database. Designers should evaluate the part against the specific MIL-STD or aerospace qualification requirements of their program, as the standard MRF18030ALSR5 is not explicitly MIL-qualified per the NXP datasheet.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF18030ALSR5 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF18030BLSR5 | MRF18030ALR5 | MRF18060AS | MRF18090AS |
|---|---|---|---|---|---|
| Package | NI-400S | NI-400S-2 - same | NI-400S - same | NI-400S-2 - same | NI-400S-2 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout) | 30 W | 30 W | 30 W | 60 W | 90 W |
| Operating Frequency | 1.81 GHz to 1.88 GHz | 1.81 GHz to 1.88 GHz | 1.81 GHz to 1.88 GHz | 1.80 GHz to 2.00 GHz (broader) | 1.80 GHz to 2.00 GHz (broader) |
| Power Gain (Gps) | 14 dB | 14 dB | 14 dB | 12 dB | 12 dB |
| Drain-Source Voltage Max | 65 V | 65 V | 65 V | 65 V | 65 V |
| Operating Drain Voltage | 26 V | 26 V | 26 V | 26 V to 28 V | 26 V to 28 V |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant |
主な差別化要因
- Best-in-class gain for 30 W DCS/PCS band （vs MRF18060AS)
- Tight band specialization vs broader competitors （vs MRF18090AS)
- Lower quiescent dissipation at idle （vs MRF18030BLSR5)
設計ノート
At 30 W RF output and 30% PAE, the MRF18030ALSR5 dissipates roughly 70 W DC input - 30 W RF = 40 W heat into the heatsink. The NI-400S flanged package provides a low thermal-resistance path to the heatsink; keep the flange mounting flatness below 0.05 mm and apply the manufacturer-specified torque (typically 1.5-2.0 N.m) to maintain the rated junction-to-flange thermal resistance. Estimated: with theta_JC = 0.5 C/W and 40 W dissipation, the junction-to-flange temperature rise is approximately 20 C.
Place the input and output matching networks on low-loss RF substrate (Rogers RO4003C or equivalent) and keep the gate lead as short as possible to minimize series inductance. Use a 50 ohm microstrip transmission line with a via fence stitching for the source-lead ground return. The drain bias feed should be decoupled with a 10 uF electrolytic plus 1 nF and 100 pF ceramic capacitors in parallel, placed as close as physically possible to the drain pad.
Do not exceed the 65 V Vdss rating under any transient condition - including load-VSWR-induced overshoot. Add a gate clamping network (typically a reverse-biased Schottky diode pair) to limit the off-state gate voltage swing below the +/- 20 V gate breakdown. Also ensure the drain supply ramps up after the gate bias to avoid partial-turn-on that would create high transient dissipation and potentially exceed SOA limits.
コンプライアンス情報
RoHS and lead-free per distributor listings and NXP product page. Not AEC-Q100 qualified - this is an RF power transistor not an automotive IC. Halogen-free status not stated in the provided data.
