MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP
部品番号: MW4IC001MR4 ⚠ ラストタイムバイ| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.2 | $162.00 |
| 100 | $13.95 | $1,395.00 |
| 500 | $12.1 | $6,050.00 |
| 1,000 | $10.75 | $10,750.00 |
MW4IC001MR4 概要
This device belongs to the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power amplifier family. An LDMOS RF PA is a transistor topology optimized for high-frequency, high-power RF amplification, sitting within the broader category of RF power transistors and ultimately within the power management IC and discrete semiconductor hierarchy. LDMOS technology is widely used in cellular base-station power amplifiers because it combines high breakdown voltage, high gain at RF frequencies, and good thermal performance with low-cost silicon fabrication.
Key features of the MW4IC001MR4 include 900 mW (29.5 dBm) typical CW output power, 13 dB power gain at 2170 MHz, 38% drain efficiency, 50 ohm input/output impedance for simplified matching, integrated quiescent-current bias network, and built-in ESD protection. Its wideband 800-2170 MHz coverage lets one part address multiple cellular bands without board-level retuning.
Architecturally, the MW4IC001MR4 integrates two LDMOS gain stages in a single die, internally matched to approximately 50 ohms at the input and output. The plastic over-molded PLD-1.5 package provides a low thermal path to the PCB ground plane, and the 28 V drain bias matches the standard -48 V telecom rail derived from a DC-DC converter. A built-in active bias network sets IDQ near 12 mA without external gate bias resistors.
Typical applications include W-CDMA/CDMA2000 predistortion reference paths, GSM/EDGE driver amplifiers, multi-band cellular repeaters, and wideband general-purpose RF power blocks up to 2.2 GHz. Designers commonly pair the MW4IC001MR4 with digital pre-distortion (DPD) ASICs such as the NXP SC2200 or Analog Devices AD9371 in Doherty PA modules.
When laying out the PCB, dedicate a continuous copper ground pour under the package flag and use minimal lead-length source grounding. Maintain 50 ohm controlled-impedance traces on both RF ports, place 100 nF and 10 uF decoupling on VDD within 3 mm of the bias pin, and never exceed the 32 V absolute maximum drain rating.
ドロップイン代替品: MW4IC001MR4 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MW4IC001MR4 （同一形状・フットプリント） — 相違点: Input / Output Impedance, RoHS Status, Technology.
クイック比較ツール — 並列比較する代替部品を選択:
MW4IC001NR4
✅ ドロップイン✓ 在庫あり
$7.95 / 個
データシートを見る →MW4IC001MR4G
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MW4IC2230MBR4
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MW4IC001MR4 最大定格＆電気的特性
| Technology | LDMOS (Laterally Diffused MOS) |
| Frequency Range | 800 MHz to 2170 MHz |
| Output Power (CW, P1dB typical) | 900 mW (29.5 dBm) |
| Power Gain at 2170 MHz | 13 dB |
| Drain Efficiency at 2170 MHz | 38 % |
| Drain Supply Voltage (VDD) | 28 V (typ) |
| Quiescent Current (IDQ) | 12 mA |
| Input / Output Impedance | 50 ohm (nominal) |
| Supported Air Interfaces | GSM, TDMA, CDMA, EDGE, W-CDMA |
| Operating Case Temperature | -40C to +85C |
| パッケージ | PLD-1.5 (RF1649-4, over-molded plastic) |
| 実装タイプ | Surface Mount |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| RoHS ステータス | Non-compliant (SnPb lead finish; replaced by MW4IC001NR4 for lead-free) |
| Application Role | Analog predistortion (DPD) reference amplifier |
MW4IC001MR4 ピン構成
| ピン 1 | RF_IN — RF input, 50 ohm nominal, AC-coupled |
| ピン 2 | VGG — Gate bias supply / internal active bias reference |
| ピン 3 | VDD — Drain supply (28 V typ) |
| ピン 4 | RF_OUT — RF output, 50 ohm nominal, AC-coupled |
| ピン 5 | GND / FLAG — Thermal and electrical ground (package bottom flag) |
安全動作領域 (DC)
主な用途
MW4IC001MR4 の用途: 6 件s: W-CDMA Analog Predistortion (DPD) Reference Amplifier, CDMA2000 / 1xEV-DO Driver Stage, GSM / EDGE Driver Reference Path, Multi-Band Cellular Repeater / Booster, Wideband General-Purpose RF Power Block (Lab / Test), Aerospace / Defense RF Exciter Stage.
