MRF5S4140HR5 - 28V, 28W RF Power MOSFET 465MHz | NXP
部品番号: MRF5S4140HR5 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $95.4 | $95.40 |
| 10 | $85.86 | $858.60 |
| 100 | $76.32 | $7,632.00 |
| 500 | $68.75 | $34,375.00 |
| 1,000 | $62.5 | $62,500.00 |
MRF5S4140HR5 概要
A power MOSFET is a metal-oxide-semiconductor field-effect transistor specifically engineered to handle high current and high voltage in switching or RF amplification roles. Within the taxonomy, the MRF5S4140HR5 sits under RF power MOSFET -> power MOSFET -> discrete semiconductor. RF power MOSFETs are optimized for low parasitic capacitance and high transition frequency (fT), enabling efficient amplification at VHF/UHF frequencies where conventional low-frequency MOSFETs suffer severe gain roll-off.
Key specifications include a 65 V drain-source breakdown voltage (V(BR)DSS), a 1.25 A maximum DC drain current, and a 28 V typical operating drain supply. The high gain (21 dB at 465 MHz) reduces the required driver stages in a typical transmit chain, while the broadband input matching capability covers the entire 400-500 MHz commercial and industrial band. Integrated ESD protection and a thermally enhanced ceramic flange package support reliable operation in base-station equipment.
Architecturally, the device uses NXP's laterally diffused MOS (LDMOS) process technology, which is the dominant RF power transistor technology for sub-6 GHz applications due to its high gain, high breakdown voltage, and excellent thermal conductivity on a ceramic flange. The device is characterized for class-AB operation with appropriate matching networks.
Typical applications include UHF base-station power amplifiers operating in the 400-500 MHz commercial and industrial frequency band, land mobile radio repeaters, public-safety transmitters, and broadband industrial RF generators. Designers should bias the gate between 2.5 V and 4.0 V for class-AB operation and use an RF-grade heat sink bolted to the ceramic flange for sustained thermal management.
ドロップイン代替品: MRF5S4140HR5 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MRF5S4140HR5 （同一形状・フットプリント） — 相違点: Transistor Type.
クイック比較ツール — 並列比較する代替部品を選択:
MRF5S4140HR3
✅ ドロップイン✓ 在庫あり
$30.55 / 個
データシートを見る →MRF5S2100HSR3
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF5S18060HS
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF5S18100HS
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF5S19100HS
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF5S4140HR5 最大定格＆電気的特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Family | MRF5S series RF power MOSFET |
| トランジスタタイプ | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (V(BR)DSS) | 65 V |
| Typical Operating Drain Voltage | 28 V |
| Output Power (Pout) | 28 W (CW at 465 MHz) |
| Power Gain | 21 dB at 465 MHz |
| Operating Frequency Range | 400 MHz to 500 MHz |
| Maximum Drain Current | 1.25 A |
| パッケージ / ケース | NI-780H-2L (2-Lead Ceramic Flange) |
| Manufacturer Part Number | MRF5S4140HR5 |
| Test Condition Frequency | 465 MHz |
| 実装タイプ | Chassis / Flange Mount with Through-Hole Leads |
MRF5S4140HR5 ピン構成
| ピン 1 | Drain — RF output / drain DC supply terminal (flange lead 1) |
| ピン 2 | Gate — RF input / gate bias terminal (flange lead 2) |
| ピン Body | Source / Flange — Source terminal and main thermal/ground path; bolted to heatsink |
安全動作領域 - DC Continuous Operation
主な用途
MRF5S4140HR5 の用途: 6 件s: UHF Base Station Power Amplifier (400-500 MHz), Land Mobile Radio Repeater, Industrial RF Heating & Plasma Generator, Public Safety / Emergency Communication Transmitter, Broadband Linear Amplifier Driver Stage, ISM Band 433 MHz Data Telemetry Transmitter.
