MRF8P23080HSR3 - 80W 2300-2400MHz LDMOS RF Power MOSFET | NXP
部品番号: MRF8P23080HSR3 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $96.5 | $96.50 |
| 10 | $86.85 | $868.50 |
| 50 | $79.2 | $3,960.00 |
| 100 | $71.4 | $7,140.00 |
| 250 | $65.1 | $16,275.00 |
MRF8P23080HSR3 概要
A Radio Frequency Power MOSFET (RF Power MOSFET) is a discrete transistor specifically engineered to amplify high-frequency signals at power levels far beyond what small-signal RF transistors can deliver. Architecturally it sits within the broader taxonomy: MOSFET -> power MOSFET -> RF power transistor -> base-station PAs; it is the workhorse of macro-cell transmitter chains where linearity, gain and ruggedness determine link capacity.
Key electrical features include a 65 V drain-source breakdown rating, a quiescent bias of 280 mA at 28 V for gain and linearity optimisation, 14.6 dB typical power gain at 2.3 GHz, and operation across the 2300-2400 MHz band with extension to 2620 MHz. The device is supplied in the NI-780S-4L industry-standard air-cavity ceramic package with a flange-mount flange for direct bolting to a heatsink or pallet. Lead-free and RoHS-compliant terminations are standard.
Internally the MRF8P23080HSR3 uses NXP's high-voltage laterally-diffused metal-oxide-semiconductor (LDMOS, dual) process, which combines a low on-resistance with high breakdown voltage and excellent gain at 2.3 GHz. The same die is offered as MRF8P23080HR3 in the NI-780H-4L bolt-down variant, allowing designers to switch packages without re-tuning the RF match.
Typical applications include W-CDMA, LTE, and TD-LTE macro-cell base-station Doherty final stages, S-band pulsed radar transmitters, and high-power driver stages feeding a larger final-stage LDMOS pallet. The part is recommended for linear Doherty single-carrier W-CDMA service where the average power is pushed toward P3dB compression under PAR-reduced waveforms.
Designers should select output-matching networks that present the optimum load-line at 2300-2400 MHz while keeping harmonic terminations short to ground, and must provide adequate bolt-down torque on the NI-780S-4L flange to keep the thermal resistance (Rthjc) within the datasheet envelope.
This page consolidates distributor pricing, pin-equivalent same-brand variants, and Doherty amplifier design considerations not aggregated on a single manufacturer or distributor page.
ドロップイン代替品: MRF8P23080HSR3 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MRF8P23080HSR3 （同一形状・フットプリント） — 相違点: Manufacturer, Mounting Type, Package / Case.
クイック比較ツール — 並列比較する代替部品を選択:
MRF8P23080HR3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF8P23080HSR3-RMK
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF8P23080HSR3 最大定格＆電気的特性
| トランジスタタイプ | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Drain-Source Voltage (V DSS) | 65 V |
| Drain Bias Voltage (V DD) | 28 V (typical operating) |
| Test Quiescent Current (I DQ) | 280 mA |
| Frequency Range | 2300 MHz to 2620 MHz |
| Center Test Frequency | 2.3 GHz |
| Typical Power Gain | 14.6 dB |
| Average Output Power (P3dB-class, single-carrier W-CDMA) | 16 W |
| パッケージ / ケース | NI-780S-4L (air-cavity ceramic, flange-mount) |
| 実装タイプ | Chassis / flange-mount, bolt-down with screws |
| Maximum Operating Temperature (Tj) | 225 C (junction) |
| Configuration | Common source, 2 elements |
| Lead-Free / RoHS | Lead-Free Status confirmed per DigiKey listing |
| Typical Modulation Formats | W-CDMA, LTE, TD-LTE; Class AB and Class C |
| Suggested Topology | Doherty final stage (single-carrier W-CDMA) |
MRF8P23080HSR3 ピン構成
| ピン 1 | RF IN / Gate — RF input; gate bias feed point |
| ピン 2 | RF OUT / Drain — RF output; 28 V drain bias feed point |
| ピン 3 | Source / Flange — Source tied to metal flange; chassis ground and thermal path |
| ピン 4 | Flange — Mounting flange (bolt-down to heatsink) |
安全動作領域 - MRF8P23080HSR3
主な用途
MRF8P23080HSR3 の用途: 6 件s: W-CDMA Macro-Cell Base-Station Doherty Final Stage, LTE / TD-LTE Macro-Cell Power Amplifier, S-Band Pulsed Radar Transmitter Final Stage, Driver Stage for Higher-Power LDMOS Pallets, Class AB Linear Power Amplifier Module, Class C Narrowband CW Industrial RF Amplifier.
W-CDMA Macro-Cell Base-Station Doherty Final Stage
The MRF8P23080HSR3 is purpose-built for W-CDMA macro-cell base-station Doherty final stages operating in the 2300-2400 MHz band. Its 14.6 dB typical gain at 2.3 GHz and 16 W average single-carrier W-CDMA output power (per the NXP datasheet) align directly with Class AB bias at 280 mA IDQ where carrier-device linearity drives ACLR and EVM performance. In a symmetric Doherty layout the same MRF8P23080HSR3 device serves as both carrier and peaking amplifier, supporting 8-10 dB output back-off at full P3dB efficiency peaks typical of LTE PAR-reduced signals.
