MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
部品番号: MRF7S19100NR1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $35.2 | $352.00 |
| 100 | $31.4 | $3,140.00 |
| 500 | $27.85 | $13,925.00 |
| 1,000 | $24.6 | $24,600.00 |
MRF7S19100NR1 概要
An RF power MOSFET (LDMOS) is a specialized lateral double-diffused metal-oxide-semiconductor field-effect transistor engineered for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. Unlike small-signal MOSFETs, RF LDMOS devices feature a drift region that supports high breakdown voltage while maintaining excellent RF gain, making them the dominant transistor technology in cellular base-station power amplifiers. MRF7S19100NR1 sits in the broader hierarchy: RF power transistor -> RF MOSFET -> LDMOS -> discrete semiconductor -> electronic component.
Key features include 17.5 dB small-signal gain at 1.96 GHz, 29 W average Pout with 7.5 dB PAR W-CDMA input signal, 28 V typical drain supply, 65 V minimum drain-source breakdown voltage, and integrated electrostatic discharge protection. The device supports Class AB and Class C bias modes and is designed for multi-carrier amplifier (MCPA) applications where linearity and efficiency are both critical.
The MRF7S19100NR1 architecture uses NXP's seventh-generation (Gen7) LDMOS process, which provides improved thermal resistance (theta_JC below 0.4 C/W) and high power density. The overmolded plastic TO-270 WB-4 package with ceramic window minimizes parasitic losses at 2 GHz while providing a robust surface-mountable footprint suitable for automated assembly.
Typical applications include W-CDMA and CDMA2000 base-station power amplifiers, multi-carrier cellular repeaters, and 1.9 GHz PCS/DCS-1900 band linear amplifiers. The 1930-1990 MHz coverage targets the North American PCS uplink/downlink bands.
When designing with this part, maintain 50 ohm microstrip transmission lines at the RF input and output leads, place the device on a thermal-via array for the source tabs, and ensure the bias sequencing circuit prevents VGS from being applied before VDD to avoid device damage.
This page synthesizes NXP datasheet specifications, current distributor pricing, drop-in alternative candidates, and practical RF design guidance not consolidated in any single manufacturer document.
ドロップイン代替品: MRF7S19100NR1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MRF7S19100NR1 （同一形状・フットプリント） — 相違点: Configuration.
クイック比較ツール — 並列比較する代替部品を選択:
MRF7S19100NBR1
✅ ドロップイン✓ 在庫あり
$30.1 / 個
データシートを見る →MRF7S19125NR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF7S19060NR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF7S18125NR1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF7S19100NR1 最大定格＆電気的特性
| トランジスタタイプ | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (V(BR)DSS) min | 65 V |
| Drain Supply Voltage (VDD) typical | 28 V |
| Output Power (Pout) Avg W-CDMA | 29 W |
| Power Gain | 17.5 dB |
| Drain Current at Test (ID) | 1 A |
| Quiescent Current (IDQ) typical | 1000 mA to 1400 mA |
| Test Voltage | 28 V |
| パッケージ | TO-270 WB-4 (Case 1486-03) Plastic |
| 実装タイプ | Surface Mount |
| Configuration | Single, Common Source |
| Operating Mode | Class AB / Class C |
| Modulation Target | Single-Carrier W-CDMA (3GPP TM1 64 DPCH) |
MRF7S19100NR1 ピン構成
| ピン 1 | DRAIN — RF output / drain (connected to internal drain bond) |
| ピン 2 | GATE — RF input / gate bias |
| ピン 3 | SOURCE — Source tab (also primary thermal path, grounded) |
| ピン 4 | NC — Not connected (per datasheet case 1486-03 style 1) |
安全動作領域 - DC
主な用途
MRF7S19100NR1 の用途: 6 件s: W-CDMA PCS Base Station Power Amplifier, CDMA2000 1X and EV-DO Base Station PA, Multi-Carrier Power Amplifier (MCPA) for PCS Band, 1900 MHz Band Cellular Repeater / Booster, Industrial 2 GHz Band RF Power Source, Public Safety / LTE Band 25 Small Cell PA.
