S1M-E3/61T - 1A 1000V SMA Glass Passivated Rectifier | Vishay
部品番号: S1M-E3/61T ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.3 | $3.00 |
| 100 | $0.18 | $18.00 |
| 500 | $0.13 | $65.00 |
| 1,000 | $0.1 | $100.00 |
| 5,000 | $0.08 | $400.00 |
S1M-E3/61T 概要
A standard recovery rectifier is a two-terminal PN-junction diode whose primary function is to convert alternating current into unidirectional (DC) current by allowing forward conduction during one half of each AC cycle and blocking reverse current during the other. Standard recovery rectifiers such as the S1M family operate at line frequencies and therefore do not need an ultrafast reverse-recovery specification; they are the workhorses of low-frequency power supplies, bridge rectifiers, polarity protection, and DC output stages. Within the broader component taxonomy, this part sits at: rectifier -> power diode -> discrete semiconductor -> semiconductor device. Vishay's "S1" prefix designates the 1 A, surface-mount glass-passivated SMA product family, with letter suffixes (A, B, D, G, J, K, M) indicating reverse-voltage grades from 50 V up to 1000 V.
Key features include a glass-passivated chip junction for stable leakage and long-term reliability, matte tin-plated leads solderable per J-STD-002 and JESD 22-B102, low forward voltage drop of 1.1 V maximum at 1 A, low reverse leakage, and a high forward surge capability of 30 A (8.3 ms half-sine). The E3 suffix denotes RoHS-compliant commercial grade with matte tin leads; the HE3_A equivalent adds AEC-Q101 automotive qualification. The molded SMA case uses a UL94V-0 flammability-rated epoxy compound that meets MSL level 1 per J-STD-020, allowing unlimited floor life and simplifying production logistics.
In typical circuit roles the S1M-E3/61T serves as a low-frequency bridge element in AC/DC adapters, as a freewheeling diode across relay coils or motor windings, as a reverse-polarity protection element on DC inputs, and as a secondary-side rectifier following a switching converter. Designers prefer this part where the input voltage can reach 1000 V reverse standoff and the DC output current stays below 1 A continuous, while still tolerating 30 A inrush transients such as cold-lamp filament surge or motor start-up.
When selecting the S1M-E3/61T, confirm that the application's peak inverse voltage stays below 1000 V with adequate derating, and that the average forward current is below 1 A continuous (1.5 A with proper thermal copper pour). For designs that need only 50 V to 800 V standoff, the lower-voltage S1A through S1K family members offer identical footprint and slightly lower forward drop; for AEC-Q101 automotive requirements, choose the HE3_A suffix instead. The single-diode SMA footprint also makes the S1M easy to place in parallel for higher current or to combine into a discrete bridge.
ドロップイン代替品: S1M-E3/61T — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
S1MHE3_A/61T
✅ ドロップイン📋 参考代替品（カタログ未掲載）
S1M-E3/5AT
✅ ドロップイン📋 参考代替品（カタログ未掲載）
S1J-E3/61T
✅ ドロップイン📋 参考代替品（カタログ未掲載）
S1M
✅ ドロップイン📋 参考代替品（カタログ未掲載）
S1M
✅ ドロップイン📋 参考代替品（カタログ未掲載）
S1MSWFQ-7
✅ ドロップイン📋 参考代替品（カタログ未掲載）
US1M-E3/61T
✅ ドロップイン📋 参考代替品（カタログ未掲載）
S1M-E3/61T 最大定格＆電気的特性
| Diode Type | Standard Recovery Rectifier |
| Configuration | Single |
| Reverse Voltage (Vr) Max | 1000 V |
| Average Rectified Forward Current (Io) | 1.0 A |
| Forward Voltage (Vf) Max @ If | 1.1 V @ 1 A |
| Peak Forward Surge Current (Ifsm) | 30 A (8.3 ms half-sine) |
| 動作接合温度範囲 | -55C to +150C |
| パッケージ / ケース | DO-214AC (SMA) |
| 実装タイプ | Surface Mount |
| Molding Compound Flammability | UL94V-0 |
| MSLレベル | Level 1 per J-STD-020 |
| Lead Finish | Matte tin plated (solderable per J-STD-002, JESD 22-B102) |
| RoHS ステータス | RoHS-compliant (E3 suffix) |
| AEC-Q101 Qualification | Not qualified (commercial grade; HE3_A variant is qualified) |
S1M-E3/61T ピン構成
| ピン 1 | A (Anode) — Anode terminal; connect to lower potential side in forward conduction |
| ピン 2 | K (Cathode) — Cathode terminal; marked with polarity band on package body, connect to higher potential side |
主な用途
S1M-E3/61T の用途: 7 件s: AC/DC Bridge Rectifier Output Stage, Freewheeling Diode for Relays and Solenoids, Reverse-Polarity Protection on DC Inputs, Industrial Control and Automation Power Rails, LED Lighting Driver Output Rectification, Battery Charger Secondary Rectification, Automotive 12 V/24 V Subsystem Rectification.
