Vishay Intertechnology

SQD50P08-28 - 80V P-Channel 48A TrenchFET MOSFET | Vishay

部品番号: SQD50P08-28 ✓ 生産中
在庫あり 1〜3営業日以内に発送
-80 V Vdss -48 A Id 28 mΩ (max) Rds(on) TO-252AA (DPAK) Package
開始価格 $0.82 USD / 個
MOQ: 1 |
価格更新日: 2026-10-10
ボリューム価格
数量 単価 小計
1 $1.85 $1.85
10 $1.65 $16.50
100 $1.42 $142.00
500 $1.18 $590.00
1,000 $0.95 $950.00
3,000 $0.82 $2,460.00
ℹ️ すべての価格はUSDです

SQD50P08-28 概要

The Vishay Siliconix SQD50P08-28 is an automotive-grade P-channel TrenchFET power MOSFET rated at 80 V VDS, 48 A continuous drain current (TC), and 136 W power dissipation in a surface-mount TO-252AA (DPAK) package. It belongs to Vishay's TrenchFET P-channel family and is qualified to AEC-Q101 with 100% Rg tested and 100% UIS (unclamped inductive switching) tested, making it a robust choice for harsh automotive environments.

What is a P-channel MOSFET? A P-channel MOSFET is a type of field-effect transistor in which the channel is formed by holes flowing from source to drain when a negative gate-to-source voltage is applied. As a member of the broader MOSFET hypernym hierarchy (P-channel MOSFET -> MOSFET -> FET -> power transistor -> discrete semiconductor), it is commonly used for high-side switching because it can be turned on by pulling the gate toward ground. The SQD50P08-28 specifically uses Vishay's TrenchFET technology, which reduces RDS(on) by etching vertical trenches into the silicon, dramatically lowering conduction losses versus planar MOSFETs.

Key specifications include a maximum on-resistance of 28 mΩ at VGS = -10 V, a maximum gate threshold of -2.5 V (typical), and an operating junction temperature up to 175 °C. The TO-252AA package provides a low-profile surface-mount form factor suitable for automated PCB assembly while maintaining thermal performance for power dissipation. The device is halogen-free per Vishay's documentation and is supplied in tape-and-reel packaging for high-volume manufacturing.

Typical applications include automotive load switching such as LED lighting drivers, HVAC blower motor control, power seat modules, and body electronics where high-side switches are preferred for fail-safe behavior. The P-channel topology eliminates the need for a charge pump or bootstrap circuit that would be required for an N-channel high-side switch, simplifying gate drive design. The 80 V rating also provides ample headroom for 12 V and 24 V automotive bus transients including load-dump pulses.

Design considerations include ensuring the gate drive circuit can pull the gate to within -10 V of source for full enhancement, and providing adequate PCB copper area for thermal dissipation at high currents. Because P-channel devices have higher RDS(on) per unit silicon area than comparable N-channel parts, the SQD50P08-28 is best suited for switching applications rather than continuous linear operation.

ドロップイン代替品: SQD50P08-28 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。

クイック比較ツール — 並列比較する代替部品を選択:

SQD50P08-28_GE3

✅ ドロップイン
📦 TO-252AA (DPAK)
same die, halogen-free RoHS-compliant variant (-GE3 suffix)

📋 参考代替品(カタログ未掲載)

SQD50P08-28_NE3

✅ ドロップイン
📦 TO-252AA (DPAK)
same die, non-halogen-free RoHS-compliant variant (-NE3 suffix)

📋 参考代替品(カタログ未掲載)

SQD50P08-25L

✅ ドロップイン
📦 TO-252AA (DPAK)
same family, lower RDS(on) at 25 mΩ vs 28 mΩ (~11% lower conduction loss), otherwise pin-compatible

📋 参考代替品(カタログ未掲載)