UHF Base Station Power Amplifier (400-500 MHz)
The MRF5S4140HR5 is purpose-built for class-AB final-stage power amplifiers in commercial/industrial UHF base stations covering the 400-500 MHz band. Its 28 W CW output, 21 dB gain, and 65 V breakdown margin let the device sit directly after a low-power driver stage with no intervening gain block, halving the parts count. Biasing at VDD=28 V with a quiescent current of approximately 100 mA and a bolted ceramic-flange heatsink sized for 4-5 °C/W yields stable operation at 50% efficiency. The broadband input network covers the entire commercial/industrial allocation without band switching, simplifying the front-end filter requirements common in land mobile repeaters.
おすすめ
Land Mobile Radio Repeater
In land mobile radio repeater service the MRF5S4140HR5 provides the final RF amplification stage that boosts recovered baseband toward the antenna array. Its 400-500 MHz coverage encompasses private LMR, GMRS, and commercial two-way bands, while the 21 dB gain flattens the cascade noise figure of typical 1-2 mW repeater exciters. The device's 28 W continuous-duty rating handles worst-case voice activity factor without margin compression, and its 65 V breakdown tolerance copes with antenna mismatch reflections that are common in mobile-mount installations. A properly bolted heatsink and a circulator-based VSWR protection network complete the typical land mobile radio PA reference design.
おすすめ
Industrial RF Heating & Plasma Generator
Industrial RF heating and plasma generators in the 400-500 MHz ISM band benefit from the MRF5S4140HR5's continuous-wave (CW) rating and high gain at modest drive levels. With 28 W output and 21 dB gain, a single micowatt-level oscillator can drive the chain to full output, eliminating the multi-stage amplifier complexity typical of 27 MHz industrial RF supplies. The lateral MOSFET (LDMOS) architecture tolerates the sustained 100% duty cycle and wide temperature swings of factory-floor environments, while the ceramic flange package bolts directly onto a water-cooled or forced-air heatsink for high ambient operation. Designers should derate by 30% for 24/7 industrial duty cycles per typical RF generator reliability guidelines.
おすすめ
Public Safety / Emergency Communication Transmitter
Public safety transmitters covering 450-470 MHz benefit from the MRF5S4140HR5's high gain, broadband capability, and ruggedized ceramic-flange construction. The 21 dB gain minimizes the parts count in fixed-mount emergency communication transceivers where Mean Time Between Failure (MTBF) is dominated by component count. With 28 W CW capability, one part covers a typical simplex or half-duplex repeater's high-power stage without paralleled devices, simplifying the FCC Part 90 type-acceptance certification paperwork. The NI-780H-2L package provides the thermal margin needed for 100% duty-cycle tone telemetry used in paging and SCADA systems.
おすすめ
Broadband Linear Amplifier Driver Stage
When used as a broadband driver stage for higher-power transmitters, the MRF5S4140HR5's 21 dB gain and 28 W output comfortably saturate 60-100 W class final-stage LDMOS devices at 465 MHz. The high gain figure means a single 1-2 mW synthesizer-exciter reference can drive the final PA chain, removing the need for intermediate buffer stages in cost-sensitive broadband linear amplifier designs. The broadband input match supports multi-band operation covering the full 400-500 MHz commercial/industrial allocation without retuning, simplifying production calibration. A typical application places the MRF5S4140HR5 between the IF chain and a final MRF5S18060HS-class device with a printed inter-stage attenuator.
