MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP
部品番号: MRF5S19060NR1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $28.5 | $28.50 |
| 10 | $25.6 | $256.00 |
| 100 | $22.75 | $2,275.00 |
| 500 | $20.1 | $10,050.00 |
| 1,000 | $17.95 | $17,950.00 |
MRF5S19060NR1 概要
An RF power LDMOS transistor is a specialized MOSFET structure built on a laterally-diffused metal-oxide-semiconductor process. LDMOS devices combine high breakdown voltage, excellent thermal performance, and good RF gain, making them the dominant technology for base-station power amplifiers, broadcast transmitters, and industrial RF heating systems. Within the RF semiconductor hierarchy, the MRF5S19060NR1 sits between small-signal RF transistors and high-power vacuum tubes, occupying the 10-100 W average output power class used in cellular infrastructure.
Key features include 14 dB typical gain at 1.99 GHz, broadband performance across the 1930-1990 MHz PCS/DCS band, integrated ESD protection, and a thermally-enhanced plastic package with a low thermal resistance to the flange. The high gain and broadband matching characteristics reduce the number of driver stages required in the amplifier chain, simplifying overall transmitter design.
The device uses NXP's high-voltage LDMOS process technology optimized for 28 V operation. The lateral structure provides inherent robustness against load mismatch (high VSWR) and allows single-ended common-source amplifier topologies. Internal matching networks reduce external component count and improve gain flatness across the operating band.
Typical applications include 1930-1990 MHz PCS/DCS base station power amplifiers, W-CDMA and TD-SCDMA driver stages, industrial RF heating equipment, and broadband commercial transmitters. Its broadband matching makes it especially suitable for multi-carrier and software-defined radio platforms where the amplifier must cover a wide instantaneous bandwidth without retuning.
Designers should provide adequate RF chassis decoupling on the drain supply and follow NXP's reference design for input/output matching. A properly heat-sunk flange mount is essential to maintain junction temperature below the 200 C rating under continuous CW or high-duty-cycle operation.
This page synthesizes verified distributor pricing, drop-in alternatives from the same NXP RF power family, and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: MRF5S19060NR1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MRF5S19060NR1 （同一形状・フットプリント） — 相違点: Transistor Type, Package, Output Power (Average), Configuration, Frequency Band.
クイック比較ツール — 並列比較する代替部品を選択:
MRF5S19060NBR1
✅ ドロップイン✓ 在庫あり
$25.4 / 個
データシートを見る →MRF5S19060NR1
✅ ドロップイン✓ 在庫あり
$17.95 / 個
データシートを見る →MRF5S19060NR1 仕様
| トランジスタタイプ | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1930 MHz to 1990 MHz |
| Output Power (Average) | 12 W |
| Typical Gain | 14 dB at 1.99 GHz |
| Drain-Source Voltage (Rated) | 65 V |
| Test Supply Voltage | 28 V |
| Test Quiescent Current | 750 mA |
| パッケージ / ケース | TO-270 WB-4 (over-molded plastic, 4-lead) |
| 実装スタイル | Surface Mount |
| Configuration | Single, Common-Source |
| Application | Base station / broadband commercial amplifier |
| ピン数 | 5 |
| RoHS ステータス | Compliant |
| Lead Free Status | Lead Free |
| Operating Mode | Class AB (typical RF PA) |
MRF5S19060NR1 ピン構成
| ピン 1 | Drain — Drain terminal - RF output, DC supply |
| ピン 2 | Gate — Gate terminal - DC bias and RF input |
| ピン 3 | Source — Source terminal - typically connected to ground flange |
| ピン 4 | NC — Not connected (per datasheet) |
| ピン 5 | Flange — Mounting flange / thermal pad - ground reference |
DC 安全動作領域 (estimated, per datasheet limits)
主な用途
MRF5S19060NR1 の用途: 6 件s: PCS / DCS 1900 MHz Base Station Power Amplifier, W-CDMA / TD-SCDMA Driver Stage, Industrial RF Heating and Drying Equipment, Broadband Commercial Transmitter Final Stage, RF Front-End Driver for Repeater / Booster, Test & Measurement RF Power Source.
PCS / DCS 1900 MHz Base Station Power Amplifier
The MRF5S19060NR1's 12 W average output power, 14 dB gain, and 1930-1990 MHz broadband matching make it ideal for the final or driver PA stage of macro-cell PCS / DCS-1900 base stations. Placed in a 50-ohm common-source Class AB configuration with input/output microstrip matching on a low-loss RF substrate, it delivers clean W-CDMA, TD-SCDMA, and multi-carrier GSM/EDGE amplification at 28 V. Compared with discrete smaller-signal MOSFETs, the integrated device halves the driver-stage count and improves overall PA efficiency at backed-off output levels typical of cellular traffic.
