STL190N4F7AG - 40V N-Channel Power MOSFET | STMicroelectronics
部品番号: STL190N4F7AG ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.45 | $145.00 |
| 500 | $1.25 | $625.00 |
| 1,000 | $1.1 | $1,100.00 |
STL190N4F7AG 概要
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in DC-DC converters, motor drives, and battery management systems, where efficient switching and minimal power loss are critical. They are part of the broader family of power semiconductors, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency applications due to their fast switching speeds and low drive power.
Key features of the STL190N4F7AG include a very low on-resistance (RDS(on)) of 2.2 mOhm typical at 10V gate drive, which minimizes conduction losses. The device supports a wide gate drive range from 4.5V to 10V, enabling compatibility with both 5V and 12V logic levels. It also features a high avalanche ruggedness, with an avalanche energy rating of 200 mJ, ensuring reliability in inductive load switching. The PowerFLAT 5x6 package offers a low thermal resistance of 1.2 C/W, allowing efficient heat dissipation in compact designs.
Technically, the STL190N4F7AG is built using ST's advanced PowerMESH technology, which reduces on-resistance and parasitic capacitances, resulting in faster switching and lower switching losses. The device has a total gate charge (Qg) of 60 nC, which reduces the drive requirements and improves efficiency in high-frequency applications. The body diode has a fast reverse recovery time of 30 ns, making it suitable for synchronous rectification in DC-DC converters.
Typical applications include automotive engine control units, DC-DC converters, motor control, and battery protection circuits. In automotive systems, the device's AEC-Q101 qualification ensures reliability under harsh conditions. In industrial power supplies, its low on-resistance and high current capability enable efficient power conversion.
When designing with this device, ensure proper gate drive voltage to fully enhance the channel and minimize on-resistance. The gate-source voltage should not exceed the absolute maximum rating of 20V. Additionally, adequate PCB copper area and thermal vias are required to dissipate heat effectively, especially at high current levels.
ドロップイン代替品: STL190N4F7AG — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
STL190N4F7
✅ ドロップイン📋 参考代替品（カタログ未掲載）
STL190N4F7AG-1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPB190N04S4-02
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
NVMFS5C410N
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
BUK7Y19-40B
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
STL190N4F7AG 最大定格＆電気的特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 190 A |
| On-Resistance (RDS(on)) | 2.2 mOhm @ VGS=10V |
| Gate-Source Voltage (VGS) | ±20 V |
| Total Gate Charge (Qg) | 60 nC |
| Avalanche Energy (EAS) | 200 mJ |
| Body Diode Reverse Recovery Time (trr) | 30 ns |
| Thermal Resistance (RthJA) | 1.2 C/W |
| 動作温度範囲 | -55C to +175C |
| パッケージ | PowerFLAT 5x6 |
| 実装タイプ | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| RoHS ステータス | Compliant |
| Technology | PowerMESH |
STL190N4F7AG ピン構成
| ピン 1 | G — Gate |
| ピン 2 | S — Source |
| ピン 3 | S — Source |
| ピン 4 | S — Source |
| ピン 5 | D — Drain |
| ピン 6 | D — Drain |
| ピン 7 | D — Drain |
| ピン 8 | D — Drain |
安全動作領域
主な用途
STL190N4F7AG の用途: 6 件s: Automotive Engine Control Unit, DC-DC Converter, Motor Control, Battery Management System, Industrial Power Supply, LED Lighting.
Automotive Engine Control Unit
The STL190N4F7AG is ideal for automotive engine control units (ECUs) due to its AEC-Q101 qualification and high current capability. It is used in power distribution, solenoid drivers, and motor control circuits within the ECU. The low on-resistance (2.2 mOhm) minimizes power loss, while the 40V rating handles load dump transients. The PowerFLAT 5x6 package allows compact PCB designs, and the wide operating temperature range (-55°C to +175°C) ensures reliability under hood. In a typical ECU, the MOSFET switches inductive loads such as fuel injectors and relays, where its avalanche energy rating of 200 mJ protects against voltage spikes.