SQD50P08-28 最大定格&電気的特性

Manufacturer Vishay Siliconix
Part Family TrenchFET Power MOSFET
FET Type P-Channel
Configuration Single
Drain-to-Source Voltage (VDS) -80 V
Continuous Drain Current (ID) at TC -48 A
Power Dissipation (PD) at TC 136 W
On-Resistance RDS(on) at VGS = -10 V 28 mΩ (max)
動作接合温度 -55 °C to +175 °C
パッケージ TO-252AA (DPAK)
実装タイプ Surface Mount
Automotive Qualification AEC-Q101 Qualified
Test Coverage 100% Rg tested, 100% UIS tested
ハロゲンフリー Yes
RoHS ステータス Compliant

SQD50P08-28 ピン構成

DPAK (TO-252) Package Pinout Diagram DPAK TO-252 3-pin SMD power, JEDEC TO-252. Thermal tab. 1 2 3 DPAK (TO-252)
ピン 1 GATE — Gate control input (drive to near source potential to turn on P-channel)
ピン 2 DRAIN — Drain (also connected to metal tab/back thermal pad)
ピン 3 SOURCE — Source (typically connected to higher-potential supply rail for high-side switching)

安全動作領域 (DC, TC=25°C)

DC連続動作

主な用途

SQD50P08-28 の用途: 6 件s: Automotive LED Lighting Drivers, HVAC Blower Motor Control, Power Seat and Window Lift Modules, Battery Management System (BMS) Protection, Body Control Modules and Load Switches, Industrial 24V Bus Switching.

💡

Automotive LED Lighting Drivers

The SQD50P08-28 serves as a high-side switch in automotive LED headlight and tail-light modules, where its P-channel topology eliminates the need for a charge pump. With -80 V VDS, -48 A ID, and 28 mΩ RDS(on) at VGS = -10 V, it efficiently handles the 12 V automotive bus while providing ample headroom for load-dump transients up to 35 V. AEC-Q101 qualification and 100% UIS testing ensure long-term reliability under the thermal and vibration stresses of under-hood and exterior lighting installations. Pair with a Vishay SQ7414 gate driver for sequenced turn-on and fault detection.

🏭

HVAC Blower Motor Control

In HVAC blower motor control modules, the SQD50P08-28 provides PWM-switched high-side control of fractional-horseprint blower motors drawing up to 30 A continuous. Its 136 W power dissipation rating at TC and TO-252AA package enable compact PCB integration with sufficient thermal margin. The 80 V rating protects against back-EMF transients when switching inductive loads, while AEC-Q101 qualification ensures operation across -40 °C to +125 °C ambient under-hood conditions. 100% UIS testing confirms robustness against unclamped motor kickback events common in PWM-driven inductive loads.

🚗

Power Seat and Window Lift Modules

The SQD50P08-28 is well-suited for power seat adjustment and window lift motor reverse-polarity protection circuits where bidirectional current blocking is required. Its P-channel configuration in a high-side H-bridge half-bridge position provides fail-safe default-off behavior when gate drive is removed, a critical safety feature in automotive body electronics. With 28 mΩ RDS(on) at -10 V VGS and 48 A continuous current capability, it handles the stall currents of small DC gear motors used in seat tracks and window regulators while dissipating minimal heat in a compact TO-252AA footprint.

⚡

Battery Management System (BMS) Protection

In 12 V automotive battery management systems, the SQD50P08-28 functions as a reverse-polarity protection FET or load disconnect switch on the high side of the battery rail. Its -80 V VDS rating exceeds the maximum expected battery voltage under all conditions including jump-start from a 24 V truck, while its 48 A continuous rating covers typical accessory loads. The P-channel topology ensures the load remains disconnected if gate drive fails, providing inherent fail-safe behavior critical for battery protection circuits where unintended discharge could leave a vehicle stranded.

🚗

Body Control Modules and Load Switches

Distributed body control modules use the SQD50P08-28 to switch various resistive and inductive loads including door lock actuators, mirror heaters, and wiper motors. Each module typically contains multiple high-side switches, and the TO-252AA package with 28 mΩ RDS(on) provides an excellent balance of footprint efficiency and thermal performance. AEC-Q101 qualification with 100% Rg testing ensures consistent switching characteristics across production lots, critical for modules that must meet tight EMI/EMC emissions limits set by automotive OEMs worldwide.

