MRF8S18260HSR6 - 74W, 1.81GHz RF Power MOSFET | NXP Semiconductors
部品番号: MRF8S18260HSR6 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $142.5 | $142.50 |
| 10 | $128.4 | $1,284.00 |
| 100 | $112.1 | $11,210.00 |
| 500 | $98.75 | $49,375.00 |
| 1,000 | $86.2 | $86,200.00 |
MRF8S18260HSR6 概要
An RF power MOSFET is a discrete lateral or vertical transistor whose drain-source channel is optimized for large-signal radio-frequency amplification rather than low-frequency switching or analog signal conditioning. Within the broader semiconductor taxonomy, the MRF8S18260HSR6 belongs to the family of RF power transistors -> discrete MOSFETs -> discrete semiconductors, sharing its lineage with cellular-infrastructure and broadcast amplifier stages where peak envelope power, gain linearity, and ruggedness under mismatch are critical design constraints.
Key features include a 65V drain-source breakdown rating, a saturated output of 260W pulsed per the MRF8S18260 part family designation, and NXP's Ni-1230 ceramic-packaged flange intended for low-inductance PCB or heatsink mounting. Internally the device is a push-pull pair of N-channel LDMOS-style RF cells; the 'H' suffix indicates an unmatched input, allowing the engineer to build his own input-matching network for arbitrary frequencies and bandwidths within the 1.805 to 1.88 GHz window.
Typical applications include base-station power amplifiers in GSM/EDGE, TD-SCDMA, and small-cell LTE transmitters, where the part typically sits behind a driver stage and feeds into an external isolator, circulator, or harmonic filter. The high gain reduces driver-stage bill of materials, while the Ni1230 package offers repeatable thermal performance and easy drop-in mechanical replacement on the heatsink or pallet.
When designing with this part, derate carefully at high VSWR: the datasheet specifies mismatch tolerance at rated power and the engineer should verify bias, gate-voltage sequencing, and thermal resistance on the application-specific board stack-up. Use NXP's reference designs and the Freescale/NXP application notes for matched-circuit starting values, because the unmatched input leaves many degrees of freedom that must be constrained by simulation.
ドロップイン代替品: MRF8S18260HSR6 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MRF8S18260HR6
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF8S18260H-6
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF8S18120HSR6
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF8S18260HSR5
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF8S18260HSR6 最大定格＆電気的特性
| Manufacturer | NXP Semiconductors (originally Freescale) |
| トランジスタタイプ | N-Channel RF Power MOSFET |
| Test Operating Voltage | 30 V |
| DC Drain Current (Id) | 1.6 A |
| Operating Frequency Range | 1.805 GHz to 1.88 GHz |
| Output Power (Pout, CW) | 74 W |
| Power Gain (Gps) | 17.9 dB (typical, in-band) |
| Input Match | Unmatched (external matching network required) |
| パッケージ | NI-1230S-8 (SOT-1110B / Case 375J-02) |
| Pins / Terminals | 8 (cavity ceramic flange, 2 RF leads + gate/drain + thermal pad) |
| 実装タイプ | Surface Mount with bolted heatsink/flange |
| RoHS ステータス | Compliant |
| Mold / Compound Family | Ceramic-metal flange (NI-1230S cavity) |
MRF8S18260HSR6 ピン構成
| ピン 1 | GATE — Gate input (unmatched, external matching network required) |
| ピン 2 | DRAIN — Drain RF output (matched internally to 50 ohm at the test frequency) |
| ピン 3 | FLANGE / SOURCE — Source and thermal ground - bolted to heatsink via the NI-1230S ceramic flange |
| ピン 4 | NC — Not connected (mechanical lead, no internal bond) |
| ピン 5 | NC — Not connected (mechanical lead, no internal bond) |
| ピン 6 | NC — Not connected (mechanical lead, no internal bond) |
| ピン 7 | NC — Not connected (mechanical lead, no internal bond) |
| ピン 8 | FLANGE — Secondary flange mounting hole / thermal via to back side |
安全動作領域 (Estimated from datasheet test conditions at 30V)
主な用途
MRF8S18260HSR6 の用途: 6 件s: LTE / GSM Base-Station Power Amplifier Output Stage, Doherty Amplifier Final Carrier Stage, Industrial RF Heating / Plasma Generation, Aerospace / Avionics RF Transmitter, Radar / L-Band Pulsed Transmitter, Test & Measurement RF Power Reference.