W-CDMA PCS Base Station Power Amplifier
The MRF7S19100NR1 is the reference final-stage PA transistor for 1900 MHz PCS-band W-CDMA base-station amplifiers requiring 29 W average output at 28 V. Its 17.5 dB gain allows a single-ended or push-pull final stage with a milliwatt-level driver, while 65 V V(BR)DSS provides the 2.3x voltage headroom needed for reliable operation into a 10:1 VSWR load mismatch. The device's linearity is characterized for 3GPP Test Model 1 with 64 DPCH at 50% clipping, which is exactly the W-CDMA stimulus used by carriers; ACLR and EVM are optimized at IDQ around 1000-1400 mA in Class AB. For a 3-sector macro base station at 40 W average per PA, two MRF7S19100NR1 devices can be combined in a balanced configuration to deliver the required sector power with margin.
おすすめ
CDMA2000 1X and EV-DO Base Station PA
The MRF7S19100NR1 is well-suited for CDMA2000 1X and EV-DO base-station final-stage PAs operating in the 1930-1990 MHz PCS band. Its 29 W average output capability at 28 V comfortably supports a 20 W pilot + traffic channel allocation with peak-to-average ratio of 4 to 5 dB. The Gen7 LDMOS process provides the gain linearity needed for reverse-link IS-95/CDMA2000 pilot coherence, while the 65 V breakdown ensures ruggedness against antenna disconnect events common in field deployments. CDMA2000 carriers typically run Class AB bias near 1000 mA IDQ for best ACPR, which falls directly within the datasheet's recommended quiescent current range. The TO-270 WB-4 ceramic-window package minimizes lead inductance at 1.96 GHz, supporting the broadband matching required for multi-carrier CDMA2000 deployments.
おすすめ
Multi-Carrier Power Amplifier (MCPA) for PCS Band
The MRF7S19100NR1's 17.5 dB gain, 65 V breakdown, and characterized W-CDMA linearity make it a strong candidate for multi-carrier power amplifier (MCPA) modules serving the entire 1930-1990 MHz PCS uplink and downlink spectrum simultaneously. In an MCPA, multiple CDMA or LTE carriers are combined before the final PA, so the device must handle high peak-to-average ratios (8 to 10 dB) while preserving intermodulation distortion performance. The NXP datasheet shows IMD3 and IMD5 characterization at 28 V with appropriate output matching networks; designers typically use a DPD (digital pre-distortion) loop ahead of the MRF7S19100NR1 to linearize the composite signal. The TO-270 WB-4 package's source-tap thermal path supports continuous 29 W multi-carrier operation with a copper-spreader PCB design.
おすすめ
1900 MHz Band Cellular Repeater / Booster
The MRF7S19100NR1 can be used as the final PA in 1900 MHz band cellular repeaters and signal boosters that extend indoor coverage in the PCS band. Repeaters typically require moderate output power (1 to 10 W average) with excellent linearity to avoid self-interference feedback oscillations, and the MRF7S19100NR1's high gain and low distortion profile fit this role when the device is backed off to its linear region. Its 28 V supply matches the +24 V or +27 V rails commonly used in PoE-powered repeater equipment, simplifying power architecture. Designers often bias the device at lower IDQ around 500 to 800 mA for Class AB efficiency, well within the safe operating envelope. The overmolded plastic TO-270 package supports compact repeater chassis with surface-mount assembly.
おすすめ
Industrial 2 GHz Band RF Power Source
Beyond cellular, the MRF7S19100NR1's 1930-1990 MHz coverage and 29 W output make it useful as a CW or pulsed RF power source for industrial applications such as RF plasma generation, microwave heating, and 2 GHz scientific instrumentation. In CW mode at 28 V, the device can deliver continuous power well above its 29 W W-CDMA average rating, subject to thermal management. The 17.5 dB gain allows the device to reach full output from a 100 mW signal source, simplifying the drive chain. The 65 V breakdown provides ruggedness against load mismatch in industrial environments where antenna or load characteristics may be variable or poorly controlled. Industrial designers should follow NXP's thermal design guidelines and de-rate the device appropriately for CW operation.
