MRF7P20040HSR3 - 10W RF Power LDMOS 2.03GHz | NXP
部品番号: MRF7P20040HSR3 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $45.77 | $45.77 |
| 10 | $41.5 | $415.00 |
| 100 | $36.8 | $3,680.00 |
| 500 | $32.2 | $16,100.00 |
| 1,000 | $28.9 | $28,900.00 |
MRF7P20040HSR3 概要
RF power MOSFETs (metal-oxide semiconductor field-effect transistors) are specialized power transistors designed for high-frequency amplification in the MHz-to-GHz range. The MRF7P20040HSR3 belongs to the LDMOS family, which dominates cellular base station power amplifier (PA) designs because of its high breakdown voltage, excellent thermal stability, and superior RF ruggedness compared to GaAs or bipolar alternatives. Within the broader semiconductor hierarchy, RF power MOSFETs sit alongside GaN HEMTs and SiC MESFITs as the primary technologies for sub-6 GHz high-power amplification.
Key differentiating features of the MRF7P20040HSR3 include 18.2 dB typical gain at 2.03 GHz, a 65 V drain-source breakdown rating for robust transient survival, and a 100% PAR (peak-to-average ratio) tested guarantee for W-CDMA modulation signals. Production testing is performed in a symmetrical Doherty configuration, confirming the device's compatibility with high-efficiency Doherty amplifier architectures commonly used in modern LTE and 5G-NR base stations.
The LDMOS process delivers higher drain efficiency than competing bipolar transistors when biased for Class AB operation, while supporting the wide instantaneous bandwidth required for multi-carrier signal aggregation. The NI-780S-4L ceramic package provides low thermal resistance and excellent RF grounding through its integrated lead frame.
Typical applications include W-CDMA and LTE base station final-stage power amplifiers, CDMA2000 driver amplifiers, and Doherty amplifier modules operating in the 1.8 to 2.2 GHz cellular band. The device is also used in repeaters, microcells, picocells, and indoor distributed antenna systems.
Designers should note that the MRF7P20040HSR3 requires a carefully designed impedance-matching network to achieve rated gain and efficiency. Proper thermal management through the ceramic package mounting surface is essential, and bias sequencing must follow NXP application note guidelines to prevent parametric drift.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a comprehensive reference for evaluating the MRF7P20040HSR3 against NXP's broader 7-series RF MOSFET family.
ドロップイン代替品: MRF7P20040HSR3 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MRF7P20040HR3
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF7P20040HNR3
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MRF7P20040HSR3 最大定格＆電気的特性
| トランジスタタイプ | LDMOS (Dual), N-Channel Enhancement-Mode Lateral |
| Rated Drain-Source Voltage | 65 V |
| Test Voltage | 32 V |
| Test Current | 150 mA |
| Operating Frequency Range | 1.8 GHz to 2.2 GHz |
| Test Frequency | 2.03 GHz |
| Output Power (CW, Average) | 10 W |
| Typical Gain | 18.2 dB at 2.03 GHz |
| Efficiency Class | Class AB / Class C capable |
| パッケージ | NI-780S-4L (ceramic, 4-lead) |
| VSWR Ruggedness | 5:1 at 32 V DC, 2017.5 MHz, 50 W CW (3 dB overdrive) |
| Modulation Format | W-CDMA / CDMA / LTE |
| Application Architecture | Doherty amplifier tested, Symmetrical |
| PAR Test | 100% PAR tested for guaranteed output power |
| Lead Free | Yes (per datasheet) |
MRF7P20040HSR3 ピン構成
| ピン 1 | Gate — Gate bias input; DC control electrode for LDMOS |
| ピン 2 | Drain — Drain connection; RF output and DC supply input |
| ピン 3 | Source — Source connection; RF and DC ground return |
| ピン 4 | Source — Source connection; secondary ground for improved RF performance |
DC 安全動作領域
主な用途
MRF7P20040HSR3 の用途: 6 件s: W-CDMA Base Station Final-Stage Power Amplifier, LTE Base Station Doherty Power Amplifier Module, CDMA2000 Cellular Base Station Amplifier, Indoor Distributed Antenna System (DAS) Repeater, Microcell and Picocell Base Station PA, RF Driver Amplifier for Higher-Power Macro Cells.
W-CDMA Base Station Final-Stage Power Amplifier
The MRF7P20040HSR3 is purpose-built for W-CDMA base station final-stage power amplifiers operating in the 2010-2025 MHz downlink band. With 18.2 dB typical gain at 2.03 GHz and 10 W average CW output power rating, it provides the gain and power density required to drive the antenna feed network after Doherty combining. The 100% PAR testing guarantees reliable performance with the high peak-to-average ratios of W-CDMA modulation, while the 5:1 VSWR ruggedness at 50 W CW handles antenna mismatch faults that occur in real-world cellular deployments. Designers typically bias the device in Class AB at 150 mA quiescent current with 32 V drain supply to optimize linearity and efficiency.
おすすめ
LTE Base Station Doherty Power Amplifier Module
In LTE base station designs, the MRF7P20040HSR3 serves as the carrier amplifier in a symmetrical Doherty configuration, providing the high efficiency required for LTE signals with their high peak-to-average ratios up to 8 dB. The device's 18.2 dB gain reduces driver-stage requirements, while the 32 V test condition aligns with standard cellular PA power supply rails. Production testing at NXP confirms Doherty configuration performance, giving designers confidence in the load modulation characteristics needed for high-efficiency operation across the LTE signal envelope. The NI-780S-4L ceramic package's low thermal resistance supports continuous high-power operation in densely packed remote radio head (RRH) modules.
