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IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
The Infineon IAUCN04S7N019DATMA1 is a dual N-channel MOSFET array built on Infineon's OptiMOS 7 40V technology platform, housed in a PG-TDSON-8-60 (SuperSO8) surface-mount package rated for 96W power dissipation (Tc). It is specified for 40V drain-source breakdown and continuous drain current up to 160A at junction temperature (Tj), making it suitable for high-current synchronous-rectification and automotive 12V/24V bus switching. A dual MOSFET array is a small outline surface-mount module that integrates two identical N-channel MOSFET dies in a common package, sharing the drain thermal pad but providing independent gate/source control on each device. Arrays sit within the broader discrete power-semiconductor hierarchy (MOSFET -> power MOSFET -> discrete semiconductor) and are commonly used where PCB area is constrained but two switches are needed, such as synchronous buck converters, half-bridges, and OR-ing controllers. Key features of this part include the 40V OptiMOS 7 platform with optimized FOM (RDS(on) x Qg), very low on-resistance per channel, integrated ESD protection on the gate, and a -55C to +175C operating junction temperature range that suits under-hood automotive environments. The 1.465 nF typical input capacitance enables fast switching transitions with minimal driver losses. Architecturally, each die uses a trench-gate vertical DMOS cell structure on the OptiMOS 7 process. This yields a low figure-of-merit and reduced Qrr (reverse-recovery charge), which is critical in hard-switched bridge topologies where body-diode recovery losses dominate. The shared source-down thermal pad provides low thermal resistance to the PCB copper pour. Typical applications include 12V automotive eFuse / load-switch blocks, BLDC motor half-bridges for fans and pumps, synchronous rectification in 12V buck converters for ADAS ECUs, USB-PD source switches, and high-current battery protection in 12V/24V Li-ion systems. The AEC-Q101 automotive qualification on the part number's prefix family supports deployment in road-vehicle electronics. When designing with this device, ensure the gate-driver voltage (VGS) is driven to 10V to achieve the rated low RDS(on) and to avoid partial-enhancement losses. The shared drain pad requires substantial PCB copper area (at least 1 sq inch on each side) to keep junction temperature within safe limits at high continuous current. This page synthesizes distributor pricing, drop-in OptiMOS 7 alternatives with the same PG-TDSON-8-60 footprint, and practical PCB layout guidance not found in the manufacturer datasheet alone.
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
The Infineon IAUCN04S7N019GATMA1 is an N-channel OptiMOS 7 power MOSFET rated at 40 V drain-source voltage, 147 A continuous drain current (Tj), and 1.95 mOhm typical on-resistance, packaged in the SSO4G 5x6 mm surface-mount footprint (PG-THSOG-4-1). It is designed for automotive and industrial high-current switching applications and supports IMS (Insulated Metal Substrate) as well as legacy FR4 PCB substrates, giving designers flexibility across thermal management strategies. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between its drain and source terminals when a sufficient gate-source voltage is applied. OptiMOS is Infineon's trench-gate power MOSFET technology family that achieves low RDS(on) per unit silicon area, low gate charge, and high avalanche ruggedness, sitting within the broader class of power management semiconductors alongside IGBTs and SiC FETs. Key features include a 1.95 mOhm typical RDS(on) at VGS=10 V, 81 W maximum power dissipation (Tc), and an operating junction temperature range suitable for AEC-Q101 automotive qualification. The SSO4G 5x6 mm footprint uses a Kelvin-source-connected leadframe that decouples the gate-drive loop from the high-current power loop, reducing switching losses and improving gate-drive stability. Typical applications include 12 V and 24 V automotive load switches, electric power steering (EPS), brushless DC (BLDC) motor drivers, battery management system (BMS) protection, and DC-DC converter primary-side switches. The 1.95 mOhm RDS(on) minimizes conduction losses at the 30-100 A loads common in mild-hybrid and 48 V systems. When designing with this device, ensure the gate driver can source/sink sufficient transient current for the Qg specification, and verify SOA against the application load profile. Place the driver within 10 mm of the gate pin to minimize parasitic inductance that can cause ringing and false turn-on. This page synthesizes distributor stock, AEC-Q101 automotive qualification status, and pin-compatible SSO4G alternatives - information not consolidated in the manufacturer datasheet alone.
IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΩ | Infineon
The Infineon IAUCN04S7N024HATMA1 is an automotive-grade 40 V dual N-channel MOSFET array built on Infineon's OptiMOS-7 40 V technology, featuring an ultra-low typical on-resistance of 2.46 mΩ per channel and a continuous drain current of 100 A (Tj) in a thermally enhanced PG-TDSON-8-56 (SSO8 HB 5x6) surface-mount package with maximum power dissipation of 75 W at Tc. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the workhorse of modern power electronics - a voltage-controlled switch used to convert, switch, and regulate electrical energy with high efficiency. Within the broader taxonomy, this dual-channel device belongs to the discrete semiconductor family, specifically power MOSFETs designed for high-current switching. The "dual" configuration integrates two independent N-channel MOSFETs in a single package, halving board space compared to two discrete parts while simplifying synchronous-rectifier and half-bridge layouts. Key differentiators include a 40 V drain-source breakdown voltage suitable for 12 V automotive load-dump environments, a low typical R_DS(on) of 2.46 mΩ at V_GS = 10 V that minimizes conduction loss, and AEC-Q101 automotive qualification that supports deployment in engine-control units, body electronics, and 48 V mild-hybrid systems. The OptiMOS-7 platform reduces gate charge (Qg) and figure-of-merit (FOM = R_DS(on) × Qg) versus the prior OptiMOS-5 generation, enabling higher switching frequencies and lower driver losses in switched-mode power supplies. The architecture uses a trench-gate cell design optimized for low FOM, with each die featuring an integrated source-connected sense option. The exposed top-side thermal pad of the PG-TDSON-8-56 package enables direct heat extraction to the PCB copper, supporting the 75 W Tc dissipation rating. The 5x6 mm footprint is industry-standard for Power-SO8 / SSO8 dual MOSFETs, allowing drop-in substitution from competing suppliers. Typical applications include automotive LED lighting drivers, electric power steering (EPS), brake-system electronics, brushless DC (BLDC) motor drivers, and high-current DC-DC converter stages for ADAS domain controllers. The dual configuration also suits synchronous buck and half-bridge topologies where the low-side and high-side switches benefit from matched R_DS(on) and Qg. When designing with this device, attention must be paid to gate-drive voltage (10 V recommended for full enhancement), PCB copper area for thermal management, and avalanche-energy handling for unclamped inductive switching events. Compared with single-MOSFET solutions, the dual package requires careful Kelvin-source layout to prevent common-source inductance from degrading switching performance. This page synthesizes distributor pricing, AEC-Q101 same-family alternatives, and practical design notes not found in the manufacturer datasheet.
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
The Infineon IAUCN04S7N027GATMA1 is an Automotive OptiMOS 7 N-channel power MOSFET rated at 40 V drain-source voltage and 117 A continuous drain current, housed in the surface-mount PG-THSOG-4-1 (SSO4G 5x6) package. It features a maximum on-resistance of 2.67 mOhm and is qualified for automotive applications requiring high efficiency and thermal robustness on insulated metal substrate (IMS) or legacy FR-4 boards. The OptiMOS 7 process technology delivers industry-leading figure of merit (FOM) for switching and conduction losses in 40 V synchronous rectification and motor drive topologies. A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled three-terminal switch that conducts current between drain and source when a sufficient gate-source voltage is applied. N-channel MOSFETs use electrons as the primary charge carriers and are favored for low-side switching, synchronous rectification, and half-bridge configurations because their lower Rds(on) per unit silicon area makes them more efficient than equivalent P-channel parts. The 40 V class targets 12 V automotive subsystems, 24 V industrial buses, USB-PD power paths, and small brushless DC motor drives. Key differentiating specifications include a 2.67 mOhm maximum Rds(on), 117 A continuous drain current, 70 W power dissipation at Tc, and compatibility with both IMS substrates and legacy FR-4 PCB assemblies. The SSO4G 5x6 footprint provides a Kelvin-source connection and a large exposed drain pad that minimizes package resistance and maximizes heat transfer to the PCB copper. The OptiMOS 7 cell architecture uses a refined trench-gate structure with lower gate charge and output capacitance than prior generations, reducing switching losses by up to 30 percent at 25 kHz to 100 kHz PWM frequencies. This makes the IAUCN04S7N027GATMA1 well suited for high-frequency synchronous rectification in isolated DC-DC converters and 48 V mild-hybrid systems stepping down to 12 V rails. Typical applications include 12 V automotive ECU power switching, synchronous rectification in isolated DC-DC converters, USB-PD and battery management system (BMS) protection circuits, and high-current BLDC motor half-bridges. The wide gate-source voltage range (typically +/-20 V abs max) simplifies driver compatibility with standard gate drivers. When designing with this part, ensure the gate driver can source and sink at least 1 A to charge the input capacitance quickly and avoid thermal runaway from switching losses. Use a Kelvin-source connection to isolate the gate loop from the high-current source path for clean gate waveforms in high-di/dt applications. This page synthesizes distributor pricing, drop-in alternatives from the same SSO4G footprint family, and practical PCB layout guidance not found in the standalone manufacturer datasheet.