おすすめ
W-CDMA / TD-SCDMA Driver Stage
In W-CDMA and TD-SCDMA transmitters, the MRF5S19060NR1 serves as a high-gain driver preceding the final high-power LDMOS or GaN stage. Its 14 dB gain compensates for the conversion loss of feed-forward cancellation loops and reduces the number of pre-driver MMICs required. Operating from a regulated 28 V rail with 750 mA quiescent current, it maintains linearity well within 3GPP ACLR specifications for modulated signals, ensuring spectrum mask compliance at the antenna output.
おすすめ
Industrial RF Heating and Drying Equipment
Industrial RF heating systems operating in the 1.9 MHz ISM-derived band (or licensed extensions around 1990 MHz) benefit from the MRF5S19060NR1's 12 W average power and high ruggedness against load mismatch. The LDMOS structure tolerates VSWR up to 10:1 at all phase angles without destructive failure, which is critical in unpredictable heating loads. Mounted on a copper or aluminum heat spreader, it can sustain continuous CW operation driving applicator cavities for plastics welding, food drying, or textile processing.
おすすめ
Broadband Commercial Transmitter Final Stage
Software-defined radio and multi-carrier commercial transmitters require amplifiers with flat gain across wide instantaneous bandwidth. The MRF5S19060NR1's broadband 60 MHz match without retuning simplifies the signal-chain design and supports carrier aggregation schemes. With 28 V operation and 12 W average output, it can drive a single antenna or feed a low-loss combiner for sectorized coverage in private LTE / 5G NR small-cell deployments.
おすすめ
RF Front-End Driver for Repeater / Booster
Cellular signal boosters and digital repeaters require linear, broadband RF driver stages. The MRF5S19060NR1, with 14 dB gain and broadband PCS/DCS match, drives the final PA in low-to-medium-power repeater units deployed indoors or in tunnels. Its small TO-270 WB-4 footprint allows compact PCB layouts where space is constrained, and the surface-mount package supports automated assembly for volume production.
おすすめ
Test & Measurement RF Power Source
In laboratory test equipment, the MRF5S19060NR1 acts as a calibrated CW or modulated RF source for characterizing filters, antennas, and receivers at 1.9-2.0 GHz. Its 12 W power handles most passive-component intermodulation tests, and the broadband match allows sweep-frequency characterization without external tuner networks. The 28 V / 750 mA bias condition is straightforward to implement on a bench supply, simplifying integration into automated test fixtures.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF5S19060NR1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF5S19060NBR1 | MRF5S19060NR1 |
|---|---|---|---|
| Package | TO-270 WB-4 | TO-270 WB-4 (same) | TO-270 WB-4 (same) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Average) | 12 W | 12 W | 12 W |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz |
| Typical Gain | 14 dB | 14 dB | 14 dB |
| Test Voltage | 28 V | 28 V | 28 V |
| Test Quiescent Current | 750 mA | 750 mA | 750 mA |
| Drain-Source Voltage (Rated) | 65 V | 65 V | 65 V |
| Packing Format | Tape & Reel (R1) | Bulk pack | Tape & Reel (R1) |
主な差別化要因
- Highest 14 dB gain in the 1930-1990 MHz band for 12 W class （vs MRF5S19060NBR1)
- Factory tape-and-reel packing for SMT automation （vs MRF5S19060NBR1)
- NXP-specific TO-270 WB-4 over-molded plastic package （vs MRF5S19060MR1 (TO-270-2))
設計ノート
Estimated: at 28 V Vdd, 750 mA quiescent, and 12 W average RF output, the device dissipates roughly 9 W of DC power with about 9 W of RF output, for net DC power dissipation near 18 W minus RF output. Mount the flange on a copper or aluminum spreader with thermal compound, sized so that case temperature stays below 70 C in worst-case ambient. The TO-270 WB-4 over-molded plastic package relies on the PCB copper pad as part of the heat path, so use thermal vias under the flange pad.
Use a low-loss RF substrate (Rogers RO4003C or RO4350B recommended for 1.9 GHz) for the matching networks. Place input and output microstrip lines on the top metal layer with a continuous ground plane on layer 2. Decouple the 28 V drain supply with a 10 uF tantalum bulk capacitor, a 100 nF ceramic, and a 10 nF feed-through cap placed within 5 mm of the drain pin. Keep gate bias traces narrow and away from drain RF traces to avoid feedback oscillation.
Do not exceed 65 V on the drain terminal; transient spikes from an unregulated supply can destroy the LDMOS die. Always gate-bias the device before applying drain voltage to avoid thermal runaway at zero quiescent current. Match the input network for the actual operating frequency (1930-1990 MHz) rather than using a broadband match that may reduce gain flatness. Verify VSWR under worst-case load - the device is rugged but sustained 10:1 mismatch will reduce MTTF significantly.
コンプライアンス情報
RoHS and lead-free status confirmed by NXP product family datasheet. Halogen-free status not explicitly listed in the provided web data and is marked as unknown. AEC-Q100 not applicable - this is an RF power transistor, not an automotive-qualified IC.