W-CDMA Analog Predistortion (DPD) Reference Amplifier
The MW4IC001MR4 is positioned as the small-signal reference amplifier in an analog predistortion (DPD) linearization loop ahead of a Doherty main PA in W-CDMA/HSPA cellular base stations. The MW4IC001MR4's 800-2170 MHz bandwidth covers all major 3G/4G FDD bands, its 13 dB gain delivers a usable reference drive level, and its 38% drain efficiency at 2170 MHz keeps reference-path power consumption low. The internal active bias network sets IDQ near 12 mA without external gate resistors, and the 50 ohm input/output impedance simplifies the surrounding microstrip matching. Designers pair this part with DPD ASICs such as the NXP SC2200 to generate the inverse-distortion signature that cancels AM-AM and AM-PM distortion produced by the main Doherty PA.
おすすめ
CDMA2000 / 1xEV-DO Driver Stage
In CDMA2000 and 1xEV-DO base-station transmit chains, the MW4IC001MR4 can serve as a low-power driver or as a DPD reference amplifier that accurately reproduces the non-linearity of the downstream high-power LDMOS PA. Its 800-2170 MHz coverage accommodates the US Cellular (800 MHz) and PCS (1900 MHz) bands without board retuning, and its 50 ohm ports allow direct drop-in between filter and mixer stages. With 13 dB gain and 38% efficiency at 2170 MHz from a 28 V rail, the device delivers a clean reference signal that lets the DPD ASIC compute a precise inverse-distortion polynomial, which is critical for meeting the strict ACPR (-33 dBc at 1.25 MHz) and EVM (under 2.5%) limits of 3GPP2 CDMA2000.
おすすめ
GSM / EDGE Driver Reference Path
The MW4IC001MR4 is well suited as the reference amplifier in GSM/EDGE transceiver modules that need a small, broadband 28 V LDMOS device whose distortion profile mirrors that of the final-stage PA. Its 800-2170 MHz single-part coverage lets one reference design serve 900 MHz GSM, 1800 MHz DCS, and 1900 MHz PCS bands without any matching rework. The 13 dB gain at 2170 MHz provides ample drive level for the DPD comparator input, and the 38% efficiency keeps the reference branch thermally cool. The PLD-1.5 over-molded plastic package drops directly onto a standard cellular PA footprint and shares the same thermal copper pour used by the main amplifier, simplifying board layout and reducing BOM count in multi-band radio modules.
おすすめ
Multi-Band Cellular Repeater / Booster
In multi-band cellular repeaters and signal boosters that cover 800 MHz cellular, 900 MHz GSM, 1900 MHz PCS, and 2100 MHz W-CDMA in a single chassis, the MW4IC001MR4 provides a broadband 900 mW driver stage that can be band-switched with minimal matching changes. Its single 800-2170 MHz operating window replaces what would otherwise require four separate narrowband PAs, dramatically reducing the RF BOM. The 28 V supply aligns with the standard -48 V telecom rail after the DC-DC converter, and the PLD-1.5 plastic package is mechanically robust for field-deployed repeater enclosures. The 13 dB gain is sufficient to drive a higher-power follow-on stage while the 38% efficiency keeps DC power consumption reasonable in always-on repeater installations.
おすすめ
Wideband General-Purpose RF Power Block (Lab / Test)
Beyond cellular, the MW4IC001MR4 makes an excellent general-purpose 800-2170 MHz CW power block for laboratory test equipment, RF instrumentation prototypes, and bench amplifiers where a calibrated, broadband 900 mW source is needed. Engineers often pair the part with a fixed 30 dB attenuator and a bandpass filter to construct a flat-response RF stimulus source for EMC pre-compliance testing, antenna-range characterization, or receiver sensitivity sweeps. The 28 V single-supply operation simplifies test-fixture design and the PLD-1.5 package handles repeated bench top cycling without thermal issues. The internal active bias network eliminates gate-bias supply complexity, allowing the device to be driven directly from any 28 V bench supply with no additional sequencing hardware.