AC/DC Bridge Rectifier Output Stage
The S1M-E3/61T is well-suited as an individual element in a discrete full-wave bridge for low-power AC/DC adapters and wall-plug power supplies. Its 1000 V reverse standoff comfortably exceeds the peak of a 230 Vrms mains (325 Vpk) plus 20% line transients, while the 1 A average forward current supports 20-30 W adapter outputs. The glass-passivated die provides stable leakage across the -55C to +150C junction range, critical when the diode operates near the upper temperature limit on a confined adapter PCB. Pairing four S1M-E3/61T in a bridge delivers ~3 A DC output with adequate heatsinking; a single chip is also used as the secondary-side rectifier following a switching transformer.
おすすめ
Freewheeling Diode for Relays and Solenoids
The S1M-E3/61T is widely used as a flyback/freewheeling diode across relay coils, solenoid valves, and small motor windings to suppress inductive kickback. Its 1000 V Vrrm absorbs the high-Volt reverse spike generated when an inductor is de-energized, protecting driver transistors or MOSFETs from avalanche breakdown. The 1 A continuous rating matches typical coil currents below 1 A, and the 30 A peak surge handles the brief recirculation pulse without failure. The low-profile SMA package allows placement directly across the coil terminals, minimizing loop area and EMI; the glass-passivated junction maintains low leakage even after years of thermal cycling.
おすすめ
Reverse-Polarity Protection on DC Inputs
The S1M-E3/61T serves as a low-loss series or shunt reverse-polarity protection element on battery-powered equipment, USB-C sink inputs, and 24 V industrial DC rails. When placed in series with the input, its 1.1 V forward drop is acceptable for sub-1 A loads and is far lower than the 0.5-1 V typical of P-channel MOSFET solutions at light loads, while still blocking reverse battery connection up to 1000 V. The SMA footprint occupies less board area than a TO-220 diode, and the matte tin leads survive multiple lead-free reflow profiles thanks to MSL 1 rating. Designers also use the S1M-E3/61T in shunt configuration across the input capacitor as a sacrificial clamp if reverse polarity is brief.
おすすめ
Industrial Control and Automation Power Rails
In PLCs, sensor interfaces, and industrial automation I/O modules, the S1M-E3/61T rectifies 24 VAC inputs and provides protection on 24-48 VDC supply rails. Its 1000 V reverse standoff tolerates inductive spikes from long cable runs and motor-driven contactors, while the 1 A current handles auxiliary relay power and indicator circuits. The UL94V-0 molding compound and full RoHS compliance meet industrial safety and environmental requirements, and the DO-214AC footprint is compatible with high-speed automated pick-and-place assembly for volume manufacturing.
おすすめ
LED Lighting Driver Output Rectification
In low-power LED drivers and emergency lighting ballasts, the S1M-E3/61T operates as a secondary-side rectifier after a small switch-mode transformer, feeding the LED string with smoothed DC. Its 1.1 V Vf at 1 A keeps conduction losses manageable in 0.5-1 A LED strings, while its 1000 V reverse rating supports universal-input (90-277 VAC) designs. The compact SMA package simplifies the secondary-side layout, and the 30 A surge current handles inrush when cold LEDs first turn on. The part's UL94V-0 molding compound meets luminaire safety standards.
おすすめ
Battery Charger Secondary Rectification
The S1M-E3/61T functions as a low-cost secondary-side rectifier in 6 V/12 V lead-acid and lithium-ion battery chargers under 1 A charge current. After the flyback transformer secondary winding, the diode's 1000 V standoff handles reflected voltage spikes from the primary switch, while the 1.1 V forward drop is acceptable given the charger's regulation loop. The glass-passivated die and UL94V-0 case provide long-term reliability in enclosed charger housings with elevated ambient temperature. For higher-current chargers above 1 A, designers parallel two S1M-E3/61T parts or step up to the S2M/S3M family.