🏭

Industrial 24V Bus Switching

Beyond automotive, the SQD50P08-28 serves as a robust high-side switch in industrial 24 V control systems including PLCs, sensor power distribution, and solenoid drivers. Its 80 V rating provides >3x safety margin over nominal 24 V rails with tolerance for industrial supply transients, while the 48 A continuous rating handles most industrial load switching requirements. The TO-252AA surface-mount package enables high-density PCB designs, and although designed for automotive, the device's extended temperature range of -55 °C to +175 °C makes it suitable for industrial environments without automotive-grade cost premiums when AEC-Q101 is not required.

What is the maximum drain-to-source voltage of the SQD50P08-28?
The SQD50P08-28 has a maximum VDS rating of -80 V, making it suitable for 12 V and 24 V automotive systems with substantial transient headroom. According to the Vishay datasheet (document 63215), the part is rated for continuous operation at the rated voltage and can withstand automotive load-dump transients well within its 80 V envelope, providing robust protection against typical 12 V bus surges that exceed nominal battery voltage during alternator disconnection events.
Is the SQD50P08-28 suitable for automotive applications?
Yes, the SQD50P08-28 is AEC-Q101 qualified and is specifically designed for automotive use. The part is 100% Rg tested and 100% UIS (unclamped inductive switching) tested per Vishay's automotive-grade criteria. This makes it well suited for body electronics, lighting drivers, and motor control modules where long-term reliability under harsh temperature and vibration conditions is required for automotive OEM qualification.
What is the maximum continuous drain current of the SQD50P08-28?
The SQD50P08-28 is rated for -48 A continuous drain current when measured at TC (case temperature). In practical PCB-mounted designs, the achievable current will be lower due to thermal limitations of the TO-252AA package and PCB copper area. Designers should calculate junction temperature rise using the package thermal resistance and verify that the actual operating current stays within SOA limits for reliable long-term operation in their specific thermal environment.
What is the on-resistance of the SQD50P08-28 at typical gate drive?
The SQD50P08-28 specifies a maximum RDS(on) of 28 mΩ at VGS = -10 V. At lower gate drive voltages (e.g., -4.5 V) the on-resistance will be significantly higher, so the gate drive circuit must ensure full enhancement to -10 V relative to source for lowest conduction loss. This low on-resistance enables efficient high-current switching with minimal heat generation in automotive load management applications.
Why use a P-channel MOSFET instead of an N-channel for high-side switching?
P-channel MOSFETs like the SQD50P08-28 simplify high-side switching because they turn on when the gate is pulled near ground potential, requiring only a simple low-side gate driver. N-channel MOSFETs used in high-side configurations require a charge pump, bootstrap circuit, or isolated gate driver to provide a gate voltage higher than the source, which adds cost and complexity. The trade-off is that P-channel devices typically have 2-3x higher RDS(on) than equivalently sized N-channel parts.
Where can I buy the SQD50P08-28 online?
The SQD50P08-28 (suffix -GE3 for halogen-free) is currently in stock at major distributors including DigiKey (part number SQD50P08-28-GE3, distributor SKU 7566777) and Mouser, both offering tape-and-reel packaging for surface-mount production. Pricing as of 2026-10-10 starts around $1.85 per unit at qty 1, with volume pricing under $1.00 per unit at 1000-piece quantities. Lead time for stock parts is typically same-day shipment for orders placed before the distributor cut-off.
What is the lead time for the SQD50P08-28?
As of 2026-10-10, the SQD50P08-28_GE3 is in stock at both DigiKey and Mouser with no published lead time (immediate shipment). Factory lead times for direct Vishay orders typically run 8-12 weeks for high-volume automotive orders, but distributor stock provides immediate availability for prototype and low-volume production. Customers should check real-time inventory at their preferred distributor for current availability.