おすすめ
Public Safety / LTE Band 25 Small Cell PA
The MRF7S19100NR1 covers the lower portion of the LTE Band 25 uplink/downlink spectrum (1930-1995 MHz) used by North American public-safety LTE networks and small-cell deployments. Small cells require compact, surface-mountable final-stage PAs with high gain and moderate output, and the TO-270 WB-4 package and 17.5 dB gain are ideal. The device's W-CDMA linearity is also relevant for LTE signals with similar PAPR characteristics. Designers can operate the device at IDQ around 1000 mA in Class AB for best LTE ACLR performance, with DPD correction available for higher-order modulations. The 65 V breakdown supports reliable field operation with antenna VSWR variations typical of small-cell deployments on lampposts and building facades.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF7S19100NR1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF7S19100NBR1 | MRF7S19125NR1 | MRF7S19060NR1 | MRF7S18125NR1 |
|---|---|---|---|---|---|
| Package | TO-270 WB-4 (Case 1486-03) | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1805-1880 MHz |
| Output Power (W-CDMA Avg) | 29 W | 29 W | 28 W | 60 W pulsed | 125 W pulsed |
| Power Gain | 17.5 dB | 17.5 dB | 16.5 dB | 16 dB | 14 dB |
| Drain Supply Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 65 V min | 65 V min | 65 V min | 65 V min | 65 V min |
| Transistor Technology | Gen7 LDMOS | Gen7 LDMOS | Gen7 LDMOS | Gen7 LDMOS | Gen7 LDMOS |
主な差別化要因
- Reference part for 1900 MHz PCS band W-CDMA base-station PAs （vs MRF7S18125NR1 (1805-1880 MHz DCS band))
- Highest gain in 1930-1990 MHz family at 29 W average output （vs MRF7S19060NR1 (60 W pulsed, 16 dB gain))
- Factory-matched bin option available for PA pairs （vs MRF7S19100NBR1)
設計ノート
Estimated: at Pout = 29 W average W-CDMA with 7.5 dB PAR and drain efficiency near 30%, the MRF7S19100NR1 dissipates roughly 50 to 60 W of heat in the worst case. The TO-270 WB-4 package relies on the source tabs as the primary thermal path; the PCB must include a continuous ground-plane thermal pad directly under the source and an array of plated thermal vias (typically 0.3 mm pitch, 0.6 mm drill) connecting to inner-plane copper. Without proper thermal design, junction temperature can exceed 200 C and the device will enter thermal shutdown or fail prematurely. Reference the NXP application note on thermal design for Gen7 LDMOS in TO-270 packages for detailed thermal resistance calculations.
The 50 ohm microstrip input and output traces must be kept as short as possible and matched to the device's gate and drain bond-wire impedances. Use Rogers RO4350B or equivalent low-loss substrate for the matching network to minimize insertion loss at 1.96 GHz. Place bypass capacitors (100 nF ceramic + 10 uF tantalum) as close as possible to the drain bias feed, with a pi-network (RLC) to filter out low-frequency noise on the 28 V supply rail. The gate bias line should be heavily decoupled to prevent RF leakage into the bias supply.
Do not apply gate bias (VGS) before the drain supply (VDD) is present, as this can cause the device to draw excessive current and fail. Implement a bias sequencer that ensures VDD reaches its operating voltage before VGS is applied, and removes VGS before VDD on power-down. Also avoid operating the device without a proper heat sink attached - even brief operation at full CW power without thermal management can cause irreversible damage due to the high power density of the Gen7 LDMOS die in the TO-270 WB-4 package.
Use a SAC305 lead-free solder reflow profile with peak temperature of 245 C to 260 C and time above liquidus (TAL) under 60 seconds to avoid plastic-package warping. The source tabs should be soldered to the PCB ground plane using a continuous ground pad with multiple thermal vias; do not rely on the gate and drain leads for thermal relief. Apply a thin (0.05 mm) thermal interface material between the package top and any optional heat spreader to spread heat laterally.
At 1.96 GHz, even small parasitic inductances (1 nH) in the source path can cause significant gain loss and potential instability. Keep source grounding vias as close as physically possible to the source tab connection point. Add small gate and drain series resistors (1 to 5 ohms) close to the device leads to suppress out-of-band oscillations; verify with a spectrum analyzer that no spurious oscillations exist at frequencies below 1 GHz or above 4 GHz during initial prototype bring-up.
コンプライアンス情報
Compliance data not present in verified web sources - all fields set to 'unknown' per Data Authenticity Rule 2. AEC-Q100 not applicable (RF power transistor, not automotive-qualified per available data). RoHS/REACH should be verified against the current NXP product page or material declaration document before use in restricted-substance environments.