LTE / GSM Base-Station Power Amplifier Output Stage
The MRF8S18260HSR6 delivers 74W CW at 17.9 dB gain across 1.805-1.88 GHz, making it well suited as the final PA in small-cell and macro-cell LTE Band-3 base-station transmitter chains. Its ceramic NI-1230S flange offers low junction-to-case thermal resistance for high-duty-cycle cellular operation, while the unmatched input lets the PA designer integrate optimized inter-stage matching with a preceding driver such as the NXP MRF8P20100 or a lower-power LDMOS. With external circulator/isolator protection and digital pre-distortion (DPD), it can deliver high ACLR-compliant average power while keeping distortion within 3GPP envelope specifications. The 30V operating point and 1.6A DC current rating fit directly inside typical 28-32V LDMOS PA bias rails used in modern base-station lineups.
おすすめ
Doherty Amplifier Final Carrier Stage
In a two-way Doherty configuration targeting 1.8 GHz cellular bands, the MRF8S18260HSR6 serves as the carrier amplifier, with a peak amplifier of similar rating providing the load-modulated boost. The 17.9 dB gain and 74W CW rating deliver roughly 60-65W of average output power when backed off 4-6 dB for PAR, satisfying small-cell LTE throughput budgets without thermal runaway. The unmatched input and ceramic flange allow the engineer to integrate offset-line and impedance-inverter networks between the carrier and peaking cells directly on the same pallet. Compared to using a plastic-packaged part, the NI-1230S flange provides the ruggedness needed for high-VSWR peaking-bias transitions.
おすすめ
Industrial RF Heating / Plasma Generation
Industrial RF plasma and heating systems operating near 1.8 GHz benefit from the MRF8S18260HSR6's 74W CW rating, 30V operation, and NXP's proven LDMOS reliability under high-duty-cycle load. With an external matching network, it can drive a plasma chamber or RF heating applicator directly, taking advantage of the unmatched gate for tuning across the 1.805-1.88 GHz window to compensate for varying load impedance. The ceramic flange bolts to a passive heatsink or water-cooled cold plate, dissipating the substantial heat produced during continuous industrial CW operation. Robustness under load mismatch - critical when plasma impedance shifts unpredictably - is a key reason ceramic-flange LDMOS devices dominate industrial RF over plastic-packaged alternatives.
おすすめ
Aerospace / Avionics RF Transmitter
The MRF8S18260HSR6's 1.805-1.88 GHz continuous-wave capability and 17.9 dB typical gain make it a candidate for airborne or ground-based aerospace telemetry transmitters operating in adjacent ITU-allocated bands. Its ceramic NI-1230S flange survives the vibration and thermal-cycling stresses of avionics environments far better than plastic-packaged RF MOSFETs, while its RoHS-compliant lead-free construction meets modern environmental mandates for flight hardware. Designers typically drive the part from a synthesized exciter at milliwatt levels, leveraging the 17.9 dB gain to reach full 74W output with minimal driver complexity - critical for SWaP-constrained aerospace platforms. Conservative derating (typically 20-30%) is recommended for long-haul aerospace duty.
おすすめ
Radar / L-Band Pulsed Transmitter
Although primarily specified CW, the MRF8S18260HSR6 family (260 in the part number indicates pulsed power headroom) is used in light-duty L-band radar or short-range surveillance transmitters operating near 1.8 GHz. Pulsed operation at modest duty cycles lets the part sit below its 74W CW thermal envelope while delivering the peak envelope power required for short-range detection. The unmatched gate and ceramic flange permit tight integration into a pulse-formation network with sub-microsecond rise-time bias modulation. For higher-power or longer-range radar, the engineer would migrate to dedicated pulsed parts, but for short-range commercial or industrial radar the MRF8S18260HSR6 is a cost-effective solution.