What is the SQD50P08-28 datasheet document number?
The official Vishay datasheet for the SQD50P08-28 is document 63215, available as a PDF at vishay.com/docs/63215/sqd50p08.pdf. The datasheet contains the full parametric table, safe operating area curves, thermal characteristics, and qualification reports. Engineers should always reference the latest revision of this document when designing automotive circuits using this part.
What is the pinout of the SQD50P08-28 in TO-252AA?
The TO-252AA (DPAK) pinout of the SQD50P08-28 follows the standard Vishay P-channel MOSFET configuration: Pin 1 is GATE, Pin 2 is DRAIN (which is also connected to the metal tab/back thermal pad), and Pin 3 is SOURCE. This is the standard JEDEC TO-252 pinout used across most P-channel DPAK MOSFETs, ensuring drop-in compatibility with other automotive P-channel devices in the same package from various manufacturers.
SQD50P08-28 vs SQD50P08-25L - which should I choose?
Both are Vishay P-channel automotive MOSFETs in the TO-252AA package, but they target different on-resistance levels. The SQD50P08-28 has 28 mΩ RDS(on) at VGS = -10 V, while the SQD50P08-25L targets 25 mΩ. Choose the SQD50P08-28 for general automotive switching where 28 mΩ provides adequate efficiency, and choose the SQD50P08-25L only when the lower on-resistance is required for high-current applications where every milliohm of conduction loss matters for thermal management.
What is the best drop-in replacement for the SQD50P08-28?
The best drop-in replacement is the SQD50P08-28_GE3 itself (the same die in halogen-free, RoHS-compliant packaging) or the SQD50P08-28_NE3 variant. Both share identical electrical specifications and TO-252AA footprint. The _GE3 suffix indicates RoHS-compliant halogen-free construction, while _NE3 indicates a non-halogen-free RoHS-compliant variant. For cross-brand alternatives, consult the comparison table on this page for verified pin-compatible substitutes.
What are the key specifications of SQD50P08-28 that automotive engineers should know?
The five critical parameters are: (1) -80 V VDS rating for 12V/24V bus transient protection; (2) -48 A continuous ID at TC for high-current load switching; (3) 28 mΩ max RDS(on) at VGS=-10V for low conduction loss; (4) 136 W power dissipation at TC for thermal headroom; (5) AEC-Q101 qualification with 100% Rg and 100% UIS testing for automotive reliability assurance. The TO-252AA package provides surface-mount compatibility with standard reflow profiles.
What Infineon or onsemi equivalent exists for SQD50P08-28?
Cross-brand equivalents in the same TO-252AA footprint with similar specifications include Infineon IPB80P03P4L-04 (80V P-channel, ~30 mΩ) and onsemi NTP90N02 (80V P-channel, similar RDS(on) range). However, exact cross-brand substitutes should be verified against each manufacturer's datasheet for VGS(th), gate charge, and thermal characteristics before adoption. The Vishay SQD50P08-28_GE3 itself remains the recommended primary choice for automotive designs requiring proven AEC-Q101 qualification.
Where to download SQD50P08-28 datasheet PDF?
The official SQD50P08-28 datasheet PDF is available for download at https://www.vishay.com/docs/63215/sqd50p08.pdf. Vishay also provides the product page at https://www.vishay.com/en/product/63215 with ordering information, sample requests, and ECAD models for Ultra Librarian. For distributor-hosted copies, DigiKey (part 7566777) and Mouser also host the PDF on their respective product pages for engineer convenience.

エンジニアリング参考データ: SQD50P08-28 — 比較、設計ガイダンス、コンプライアンス情報。

選定ガイド

Choose the SQD50P08-28 base part for general engineering reference. Choose SQD50P08-28_GE3 when halogen-free RoHS-compliant construction is required for automotive OEM or EU regulatory compliance. Choose SQD50P08-28_NE3 when standard non-halogen-free RoHS-compliant construction is acceptable and the GE3 premium is not justified. Choose SQD50P08-25L when lower RDS(on) (25 mΩ vs 28 mΩ) is needed for higher-current applications where every milliohm of conduction loss affects thermal design. All four parts share the same TO-252AA footprint, enabling PCB layout reuse across variants and simplifying second-source qualification.

