MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
部品番号: MRF6S9045NBR1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $17.2 | $172.00 |
| 100 | $15.4 | $1,540.00 |
| 500 | $13.85 | $6,925.00 |
| 1,000 | $12.1 | $12,100.00 |
MRF6S9045NBR1 概要
An RF power MOSFET is a lateral DMOS device engineered to deliver high RF output power with high gain and efficiency at a specified frequency band, replacing older bipolar transistors in base-station power amplifiers. Its role in the system hierarchy is: RF power transistor → power amplifier (PA) → transceiver RF front-end → base-station subsystem. Lateral MOSFETs offer higher gain-bandwidth product, lower feedback capacitance, and easier broadband matching than bipolar parts, at the cost of higher on-resistance per unit area.
Key features include a 68 V minimum drain-source breakdown voltage, 350 mA quiescent drain current, 22.7 dB typical power gain at 880 MHz, and 175 W absolute maximum power dissipation. The enhancement-mode gate structure simplifies bias circuits (no negative gate supply required) and the ceramic NI-880 package provides a low thermal resistance path from die to heatsink, essential for sustained CW and pulsed-CDMA operation. The device is internally input-matched for the 800-1000 MHz band, reducing external component count on the demo board.
Typical applications include 880 MHz N-CDMA base-station final stages, 900 MHz GSM/EDGE driver amplifiers, industrial RF heating at 13.56/27/40 MHz (with retuning), and UHF TV/FM broadcast transmitters. When designing with this part, mount the flange directly to a flat copper or aluminum heatsink using thermal compound; any mounting torque variation directly impacts Rth and long-term reliability. Ensure the gate bias network is low-impedance at the operating frequency to prevent parametric oscillation, and always sequence the drain supply with the gate bias to avoid forward-biasing the gate oxide.
ドロップイン代替品: MRF6S9045NBR1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MRF6S9045NBR1 （同一形状・フットプリント） — 相違点: Manufacturer, Mounting Type, Transistor Type, Application, Operating Frequency.
クイック比較ツール — 並列比較する代替部品を選択:
MRF6S9045NR1
✅ ドロップイン✓ 在庫あり
$16.4 / 個
データシートを見る →MRF6S9045MBR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF6S9045MR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF6S9060NR1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF9030MBR1
✅ ドロップイン✓ 在庫あり
$25.8 / 個
データシートを見る →MRF6S9045NBR1 最大定格＆電気的特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| トランジスタタイプ | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral DMOS, RF power |
| Operating Frequency | Up to 1000 MHz (typical 880 MHz) |
| Drain-Source Voltage (V DSS min) | 68 V |
| Typical Operating Drain Voltage (V DD) | 28 V |
| Quiescent Drain Current (I DQ) | 350 mA |
| Output Power (P out avg) | 10 W |
| Power Gain (G ps) | 22.7 dB at 880 MHz |
| Maximum Power Dissipation (P D max) | 175 W |
| Configuration | Single, common-source |
| 実装タイプ | Surface Mount (flange/ceramic) |
| パッケージ / ケース | NI-880H-2L (TO-272-2 variant) |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
MRF6S9045NBR1 ピン構成
| ピン 1 | Gate — RF input / gate bias (enhancement-mode, positive Vgs) |
| ピン 2 | Drain — RF output / drain bias (28 V typical) |
| ピン 3 | Source / Flange — Source and thermal pad, mounted to heatsink |
安全動作領域
主な用途
MRF6S9045NBR1 の用途: 6 件s: 880 MHz N-CDMA Base Station Final Stage, 900 MHz GSM/EDGE Driver Amplifier, Industrial RF Heating at Sub-1 GHz, UHF TV/FM Broadcast Transmitter Stage, Public Safety / Land Mobile Radio Repeater PA, Sub-1 GHz ISM Data Link Power Amplifier.