おすすめ
Aerospace / Defense RF Exciter Stage
Although optimized for cellular, the MW4IC001MR4's 800-2170 MHz bandwidth, 28 V LDMOS ruggedness, and aerospace-grade SnPb terminations also make it attractive for RF exciter and reference stages within aerospace and defense communication subsystems. Many defense radio platforms cover UHF satellite, L-band telemetry, and S-band datalink bands that fall inside or adjacent to this part's passband, and the tin/lead finish of the MR4 (as opposed to the lead-free NR4) is often required by defense procurement specifications that prohibit pure-tin finishes. Designers should consult the full NXP datasheet and derate appropriately for the -40C to +85C case-temperature operating envelope in avionics environments.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MW4IC001MR4 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MW4IC001NR4 | MW4IC001MR4G | MW4IC2230MBR4 |
|---|---|---|---|---|
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | PLD-1.5 | PLD-1.5 (same) | PLD-1.5 (same) | PLD-1.5 (same) |
| Output Power (CW) | 900 mW (29.5 dBm) | 900 mW (29.5 dBm) | 900 mW (29.5 dBm) | ~2 W (33 dBm) |
| Power Gain (2170 MHz) | 13 dB | 13 dB | 13 dB | ~13 dB |
| Drain Efficiency (2170 MHz) | 38 % | 38 % | 38 % | ~30 % |
| Drain Voltage (VDD) | 28 V | 28 V | 28 V | 28 V |
| Terminal Finish | Tin/Lead (Sn/Pb) | Matte tin (Pb-free) | Matte tin (Pb-free) | Matte tin (Pb-free) |
| RoHS Compliance | Non-compliant (SnPb) | Compliant (Pb-free) | Compliant (Pb-free) | Compliant (Pb-free) |
| Lifecycle Status | Last-time-buy | Last-time-buy / EOL | Last-time-buy / EOL | Last-time-buy / EOL |
主な差別化要因
- Single-part 800-2170 MHz coverage for multi-band DPD reference designs （vs Narrowband 900 MHz-only or 1900 MHz-only LDMOS PAs)
- Internal active bias eliminates external gate-bias supply （vs Discrete LDMOS transistors requiring external gate bias networks)
- Official NXP drop-in replacement with identical silicon （vs Cross-brand competitive parts requiring PCB rework)
設計ノート
Estimated: at CW Pout = 900 mW and VDD = 28 V, the typical DC input power is approximately VDD * IDQ_drive ~= 28 V * 90 mA = 2.5 W, so dissipation is on the order of 1.6 W. The PLD-1.5 plastic package relies on the PCB ground pour for heat removal; provide at least 1 square inch of 2 oz copper under the package thermal flag and avoid placing hot components within 5 mm of the flag area. Without this copper area, junction temperature can exceed 150C at full CW output, triggering thermal shutdown.
Use 50 ohm controlled-impedance microstrip traces on both RF_IN and RF_OUT leads with the reference plane set to the second inner layer; the PLD-1.5 lead pitch is 1.0 mm so trace width on standard 0.508 mm FR-4 is approximately 1.1 mm. Place 100 nF and 10 uF decoupling capacitors within 3 mm of the VDD pin to suppress RF leakage into the supply rail and prevent regrowth into the DPD loop. Avoid running digital or switching traces across the RF traces to keep digital noise out of the reference path.
Do not exceed the absolute maximum VDD of 32 V - any overshoot from a poorly regulated 28 V supply will permanently damage the LDMOS die. Always power up VGG (gate bias) before or simultaneously with VDD; applying drain voltage without gate bias can cause uncontrolled current spikes. The MR4 suffix denotes SnPb finish - confirm with your contract manufacturer that the SnPb bill of materials is compatible with their process before placing a production order, otherwise substitute the NR4 (Pb-free) variant.
For DPD reference applications, route the MW4IC001MR4 output through a fixed attenuator (typically 20-30 dB) before the DPD ASIC comparator input to prevent over-driving the sampler. Match the input and output to exactly 50 ohm; a 2:1 VSWR at either port can degrade the AM-AM/AM-PM distortion signature that the DPD loop is trying to cancel, producing residual ACPR that no amount of digital correction can remove.
コンプライアンス情報
SnPb terminal finish per NXP datasheet; substitute MW4IC001NR4 for RoHS-compliant production. Halogen-free plastic mold compound per NXP material declaration. AEC-Q100 not applicable - this is an RF power amplifier, not an automotive-qualified IC.