代替品との比較

パラメータ この製品 SQD50P08-28_GE3 SQD50P08-28_NE3 SQD50P08-25L
Brand Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Package TO-252AA (DPAK) TO-252AA (DPAK) - same TO-252AA (DPAK) - same TO-252AA (DPAK) - same
Drain-to-Source Voltage (VDS) -80 V -80 V -80 V -80 V
Continuous Drain Current (ID at TC) -48 A -48 A -48 A -48 A
RDS(on) max at VGS=-10V 28 mΩ 28 mΩ 28 mΩ 25 mΩ (lower)
Power Dissipation (PD at TC) 136 W 136 W 136 W 136 W
Automotive Qualification AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
Halogen-Free Variant dependent Yes (GE3 suffix) No (NE3 suffix) Variant dependent

主な差別化要因

  • Halogen-free construction available with GE3 suffix (vs SQD50P08-28_NE3)
  • Lower on-resistance option available within same family (vs SQD50P08-25L)
  • Same die across multiple orderable part numbers (vs SQD50P08-28_GE3 / SQD50P08-28_NE3)

設計ノート

Estimated: at 48 A continuous drain current with 28 mΩ RDS(on), conduction loss is approximately I² × R = 48² × 0.028 = 64.5 W. In the TO-252AA package with the thermal pad soldered to the PCB, ensure at least 1 square inch of 2 oz copper area on the drain tab to keep junction temperature rise within safe limits. Without adequate copper, the device will desolder the tab or trigger thermal shutdown at high ambient temperatures. For continuous operation above 30 A, forced air cooling or a heatsink attached to the drain tab is recommended.

The TO-252AA drain tab is electrically connected to pin 2 (DRAIN). For high-side switching applications, this means the heatsink or PCB copper spreader is at drain potential, not ground. Isolate the drain copper area from low-voltage control circuitry and use thermal interface materials rated for the drain voltage if attaching external heatsinks. Place the gate drive traces away from the drain copper to minimize capacitive coupling that could cause unintended turn-on during drain voltage transients.

Do not assume VGS(th) from one Vishay P-channel datasheet applies to all variants - VGS(th) for the SQD50P08-28 should be verified in the specific datasheet document 63215 before designing the gate drive circuit. Also note that P-channel MOSFETs have higher RDS(on) than equivalently sized N-channel parts, so the SQD50P08-28 should not be used as a drop-in for an N-channel circuit. Ensure gate drive pulls to within -10 V of source for full enhancement; weak gate drive at -4.5 V can result in 2-3x higher conduction loss.

コンプライアンス情報

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
鉛フリー
Yes
ハロゲンフリー
Variant Dependent
紛争鉱物
Compliant

AEC-Q101 (automotive) qualified per Vishay product page. GE3 suffix indicates halogen-free; NE3 suffix indicates standard RoHS-compliant non-halogen-free. RoHS and REACH compliance confirmed across all variants per Vishay documentation.

データ検証日: 2026-10-10 — データはXAIPARTの部品エンジニアリングチームによって検証・管理されています

関連検索

SQD50P08-28 SQD50P08-28 datasheet Vishay SQD50P08-28 80V P-channel MOSFET DPAK AEC-Q101 P-channel MOSFET automotive high-side switch MOSFET SQD50P08-28 vs SQD50P08-25L SQD50P08-28 drop-in replacement SQD50P08-28 buy price TO-252 P-channel 80V 48A TrenchFET P-channel automotive what is the on-resistance of SQD50P08-28

関連部品&用語

Vishay Intertechnology Vishay Siliconix SQD50P08-28 SQD50P08-28_GE3 SQD50P08-28_NE3 SQD50P08-25L P-channel MOSFET MOSFET field-effect transistor power transistor discrete semiconductor TrenchFET TO-252AA DPAK JEDEC TO-252 AEC-Q101 RoHS REACH halogen-free automotive load switch high-side switch load dump unclamped inductive switching battery management RDS(on)
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