おすすめ
LTE / TD-LTE Macro-Cell Power Amplifier
For LTE and TD-LTE base stations deployed in the 2300-2620 MHz TDD allocations (Bands 30/40/n38/n40), the MRF8P23080HSR3 provides the linearity headroom and gain needed for modern OFDM modulation. Its measured single-carrier W-CDMA Doherty curves translate well to LTE 6-9 dB PAR operation, and the device's lateral LDMOS architecture maintains flat gain across the extended 2300-2620 MHz band - critical for broadband digital predistortion (DPD) loops. The NI-780S-4L package dissipates heat efficiently into the chassis-mount flange, enabling continuous-duty operation at 16 W average per device pair.
おすすめ
S-Band Pulsed Radar Transmitter Final Stage
Operating from 2300-2620 MHz in the S-band, the MRF8P23080HSR3 supports pulsed-radar transmitter applications where high peak-power and stable gain are required. While rated for CW Doherty service, the device's 65 V drain breakdown and 14.6 dB gain give designers headroom for narrow-pulse radar modulation formats. The flange-mount NI-780S-4L package provides the low thermal resistance required between pulse bursts and sustained-repetition-rate operation, and the LDMOS drain bias can be pulsed-modulated for added efficiency.
おすすめ
Driver Stage for Higher-Power LDMOS Pallets
The MRF8P23080HSR3's 14.6 dB gain at 2.3 GHz and 16 W average output position it well as a driver stage feeding a larger final-stage LDMOS pallet in multi-stage base-station line-ups. Cascade gain budgets typically allocate 10-14 dB per driver stage before the final amplifier, and the 2300-2620 MHz bandwidth covers the entire 2.3 GHz TDD spectrum without re-matching. Its 280 mA IDQ bias point keeps the driver linear enough to limit noise and IM products injected into the final amplifier's input match.
おすすめ
Class AB Linear Power Amplifier Module
For Class AB linear power amplifier modules where back-off efficiency matters less than linearity, the MRF8P23080HSR3 operates cleanly with bias at 280 mA IDQ on the carrier device. The 14.6 dB power gain supports a single-device gain block from tens of milliwatts of drive to 16 W average output, while the lateral LDMOS process provides stable gain over temperature and supply variations. This topology suits small-cell or micro-cell radio heads requiring better than -45 dBc ACLR at full LTE throughput.
おすすめ
Class C Narrowband CW Industrial RF Amplifier
Although its primary datasheet characterisation is single-carrier W-CDMA Doherty service, the MRF8P23080HSR3 functions in Class C narrowband CW industrial RF amplifiers such as RF lighting, plasma generators, or scientific ion-source drivers in the 2.3-2.6 GHz band. Class C operation reduces dissipation by idling the drain at 0 V on the carrier device, while a single MRF8P23080HSR3 can deliver peak power well above its rated 16 W average under such narrow-band CW drive. The 65 V breakdown margin allows designers to drop VDD to optimise efficiency without compromising ruggedness.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF8P23080HSR3 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF8P23080HR3 | MRF8P23080HSR3-RMK |
|---|---|---|---|
| Brand | NXP Semiconductors (Freescale heritage) | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S-4L (flange-mount) | NI-780H-4L (bolt-down) | NI-780S-4L (same) |
| Frequency Range | 2300 - 2620 MHz | 2300 - 2620 MHz | 2300 - 2620 MHz |
| Average Output Power (W-CDMA) | 16 W | 16 W | 16 W |
| Power Gain @ 2.3 GHz | 14.6 dB | 14.6 dB | 14.6 dB |
| Drain Bias Voltage (VDD) | 28 V | 28 V | 28 V |
| Drain-Source Breakdown (V DSS) | 65 V | 65 V | 65 V |
| Test Quiescent Current (IDQ) | 280 mA | 280 mA | 280 mA |
| Topology | Doherty / Class AB / Class C capable | Doherty / Class AB / Class C capable | Reference design kit; same topology |
主な差別化要因
- Wider operating band coverage 2300-2620 MHz in a single part （vs MRF8S21100HSR5)
- Reference matching kit variant available from same manufacturer （vs Generic competing LDMOS parts)
- Industry-standard air-cavity NI-780S-4L package （vs Non-standard LDMOS plastic packages)
設計ノート
Estimated: at 16 W average output and 28 V VDD with ~12 dB back-off, typical drain efficiency in Doherty is ~40%, meaning approximately 24 W of dissipation per carrier device and another 8-10 W on the peaking device. NI-780S-4L flange-mount thermal resistance is on the order of 0.6 C/W with proper bolt-down torque (4 in-lb on M2.5 screws to a flat machined heatsink), so a heatsink rise of 15-20 C above ambient is achievable. Designers must apply thermal interface material (e.g. ShinEtsu SARCON 30-mil) uniformly to avoid hot spots.
For Doherty amplifier layouts, place the carrier and peaking MRF8P23080HSR3 devices symmetrically around the output-combining offset line with quarter-wave impedance inverters on each drain. Keep gate and drain feed lines on separate sides to maximise isolation, and add 1000 pF and 10 uF decoupling close to each drain post to suppress low-frequency memory effects. Use Rogers RO4350B or RO4003C substrate of 20-30 mil thickness for the matching networks.
Do not bias the MRF8P23080HSR3 above 280 mA IDQ for linear Doherty service - excessive quiescent current moves the part away from optimal Doherty back-off efficiency. Do not exceed VDD > 32 V or supply ringing will push the drain above the 65 V V DSS rating; add TVS clamp and bulk capacitance at the drain feed. When using the NI-780S-4L castellated-flange variant, ensure even torque on all four mounting screws to keep thermal resistance within datasheet limits.
コンプライアンス情報
DigiKey product listing confirms Lead-Free status for MRF8P23080HSR3. No AEC-Q100 qualification - this is not an automotive part. REACH, halogen-free and conflict-mineral compliance status not surfaced in the verified web data so marked unknown.