おすすめ
Automotive 12 V/24 V Subsystem Rectification
Although the S1M-E3/61T itself is commercial-grade, designers use it as a prototype rectifier in 12 V/24 V automotive subsystems, body controllers, and accessory power outlets where AEC-Q101 is not yet mandatory. Its 1000 V Vrrm exceeds the worst-case load-dump transient (often 35-40 V on 12 V systems, far below 1000 V), and the 30 A surge handles motor start-up events. For production automotive designs, the HE3_A suffix variant (S1MHE3_A/61T) provides the same electrical performance with AEC-Q101 qualification, enabling direct drop-in replacement on the same PCB footprint.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: S1M-E3/61T — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | S1MHE3_A/61T | S1M-E3/5AT | S1J-E3/61T | S1M (onsemi) | S1M (Diodes Inc) |
|---|---|---|---|---|---|---|
| Brand | Vishay Intertechnology | Vishay Intertechnology | Vishay Intertechnology | Vishay Intertechnology | onsemi | Diodes Incorporated |
| Package | DO-214AC (SMA) | DO-214AC (SMA) - same | DO-214AC (SMA) - same | DO-214AC (SMA) - same | DO-214AC (SMA) - same | DO-214AC (SMA) - same |
| Reverse Voltage (Vrrm) | 1000 V | 1000 V | 1000 V | 600 V | 1000 V | 1000 V |
| Average Forward Current (Io) | 1.0 A | 1.0 A | 1.0 A | 1.0 A | 1.0 A | 1.0 A |
| Forward Voltage (Vf) Max @ 1 A | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Recovery Type | Standard | Standard | Standard | Standard | Standard | Standard |
| AEC-Q101 Qualified | No (commercial) | Yes | No (commercial) | No (commercial) | No (commercial) | No (commercial) |
| RoHS Compliance | Yes (E3 suffix) | Yes (HE3_A suffix) | Yes (E3 suffix) | Yes (E3 suffix) | Yes | Yes |
| Unit Price (qty 1000) | ~$0.10 | ~$0.12 | ~$0.10 | ~$0.10 | ~$0.10 | ~$0.11 |
主な差別化要因
- Highest reverse-voltage grade (1000 V) in the S1 SMA family （vs S1J-E3/61T (Vishay))
- Commercial-grade pricing with automotive-grade option （vs S1MHE3_A/61T (Vishay AEC-Q101))
- Standard recovery for low-frequency applications （vs US1M-E3/61T (Vishay ultrafast))
- Multi-source availability across manufacturers （vs Single-source S1MHE3_A/61T variant)
設計ノート
Estimated: At 1.1 V Vf and 1 A continuous forward current, the S1M-E3/61T dissipates approximately 1.1 W of conduction loss. The DO-214AC SMA package has a typical junction-to-ambient thermal resistance of approximately 80 C/W on a standard 1-oz FR-4 PCB, producing an estimated 88C temperature rise above ambient. For sustained 1 A operation, provide at least 100 mm^2 of copper pour on the cathode pad to keep the junction below 150C; if the application runs continuously at the maximum rating, reduce the average current to 0.7-0.8 A.
Use the SMA recommended land pattern from Vishay datasheet 88711, with the cathode pad approximately 4.6 mm x 2.0 mm and the anode pad approximately 2.0 mm x 1.5 mm. Place the diode close to the source of switching transients (transformer secondary or coil terminal) to minimize trace inductance, which can otherwise ring above 1000 V and exceed Vrrm during fast turn-off events.
Do not use the S1M-E3/61T as the secondary-side rectifier in a high-frequency switch-mode power supply above approximately 50 kHz; the standard reverse-recovery time of glass-passivated rectifiers is too slow and will dissipate excessive switching loss. For high-frequency SMPS secondary rectification, choose the US1M-E3/61T (ultrafast, 75 ns trr) in the same SMA footprint instead. Also avoid exceeding 30 A peak surge - the part can survive this only for an 8.3 ms half-sine pulse, not continuous or repetitive peaks.
When using the S1M-E3/61T as a freewheeling diode across a relay coil, place it physically adjacent to the coil terminals to minimize the high-dV/dt loop area. Long traces between the coil and the freewheeling diode will create radiated EMI from the inductive turn-off spike; a 10 mm trace loop is typically acceptable, but anything above 30 mm may require an RC snubber in parallel with the diode.
コンプライアンス情報
RoHS compliant per E3 suffix and Vishay product page; AEC-Q101 not qualified on the commercial E3 grade (choose S1MHE3_A/61T for automotive). J-STD-020 MSL 1, J-STD-002 solderable leads, JESD 201 class 2 whisker rated. AEC-Q100 listed as not_qualified because AEC-Q100 applies to ICs; the equivalent for discretes is AEC-Q101, which this part does not hold on the E3 grade.