880 MHz N-CDMA Base Station Final Stage
The MRF6S9045NBR1's 22.7 dB gain and 10 W Pout at 880 MHz directly meet the output-power and gain-budget requirements of single-carrier N-CDMA base-station final amplifier stages running from a 28 V rail. Its enhancement-mode gate simplifies the bias sequencer and the internally input-matched NI-880 footprint reduces external component count on the demo board, accelerating time-to-prototype for small-cell and micro-cell base stations. Designers should use the NXP demo board PCB layout as a starting reference and follow the datasheet's recommended drain-bias choke and harmonic-filter topology to meet ACLR and spurious-emission masks at rated Pout. Place a low-impedance gate-bias network with adequate RF decoupling to prevent parametric oscillation under CDMA peak currents.
おすすめ
900 MHz GSM/EDGE Driver Amplifier
The MRF6S9045NBR1's broadband 800-1000 MHz capability and 22.7 dB gain make it a natural fit for 900 MHz GSM and EDGE driver amplifier stages in macro and micro base stations. At 900 MHz the device typically delivers slightly higher small-signal gain than at 880 MHz with comparable drain efficiency, which improves the overall PA module efficiency and reduces heat-sink mass. The 28 V drain bias matches standard GSM PA rails. Retune the input/output matching networks to 900 MHz (not 880 MHz) for best ACLR performance, and add a harmonic filter at the output to meet ETSI spurious-emission limits. The device can also serve as a driver for a higher-power final stage such as the NXP MRF9030MBR1 in Doherty configurations.
おすすめ
Industrial RF Heating at Sub-1 GHz
Industrial RF heating applications such as plastic welding, drying, and plasma excitation often operate at ISM frequencies (13.56, 27, 40 MHz) but some higher-power systems push to 81-915 MHz ISM bands where the MRF6S9045NBR1's broadband lateral MOSFET architecture excels. The 175 W absolute power dissipation and enhancement-mode gate (no negative supply needed) simplify the RF generator design and lower BOM cost. The 28 V rail supports continuous duty cycle operation with a flat copper spreader. Designers should plan heatsink area for full 10 W CW output plus matching-network losses, and add a circulator or directional coupler with reflected-power shutdown for plasma-load mismatch protection.
おすすめ
UHF TV/FM Broadcast Transmitter Stage
UHF TV and FM broadcast transmitters in the 470-900 MHz band can use the MRF6S9045NBR1 as a driver or low-power final stage where 10 W Pout meets the ERP requirement. The broadband match reduces combiner count in multi-channel transmitters and the 22.7 dB gain reduces the gain burden on the upstream exciter. DVB-T, ATSC, and analog FM signals all fall within the device's envelope-tracking envelope bandwidth. For DVB-T or ATSC with high PAPR, derate Pout to 5-7 W average to keep peak voltages within SOA. The ceramic NI-880 package provides the long-term reliability expected for 24/7 broadcast service.
おすすめ
Public Safety / Land Mobile Radio Repeater PA
Public-safety land-mobile-radio (LMR) repeaters operating in the 800-900 MHz band (UHF T-band, 900 MHz LMR) often require 5-15 W final-stage Pout where the MRF6S9045NBR1's 10 W average rating is an excellent fit. The enhancement-mode gate enables fast Tx/Rx switching with simple sequencer circuitry, critical for half-duplex repeater duty cycles. The 28 V rail supports mobile-installation power budgets fed from 13.8 V via a boost converter. Include harmonic filtering to meet FCC Part 90 spurious-emission limits, and derate Pout by 1-2 dB for analog FM versus digital (P25, DMR) due to higher crest factor.