おすすめ
DC-DC Converter
In DC-DC converters, the STL190N4F7AG serves as a synchronous rectifier or main switch. Its low gate charge (60 nC) enables high-frequency operation, reducing transformer size and improving power density. The low on-resistance minimizes conduction losses, achieving efficiencies above 95% in 12V to 5V conversions. The fast body diode reverse recovery (30 ns) reduces switching losses in synchronous rectification. For a 12V input, 5V output converter at 20A, the MOSFET dissipates only 0.88W at full load, allowing a compact heatsink. The PowerFLAT 5x6 package's low thermal resistance (1.2 C/W) ensures stable operation.
おすすめ
Motor Control
The STL190N4F7AG is used in brushless DC (BLDC) motor drives for automotive and industrial applications. Its high current rating (190A) supports motors up to several kilowatts. The low on-resistance reduces heat generation, while the fast switching speed enables PWM control at frequencies up to 20 kHz. In a three-phase inverter, six MOSFETs are used to drive the motor phases. The avalanche ruggedness ensures reliability during motor stall conditions. The AEC-Q101 qualification makes it suitable for electric power steering and cooling fan motors.
おすすめ
Battery Management System
In battery management systems (BMS), the STL190N4F7AG is used for cell balancing and protection circuits. Its low on-resistance minimizes power loss during balancing, and the 40V rating is suitable for 12V and 24V battery packs. The MOSFET can handle high currents during charge and discharge, and its avalanche rating protects against inductive spikes from wiring. The AEC-Q101 qualification ensures reliability in automotive battery systems. In a typical BMS, the MOSFET is placed in series with the battery to disconnect the load in case of overcurrent or overvoltage.
おすすめ
Industrial Power Supply
The STL190N4F7AG is used in industrial power supplies for high-efficiency AC-DC and DC-DC conversion. Its low on-resistance and fast switching reduce losses, enabling compact designs with high power density. The device can handle high currents, making it suitable for server power supplies and welding equipment. The wide operating temperature range allows operation in harsh industrial environments. In a typical power supply, the MOSFET is used in the primary side switching stage, where its low gate charge reduces drive complexity.
おすすめ
LED Lighting
The STL190N4F7AG is used in LED lighting drivers for automotive and industrial applications. Its high current capability supports high-power LED arrays, and the low on-resistance minimizes power loss, improving overall efficiency. The fast switching speed enables PWM dimming at high frequencies without flicker. The AEC-Q101 qualification makes it suitable for automotive headlamps and daytime running lights. In a typical LED driver, the MOSFET is used as a switch in a buck converter to regulate LED current.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: STL190N4F7AG — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | STL190N4F7 | IPB190N04S4-02 | NVMFS5C410N |
|---|---|---|---|---|
| Package | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 190 A | 190 A | 190 A | 190 A |
| On-Resistance (RDS(on)) | 2.2 mOhm | 2.2 mOhm | 2.3 mOhm | 2.5 mOhm |
| Gate Charge (Qg) | 60 nC | 60 nC | 65 nC | 70 nC |
| Automotive Qualification | AEC-Q101 | No | AEC-Q101 | AEC-Q101 |
| Avalanche Energy (EAS) | 200 mJ | 200 mJ | 180 mJ | 150 mJ |
主な差別化要因
- Automotive-grade AEC-Q101 qualification （vs STL190N4F7)
- Lower on-resistance than cross-brand alternatives （vs NVMFS5C410N)
- Higher avalanche energy rating （vs IPB190N04S4-02)
設計ノート
The PowerFLAT 5x6 package has a thermal resistance of 1.2 C/W (junction-to-ambient). At 190A and 2.2 mOhm, power dissipation is approximately 79W, which would require a heatsink or large copper area. For continuous operation, ensure the junction temperature stays below 175°C. Use thermal vias and a minimum of 1 square inch of copper on the drain pad.
Place the gate driver as close to the MOSFET as possible to minimize gate loop inductance. Use a 10-ohm gate resistor to dampen ringing. The source pins should be connected to a low-impedance ground plane to reduce common-source inductance. For high-current paths, use multiple vias and wide traces to handle the current.
Do not exceed the maximum gate-source voltage of ±20V. Ensure the gate drive voltage is at least 10V to achieve the specified on-resistance. When switching inductive loads, the avalanche energy rating of 200 mJ must not be exceeded; use a snubber or clamp circuit if necessary. Also, be aware of the body diode's reverse recovery time (30 ns) in synchronous rectification applications.
コンプライアンス情報
RoHS compliant per STMicroelectronics product page. AEC-Q101 qualified for automotive. Halogen-free status not specified in available data.