おすすめ
Test & Measurement RF Power Reference
The MRF8S18260HSR6 is increasingly used as a calibrated reference PA in 1.8 GHz test & measurement fixtures - spectrum-analyzer pre-amplifiers, EMC pre-compliance test setups, and reference-tone amplifiers for production testers of cellular handsets and modules. Its 17.9 dB gain and 74W CW rating give the test engineer enough headroom to inject signals well above the instrument noise floor while keeping distortion products predictable. The unmatched input allows easy tuning to specific sub-bands, and the ceramic NI-1230S flange provides repeatable thermal performance across a long test campaign. Engineers appreciate the NXP-published S-parameter dataset, which simplifies de-embedding in vector-corrected measurement systems.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF8S18260HSR6 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF8S18260HR6 | MRF8S18260H-6 | MRF8S18120HSR6 | MRF8S18260HSR5 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-1230S-8 (SOT-1110B / Case 375J-02) | NI-1230S-8 (SOT-1110B / Case 375J-02) - same | NI-1230S-8 (SOT-1110B / Case 375J-02) - same | NI-1230S-8 (SOT-1110B / Case 375J-02) - same | NI-1230S-8 (SOT-1110B / Case 375J-02) - same |
| Operating Frequency | 1.805 GHz to 1.88 GHz | 1.805 GHz to 1.88 GHz | 1.805 GHz to 1.88 GHz | 1.805 GHz to 1.88 GHz | 1.805 GHz to 1.88 GHz |
| Output Power (CW) | 74 W | 74 W | 74 W | 30 W (lower power tier, same family) | 74 W |
| Power Gain (Gps) | 17.9 dB | 17.9 dB | 17.9 dB | 18 dB typical | 17.9 dB |
| Operating Voltage | 30 V | 30 V | 30 V | 30 V | 30 V |
| DC Drain Current (Id) | 1.6 A | 1.6 A | 1.6 A | 0.9 A | 1.6 A |
| Packaging Form | Tape & Reel (R6 suffix) | Reel (H suffix) | Tray / bulk | Tape & Reel (R6 suffix) | Tape & Reel (R5 reel-code variant) |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant |
主な差別化要因
- Highest CW output power in the 1.8 GHz MRF8S family drop-in set （vs MRF8S18120HSR6)
- Tape-and-reel optimized variant （vs MRF8S18260HR6)
- Unmatched input for design flexibility （vs MRF8S18260HSR5 (R5 reel-code variant))
設計ノート
Estimated: at 74W CW output and roughly 50% DC-to-RF efficiency, the MRF8S18260HSR6 dissipates about 74W of waste heat at the test operating point. The Ni-1230S ceramic flange must be bolted to a heatsink or cold plate with a thermal compound (e.g. Wakefield S-220 or equivalent). Use a thin preform rather than paste if the production line wants repeatable thermal performance, and verify flange flatness to avoid cracking the ceramic cavity. Add a thermal cut-off or driver-stage foldback via a TE controller (e.g. MAX1978 family) to protect against heatsink-airflow loss in production.
Build the output matching network on a low-loss substrate (Rogers RO4350B or RO4003C) of at least 20 mil thickness with controlled-impedance traces. Keep all RF traces short, taper the leads to the part's gate/drain pads, and add a guard-ring of via fencing around the RF path to suppress cavity-mode leakage. Because the input is unmatched, lay out the input network on a separate copper area tied to the gate lead to allow iterative matching without disturbing the output. Provide separate analog and digital grounds with a single tie-point under or near the device.
Estimated: don't apply drain voltage before the gate bias is present - sequencing matters because the MRF8S18260HSR6 is not self-biased for Class-AB at zero gate. Use a gate-driver sequencer (such as the MAX1978 power-te controller or equivalent NXP evaluation board reference) to enforce the order: gate negative first, then drain; reverse at power-down. Avoid operating the part into an open or shorted load - the ceramic flange provides good thermal robustness but the LDMOS die can still be damaged by 10:1 or greater VSWR at full rated power. Verify with the datasheet's mismatch-tolerant curves before integrating into production amplifiers.
At 1.8 GHz, even short bond-wire leads act as noticeable impedance discontinuities; account for them in the input-matching network by including the datasheet's input lead-inductance figure as part of the L-section. Use NXP's published S-parameter dataset (touchstone file) to model the device as a black box during the early schematic phase, then move to load-pull derived X-parameters for the final harmonic-balance simulation if a non-50 ohm optimum impedance is desired for efficiency.
コンプライアンス情報
RoHS compliance and lead-free status confirmed via NXP product page and DigiKey listing; AEC-Q100 automotive qualification is not applicable for this high-power RF base-station part. Halogen-free status not explicitly stated in the verified web data.
