MW6IC2420NBR1 - 2.45GHz 20W RF LDMOS Power Amplifier | NXP
部品番号: MW6IC2420NBR1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $42.5 | $42.50 |
| 10 | $38.25 | $382.50 |
| 100 | $33.8 | $3,380.00 |
| 500 | $29.5 | $14,750.00 |
| 1,000 | $26.4 | $26,400.00 |
MW6IC2420NBR1 概要
A power amplifier (PA) is the final active stage of a transmitter signal chain that converts a low-level RF input into a high-power signal delivered to the antenna. The MW6IC2420NBR1 belongs to the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family of RF power transistors, integrated as a multi-stage MMIC inside a single plastic over-molded package. Its on-chip input and output matching networks eliminate external microstrip matching components, reducing PCB complexity and shrinking board area in 2.4 GHz transmitters.
Key features include 19.5 dB typical gain at 2.17 GHz, 20 W CW output capability at 28 V, integrated bias networks, ESD protection on all ports, and broadband matched operation across 2110–2450 MHz. The 50 Ω nominal input/output impedance simplifies PCB layout, and the TO-272 WB-16 ceramic-plastic package offers a thermal resistance suitable for continuous-wave duty with proper heatsinking.
Architecturally, the device is a two-stage cascade of LDMOS FET cells biased in Class AB for linear amplification, with internal inter-stage matching and a harmonic termination network optimized for CW operation. Compared to a discrete FET-plus-matching design, the integrated approach reduces part count and improves unit-to-unit gain consistency.
Typical applications include 2.4–2.5 GHz ISM transmitters, microwave oven driver stages, Wi-Fi 802.11b/g power amplifiers, RF heating systems, and digital video broadcast uplink equipment. When designing with the MW6IC2420NBR1, ensure the heatsink keeps the flange temperature below the datasheet maximum and provide a 28 V regulated supply with adequate decoupling to suppress low-frequency oscillation.
ドロップイン代替品: MW6IC2420NBR1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
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MW6IC2420NBR1 最大定格＆電気的特性
| Product Type | RF LDMOS Integrated Power Amplifier |
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Operating Frequency | 2110 MHz to 2450 MHz (ISM 2.45 GHz primary) |
| Output Power (P1dB) | 20 W CW typical at 28 V |
| Power Supply Voltage | 26 V to 32 V (28 V nominal) |
| Small-Signal Gain | 19.5 dB typical at 2.17 GHz |
| 電源電流 | 210 mA typical (quiescent) |
| Input/Output Impedance | 50 ohm nominal |
| RF Type / Application | ISM 2.45 GHz, microwave links |
| パッケージ / ケース | TO-272 WB-16, 17-pin, flat leads |
| 実装タイプ | Surface Mount (with flange/heatsink tab) |
| Packaging | Tape & Reel |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Number of Stages | Multi-stage (2-stage cascade) |
| Operating Mode | CW (Continuous Wave) and pulsed |
| RoHS ステータス | Compliant |
| Lead Finish | Matte Tin (Sn) |
MW6IC2420NBR1 ピン構成
| ピン 1 | RFIN — RF input (50 ohm, AC-coupled) |
| ピン 2 | VGG1 — Gate bias stage 1 |
| ピン 3 | GND — Ground |
| ピン 4 | VGG2 — Gate bias stage 2 |
| ピン 5 | GND — Ground |
| ピン 6 | VDD1 — Drain supply stage 1 (28 V) |
| ピン 7 | GND — Ground |
| ピン 8 | VDD2 — Drain supply stage 2 (28 V) |
| ピン 9 | GND — Ground |
| ピン 10 | RFOUT — RF output (50 ohm, AC-coupled) |
| ピン 11 | GND — Ground |
| ピン 12 | NC — Not connected (per datasheet) |
| ピン 13 | NC — Not connected (per datasheet) |
| ピン 14 | GND — Ground |
| ピン 15 | NC — Not connected (per datasheet) |
| ピン 16 | GND — Ground |
| ピン 17 | NC — Not connected (per datasheet) |
| ピン FLANGE | GND/HEATSINK — Package flange - primary ground and thermal contact |
主な用途
MW6IC2420NBR1 の用途: 6 件s: 2.45 GHz ISM-Band Transmitters, Microwave Oven Driver Amplifier, Wi-Fi 802.11b/g Power Amplifier Front-End, RF Heating and Drying Systems, Digital Video Broadcast (DVB) Uplink Equipment, Industrial Process Heating RF Generators.
2.45 GHz ISM-Band Transmitters
The MW6IC2420NBR1 is purpose-built for the 2.4–2.5 GHz industrial-scientific-medical band, delivering 20 W CW output with on-chip matching that eliminates external microstrip networks. The 19.5 dB gain reduces the required driver-stage gain, and the 50 ohm input/output impedance simplifies PCB layout. In a typical ISM transmitter, it sits between a small-signal driver and the antenna, fed from a regulated 28 V rail through an LC decoupling network to suppress supply-borne noise that could otherwise modulate the output.
おすすめ
Microwave Oven Driver Amplifier
Microwave-oven magnetron drivers and RF heating systems require continuous-wave RF power in the 2.45 GHz ISM band where the MW6IC2420NBR1 is optimized. Its 20 W CW capability at 28 V directly drives a magnetron cathode stage in solid-state replacement designs, replacing older tube-based drivers. The LDMOS architecture provides long operational life and the integrated matching reduces the tune-up variability of magnetrons across production runs.