おすすめ
CDMA2000 Cellular Base Station Amplifier
The MRF7P20040HSR3's 1.8-2.2 GHz operating range and W-CDMA/CDMA compatibility make it directly applicable to CDMA2000 1X and EV-DO base station amplifiers in the cellular band. The device's LDMOS seventh-generation process technology provides the linearity needed for CDMA2000 reverse-link and forward-link amplification, while the 10 W average power rating suits microcell and picocell deployment scenarios. The 32 V test condition with 150 mA bias current supports Class AB operation that balances linearity and drain efficiency. NXP's production testing in Doherty configuration confirms multi-mode capability for legacy CDMA networks still in operation worldwide.
おすすめ
Indoor Distributed Antenna System (DAS) Repeater
For indoor distributed antenna systems and cellular repeaters operating in the 1.8-2.2 GHz band, the MRF7P20040HSR3's compact NI-780S-4L ceramic package enables high-density PCB layouts. The 18.2 dB gain and 10 W average power rating support line amplifier stages that compensate for distribution network losses in enterprise and venue DAS deployments. The device's LDMOS technology provides stable gain across temperature variations common in indoor equipment closets, and the ceramic package's thermal performance supports fanless operation. Designers leverage the same NXP evaluation board reference designs for fast prototyping of DAS repeater line amplifier cards.
おすすめ
Microcell and Picocell Base Station PA
Small cell deployments including microcells and picocells operating in the cellular 1.8-2.2 GHz band benefit from the MRF7P20040HSR3's moderate 10 W power level that fits small-cell coverage requirements without excess heat dissipation. The dual-die design in the NI-780S-4L ceramic package provides the power density needed for compact small-cell radio units, while the 65 V breakdown rating supports operation across varying load conditions typical of dense urban small-cell deployments. The device's W-CDMA and CDMA compatibility aligns with the multi-mode requirements of modern small cells supporting 3G and 4G simultaneously in heterogeneous network architectures.
おすすめ
RF Driver Amplifier for Higher-Power Macro Cells
While the MRF7P20040HSR3 itself is a 10 W device, it can also serve as a driver stage for higher-power macro cell amplifiers when paired with external gain stages or higher-power NXP LDMOS parts. The 18.2 dB typical gain at 2.03 GHz provides sufficient drive level for cascading into devices like the MRF7P38040H or 80 W class devices used in macro cell deployments. Designers use the MRF7P20040HSR3 in this configuration when they need additional gain stages before the final PA in high-power macro base station designs, or for tower-mounted amplifier (TMA) modules that boost uplink signals from mobile devices back to the base station.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF7P20040HSR3 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF7P20040HR3 | MRF7P20040HNR3 |
|---|---|---|---|
| Package | NI-780S-4L | NI-780S-4L - same | NI-780S-4L - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Average CW) | 10 W | 5 W (single-die) | 10 W |
| Frequency Range | 1.8-2.2 GHz | 1.8-2.2 GHz | 1.8-2.2 GHz |
| Typical Gain at 2.03 GHz | 18.2 dB | 18.2 dB | 18.2 dB |
| Drain-Source Voltage Rating | 65 V | 65 V | 65 V |
| Number of Dice | 2 (dual-die) | 1 (single-die) | 2 (dual-die) |
| VSWR Ruggedness | 5:1 at 50 W CW | 5:1 at 50 W CW | 5:1 at 50 W CW |
主な差別化要因
- Dual-die design in same NI-780S-4L package （vs MRF7P20040HR3)
- 100% PAR tested for W-CDMA modulation （vs Generic LDMOS competitors)
- Production tested in symmetrical Doherty configuration （vs Single-device test-only competitors)
設計ノート
Estimated: At 10 W CW output with 32 V drain supply and typical 30% drain efficiency, the device dissipates approximately 23 W internally. The NI-780S-4L ceramic package requires mounting on a copper spreader or heatsink with thermal compound to maintain junction temperature below 200C. For continuous CW operation in enclosed base station housings, forced-air cooling or a cold-plate is recommended. Designers should follow the NXP evaluation board thermal layout as the baseline reference.
Use the recommended substrate (typically Rogers RO4350B or Arlon AD255C) with the specific microstrip trace dimensions from the NXP evaluation board layout. Input and output matching networks should use high-Q ceramic capacitors rated for RF power handling. The drain bias feed should include a quarter-wave microstrip RF choke followed by a 10uF bypass capacitor and a 100nF broadband decoupling capacitor. Ground vias should be placed at 2mm spacing directly under the package source leads to minimize parasitic inductance.
Critical pitfalls to avoid: 1) Applying drain voltage before gate bias can forward-bias the gate and cause parametric drift or destruction. 2) Exceeding the 65 V drain breakdown rating during load mismatch transients - ensure the load network can absorb reflected power safely. 3) Operating without proper RF stabilization - the device can oscillate parasitically at low frequencies if the bias network is improperly designed. 4) Exceeding the maximum 200C junction temperature under continuous CW operation. Always sequence gate bias on first, then drain voltage; reverse sequence on power-down.
コンプライアンス情報
Lead-free per NXP datasheet. RoHS compliance confirmed per distributor listings. REACH and halogen-free status not explicitly listed in verified data - defaulting to unknown. AEC-Q100 not applicable for RF power MOSFETs (this is not an automotive-qualified part unless designated with Q1 suffix).