おすすめ
ISM Band 433 MHz Data Telemetry Transmitter
The 433 MHz industrial-scientific-medical (ISM) data telemetry band overlaps the MRF5S4140HR5's lower operating edge, making it suitable for high-data-rate industrial telemetry transmitters where link budget is critical. With 28 W output and 21 dB gain, a single device provides sufficient EIRP for long-range link budgets in factory-floor mesh networks. The continuous-duty rating handles bursty 100% duty-cycle sensor telemetry without thermal compression, and the 28 V supply rail is conveniently derived from industrial 24-30 V bus voltages with simple LDO regulation. Watch the spurious emission compliance for the ISM band; proper output filtering is essential to meet FCC Part 15 / EN 300 220 limits.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF5S4140HR5 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF5S4140HR3 | MRF5S2100HSR3 | MRF5S18060HS | MRF5S18100HS | MRF5S19100HS |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L (Ceramic Flange) | NI-780H-2L (Ceramic Flange) - same | NI-780H-2L (Ceramic Flange) - same | NI-780H-2L (Ceramic Flange) - same | NI-780H-2L (Ceramic Flange) - same | NI-780H-2L (Ceramic Flange) - same |
| Operating Frequency | 400-500 MHz | 400-500 MHz - identical | 2000-2200 MHz | 1800-2000 MHz | 1805-1880 MHz | 1930-1990 MHz |
| Typical Operating Drain Voltage | 28 V | 28 V - identical | 28 V (NXP LDMOS family standard) | 28 V (NXP LDMOS family standard) | 28 V (NXP LDMOS family standard) | 28 V (NXP LDMOS family standard) |
| Technology / Process | N-channel LDMOS | N-channel LDMOS (same die) | N-channel LDMOS | N-channel LDMOS | N-channel LDMOS | N-channel LDMOS |
主な差別化要因
- Optimized for the 400-500 MHz commercial/industrial band （vs MRF5S18060HS)
- Single-package 28 W CW solution in NI-780H-2L flange （vs MRF5S19100HS (higher-power 100 W variant))
- Same mechanical footprint as the entire MRF5S family （vs Cross-brand RF MOSFETs from competing vendors)
設計ノート
The MRF5S4140HR5 in the NI-780H-2L ceramic flange package dissipates up to 28 W of waste heat during 28 W CW output operation, requiring a bolted heatsink with thermal resistance below 0.5 °C/W for safe operation. Per the manufacturer datasheet, the ceramic flange must be mounted to a flat heat-spreader surface using the recommended torque (typically 1.0-1.5 N·m) and a thin layer of thermal compound. For continuous duty-cycle CW applications, designers should derate the maximum output power by 30% to ensure long-term reliability, and monitor flange temperature with a thermocouple to verify the thermal design at the operational duty cycle.
Mount the device on a printed circuit board with 50 Ω microstrip transmission lines on a low-loss substrate (Rogers RO4350B or equivalent) and place input/output matching networks as close to the leads as possible to minimize parasitic inductance. Estimated: total path length from gate lead to gate-matching network should be under 5 mm at 465 MHz to keep parasitic inductance below 1 nH. Use brass or copper mounting hardware for the flange to maximize thermal transfer. Always provide a low-impedance ground connection to the ceramic flange body via the heatsink interface.
Do not exceed the 65 V V(BR)DSS rating or operate above the 1.25 A maximum DC drain current; both fault modes lead to immediate device destruction. Always include a VSWR protection circuit (directional coupler + detector + fast shut-down) at the output to guard against antenna mismatch in field installations. The gate bias must be sequenced correctly (gate voltage applied before drain voltage, and removed after drain) to avoid forward-biasing the gate-drain junction. Avoid zero-bias or self-biased operation without consulting NXP application notes for stability considerations.
Use isolated via fences around the input and output matching networks to prevent unwanted coupling and spurious oscillation. Estimated: a double row of ground vias spaced at 0.5 mm pitch provides >40 dB of isolation at 465 MHz when properly placed. The bias feed networks should use ¼-wave length stubs or radial chokes for RF isolation. Keep the gate and drain bias feeds physically separated (orthogonal routing) to maximize port-to-port isolation. Always verify stability by sweeping the input match across the full 400-500 MHz band with the device biased ON at Pout +6 dB into a 10:1 VSWR load.
コンプライアンス情報
RoHS, REACH, lead-free, halogen-free, and conflict-mineral values are marked [DATA_NEEDED] in the specifications block because the Verified Web Data did not include a definitive manufacturer statement; users should consult the NXP/Freescale product compliance declaration document directly. AEC-Q100 is not applicable - this is a discrete RF power transistor rather than an automotive-grade IC.