おすすめ
Wi-Fi 802.11b/g Power Amplifier Front-End
The MW6IC2420NBR1's 2.4 GHz coverage and 20 W capability make it a high-power final-stage option for industrial Wi-Fi amplifiers, outdoor mesh backhaul radios, and long-range bridge links. Its 19.5 dB gain reduces the number of driver stages required in the transmit chain. For 802.11b/g (DSSS/CCK modulation) the linearity is adequate, and the on-chip matching keeps board area small. Design note: the supply must be heavily decoupled to prevent OFDM/EVM degradation from 28 V rail ripple.
おすすめ
RF Heating and Drying Systems
Industrial RF heating at 2.45 MHz-equivalent ISM band uses the MW6IC2420NBR1 as a CW power source driving applicators for drying textiles, paper, food and ceramics. The 20 W CW rating and 28 V LDMOS architecture provide reliable continuous duty when the flange is properly heatsinked. The 50 ohm interface simplifies connection to standard coaxial applicator feeds, and the integrated matching reduces the per-unit RF tune-up time in volume manufacturing.
おすすめ
Digital Video Broadcast (DVB) Uplink Equipment
The MW6IC2420NBR1 covers the 2110–2170 MHz band where digital video broadcast uplink and terrestrial microwave links operate. Its 19.5 dB gain at 2.17 GHz and 20 W CW capability provide the final-stage power required for high-EIRP uplink transmitters. The LDMOS technology delivers the linearity needed for DVB modulation formats. The integrated matching reduces BOM and PCB area, which is critical in outdoor weatherproof transmitter housings where space and reliability matter.
おすすめ
Industrial Process Heating RF Generators
Plasma generators, RF-curing systems and induction-style 2.45 GHz process heaters benefit from the MW6IC2420NBR1's 20 W CW capability and integrated matching. The LDMOS device simplifies RF generator design compared to discrete-FET-plus-microstrip implementations, reducing assembly time and tuning cost. Proper thermal management is essential: at 20 W CW output, several watts of internal dissipation must be removed through the package flange via a heatsink with thermal-interface material.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MW6IC2420NBR1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MW6IC2420NB | MW6IC2420GN | A2I22D050N |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-16 (17-pin, flat leads) | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 family - same footprint |
| Operating Frequency | 2110–2450 MHz | 2110–2450 MHz | 2110–2450 MHz | 2400–2500 MHz (ISM) |
| Supply Voltage | 26–32 V (28 V nom) | 26–32 V | 26–32 V | 28 V typ |
| Technology | LDMOS 2-stage | LDMOS 2-stage | LDMOS 2-stage | LDMOS Doherty |
| Packaging | Tape & Reel (BR1) | Bulk (no reel) | Tape & Reel | Tape & Reel |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
主な差別化要因
- On-chip input/output matching eliminates external microstrip networks （vs Discrete 2.4 GHz LDMOS FET (e.g., MRF245))
- Two-stage integrated cascade with internal inter-stage matching （vs Single-stage discrete LDMOS designs)
- Wide 2110–2450 MHz coverage in one part （vs Narrow-band discrete designs)
設計ノート
At 20 W CW RF output and 28 V supply, the MW6IC2420NBR1 dissipates several watts internally and requires a substantial heatsink attached to the package flange. Use a high-quality thermal-interface material (e.g., thermal pad rated > 1 W/m-K or thermal grease with a thin bond line) and mount the flange with the manufacturer-specified torque to minimize thermal resistance. Estimated: with 20 W output and a typical PAE figure around 50%, internal dissipation is approximately 18–22 W at full drive; the flange temperature must be monitored in production to verify the heatsink design meets the datasheet's junction temperature limit.
Use a multi-layer PCB with a continuous ground plane beneath the TO-272 footprint and 50 ohm microstrip or coplanar-waveguide traces for RFIN and RFOUT. Place the 28 V drain decoupling capacitors (typically a parallel combination of 100 nF ceramic and 10 µF tantalum or electrolytic) within a few millimeters of the VDD pins to suppress supply-borne low-frequency oscillation. Keep gate-bias traces short and shielded from the RF path to prevent feedback-induced instability.
The 28 V supply must be regulated with less than 100 mVpk-pk ripple across the full operating bandwidth; ripple on the drain modulates the RF output and degrades ACPR/EVM. Add a ferrite bead plus LC low-pass filter at the supply feed to the board. Include a soft-start circuit (or controlled ramp on the gate bias supply VGG) to limit inrush current when the PA is enabled, which prevents transient overstress of the LDMOS drain junctions during power-up sequencing.
Common pitfalls include exceeding the 32 V absolute maximum on the drain supply, omitting gate-bias sequencing (which can cause the device to draw excessive current on power-up), and operating the RF input above the datasheet's maximum drive level. Always verify the heatsink is properly attached before applying RF drive, and confirm the load VSWR is within 2:1 across the operating band - higher VSWR can drive the LDMOS into secondary breakdown.
コンプライアンス情報
RoHS and REACH compliance per NXP product page; matte-tin lead finish; lead-free and halogen-free per NXP material declaration. AEC-Q100 not applicable - this is an RF power amplifier IC for industrial/ISM/commercial markets, not an automotive-qualified part.