おすすめ
Sub-1 GHz ISM Data Link Power Amplifier
Sub-1 GHz ISM data links in the 902-928 MHz band (LoRa, SigFox, proprietary SCADA) often require a power amplifier to extend link budget beyond the radio chip's native output. The MRF6S9045NBR1 can boost a +20 dBm radio chip to +40 dBm (10 W) at the antenna while maintaining spectral mask compliance for FHSS or DSSS modulation. The 28 V rail can be derived from a 12 V battery via a small boost converter for solar-powered remote sites. Add a Tx/Rx switch or circulator and bandpass filter at the antenna to meet regulatory masks. The broadband match supports multi-band data links without retuning.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF6S9045NBR1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF6S9045NR1 | MRF6S9045MBR1 | MRF6S9045MR1 | MRF6S9060NR1 | MRF9030MBR1 |
|---|---|---|---|---|---|---|
| Package | NI-880H-2L (TO-272-2) | NI-880H-2L (TO-272-2) - same | NI-880H-2L (TO-272-2) - same | NI-880H-2L (TO-272-2) - same | NI-880 family (TO-272) - same | NI-880 family (TO-272) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout avg) | 10 W | 10 W (identical die) | 10 W (M-variant sub-band) | 10 W (M-variant sub-band) | 60 W (higher power stage) | 30 W (higher power stage) |
| Operating Frequency | 800-1000 MHz (typ 880 MHz) | 800-1000 MHz | 800-1000 MHz (M-variant sub-band) | 800-1000 MHz (M-variant sub-band) | 800-1000 MHz | 800-1000 MHz |
| Drain Voltage (Vdd) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| V DSS (min) | 68 V | 68 V | 68 V | 68 V | 68 V | 68 V |
| Reel Orientation (suffix) | lead-down (-NBR1) | lead-up (-NR1) | lead-down (-MBR1) | lead-up (-MR1) | lead-up (-NR1) | lead-down (-MBR1) |
主な差別化要因
- Internally input-matched for 800-1000 MHz in NI-880 package （vs MRF9030MBR1)
- Enhancement-mode gate (no negative bias supply) （vs Depletion-mode competitor RF MOSFETs (e.g., older BLF-series parts))
- 10 W Pout specifically optimized for 28 V small-cell and micro-cell base stations （vs MRF6S9060NR1 (60 W) and MRF9030MBR1 (30 W))
- Same-die reel-orientation variants (-NR1 vs -NBR1) for SMD line flexibility （vs Single-orientation competitor RF MOSFETs)
設計ノート
The MRF6S9045NBR1's 175 W absolute power dissipation rating assumes an infinite heatsink. In practice, design for a worst-case Pdiss of approximately 25 W (10 W Pout at ~40% efficiency) and use a copper or aluminum spreader with Rth_heatsink < 0.5 C/W to keep Tj below 150 C. Apply thermal compound (Wakefield Type 120 or 3M TC-2810) and torque the mounting screws evenly to the datasheet's specification to avoid cracking the ceramic NI-880 flange. Verified thermal stack: Rth_J-C ~0.4 C/W + Rth_C-S ~0.1 C/W + Rth_S-A < 0.5 C/W → Tj max ~155 C at full load.
Always sequence the gate bias on BEFORE applying the 28 V drain supply, and remove drain voltage BEFORE removing gate bias. Reverse sequencing forward-biases the gate oxide and destroys the MOSFET. Add a gate-voltage clamp (e.g., 10 V Zener) to protect against voltage transients during sequencing faults. Use a low-impedance gate-bias network (large RFC + decoupling) to ensure RF stability across the 800-1000 MHz operating band; poor gate decoupling is the #1 cause of parametric oscillation in NXP RF MOSFET PA designs.
Use the NXP MRF6S9045N demo board PCB stack-up (Rogers RO4003C, 0.032 inch dielectric) as the starting reference for the input/output matching networks. Maintain 50 Ω microstrip line widths consistent with the substrate and keep the gate and drain traces as short as possible to minimize parasitic inductance. Place the gate and drain bias chokes perpendicular to the RF trace to avoid magnetic coupling. The exposed ceramic flange must be soldered (or screwed) to a continuous ground plane that extends under the matching network to provide a low-inductance return path.
Harmonic terminations are critical at 800-1000 MHz: include a low-pass or bandpass filter at the output to attenuate 2f0 and 3f0 products that can violate FCC/ETSI spurious-emission masks. At 10 W Pout, even -30 dBc harmonics can exceed regulatory limits. Place a small coupling port for a directional coupler / output power detector if closed-loop power control is required. Keep the input matching network physically separated from the output matching network to prevent feedback-loop oscillation at the operating frequency.
コンプライアンス情報
RoHS and lead-free per NXP product family declaration. AEC-Q100 is not applicable - this is a base-station / industrial RF part, not an automotive grade. REACH and conflict-minerals compliance assumed based on NXP standard declarations; confirm via NXP product compliance portal for formal documentation.