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
The Infineon IAUCN04S7N037GATMA1 is an automotive-grade OptiMOS 7 N-channel power MOSFET rated at 40 V VDS with 91 A continuous drain current (Tj) and 3.65 mΩ typical on-state resistance, housed in a compact SSO4G 5x6 mm² PG-THSOG-4-1 surface-mount package designed for IMS (Insulated Metal Substrate) substrates and legacy PCB compatibility. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between source and drain terminals. The OptiMOS 7 family belongs to the trench MOSFET technology hierarchy, descending from discrete semiconductors > transistors > MOSFETs > power MOSFETs. Automotive-grade OptiMOS 7 devices target switched-mode power conversion, motor drive, and high-current load switching where low conduction loss, fast switching, and ruggedness are required. Key features of the IAUCN04S7N037GATMA1 include an ultra-low RDS(on) of 3.65 mΩ typical at 10 V VGS, optimized switching figures of merit for high-frequency operation, and a 40 V drain-source voltage rating suitable for 12 V automotive systems. The SSO4G 5x6 mm² package offers an exposed drain pad for direct soldering to IMS substrates, enabling direct attach to metal substrates for superior thermal dissipation in high-current applications. The device is built on Infineon's advanced trench technology, which minimizes cell pitch and reduces parasitic capacitances (Ciss, Coss, Crss) for fast switching transitions. Low gate charge (Qg) and low Qgd reduce driver losses, while the low RDS(on) * Qg figure of merit translates to higher system efficiency in synchronous buck, boost, and half-bridge topologies. AEC-Q101 qualification confirms its suitability for automotive environments. Typical applications include 12 V automotive ECU power distribution, electric power steering (EPS), braking system controllers, DC-DC converters in 48V mild-hybrid systems, battery management system (BMS) protection circuits, and high-current motor drive half-bridges. The compact SSO4G footprint makes it especially attractive for space-constrained automotive ECUs. When designing with this MOSFET, prioritize thermal management via IMS substrate attach, ensure VGS drive voltage reaches at least 10 V for full RDS(on) benefit, and verify SOA against your specific load profile. Use a gate driver with sufficient peak current capability to charge the gate quickly and minimize switching losses. This page synthesizes distributor pricing, parametric comparison, drop-in alternatives, and practical design notes not aggregated in the manufacturer datasheet alone - providing engineering context that complements Infineon's product documentation.
IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon
The Infineon IAUCN04S7N056DATMA1 is an N-channel 40 V OptiMOS power MOSFET in a 5-pin TDSON-8-61 (PG-TDSON-8-61) surface-mount package, qualified to AEC-Q101 for automotive use. It specifies a maximum drain-to-source voltage VDS of 40 V, a continuous drain current of approximately 60 A at the silicon junction (62 A per distributor listings) and a power dissipation of 41 W at TC=25°C, with a typical on-resistance of 5.59 mΩ. The die is built on Infineon's OptiMOS 5 40 V platform, which delivers benchmark figure-of-merit R DS(on)×Q g for high-frequency switching and high-current load applications. A power MOSFET is a voltage-controlled three-terminal (gate, drain, source) semiconductor switch that uses an insulated-gate structure to modulate majority-carrier current flow. It belongs to the discrete-semiconductor hierarchy: MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> power switch. Unlike bipolar transistors, the MOSFET gate draws negligible DC current, making it easy to drive from logic-level signals, microcontroller PWM outputs or dedicated gate drivers, while achieving fast switching edges that minimize transition losses. Key features of the IAUCN04S7N056DATMA1 include a very low R DS(on) of 5.59 mΩ typical, gate charge optimized for high-frequency DC-DC conversion, a 175°C maximum operating junction temperature, and an automotive-grade qualification. The 5x6 mm TDSON-8-61 footprint uses an exposed drain pad that serves as both thermal pad and second source connection, keeping the package outline compact while providing a low thermal resistance path. The OptiMOS 5 process technology uses a trench-gate structure with a refined cell pitch to balance conduction loss against switching loss, making this part well suited to high-current synchronous rectification in 12 V automotive electrical systems and high-side/low-side buck converters. With its 5.6 mΩ typical on-resistance, the device can carry tens of amps continuously while keeping conduction losses to a few watts at typical loads. Typical applications include 12 V automotive load switching, high-current DC-DC synchronous buck converters, brushed and BLDC motor drive half-bridges, e-fuse and power-distribution switches, and high-current OR-ing / battery-disconnect circuits. The AEC-Q101 qualification makes it suitable for under-hood and chassis electronics exposed to wide temperature swings. When designing with this part, ensure the gate drive reaches at least 10 V (VGS(th) is in the 2-3 V range; full enhancement requires more) to achieve the datasheet R DS(on). Keep the gate-drive loop area minimal and place a 1 nF-10 nF gate-to-source resistor close to the IC to suppress ringing and prevent inadvertent turn-on from drain dv/dt coupling through C gd. This page synthesizes distributor pricing, AEC-Q101 qualifications, and practical design notes for the Infineon IAUCN04S7N056DATMA1 N-channel MOSFET that are not collated in a single manufacturer datasheet excerpt.
IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon
The Infineon IAUCN08S7L013ATMA1 is an automotive-grade N-channel power MOSFET built on Infineon's OptiMOS 7 platform, rated at 80 V drain-source breakdown voltage and offering an industry-leading maximum on-resistance of 1.26 mΩ. Housed in a compact PG-TDSON-8-53 (TDSON-8 FL) surface-mount package with an exposed thermal pad, the device is specified for 293 A continuous drain current at the silicon junction and supports up to 219 W of power dissipation (Tcase = 25 °C). The 'ATMA1' suffix designates tape-and-reel packaging for high-volume automated assembly. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching element in modern DC-DC conversion, motor control, and load management circuits. MOSFETs sit within the broader power semiconductor taxonomy (power MOSFET -> discrete semiconductor -> power management), and N-channel enhancement-mode devices like this one are preferred over P-channel equivalents because their lower on-resistance per unit silicon area translates directly into lower conduction loss. The OptiMOS 7 generation from Infineon represents the latest refinement of trench-gate technology, with optimized figure-of-merit (FOM = RDS(on) × Qg) targeting high-frequency switching applications. Key electrical characteristics include a 1.26 mΩ maximum on-resistance at VGS = 10 V, 175 A continuous drain current at 100 °C case, and threshold voltage compatible with 12 V automotive gate-drive architectures. The PG-TDSON-8-53 package's exposed die pad minimizes junction-to-case thermal resistance, enabling sustained high-current operation without external heatsinking in well-designed PCB layouts. The OptiMOS 7 cell structure also reduces body-diode reverse-recovery charge, beneficial for synchronous rectification and bridge topologies. Typical automotive applications include 48 V mild-hybrid (MHEV) systems, electric power steering (EPS), brake-by-wire, DC-DC converters between 12 V and 48 V buses, and high-current solenoid or motor drivers. The combination of ultra-low RDS(on) and compact packaging makes the IAUCN08S7L013ATMA1 particularly well suited to high-current synchronous rectification stages where conduction loss dominates the thermal budget. When designing with this part, observe strict PCB layout practices to minimize parasitic source inductance that can otherwise induce drain-voltage transients exceeding the 80 V rating. Use a gate-drive voltage of 10 V to achieve the specified RDS(on); under-driving at 4.5 V can increase on-resistance by 50 % or more. AEC-Q101 qualification supports deployment under the PPAP framework typical of OEM automotive supply chains.
IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN08S7L018ATMA1 is an 80 V N-channel power MOSFET from the OptiMOS™ 7 automotive family, housed in a PG-TDSON-8-43 (5x6 mm) surface-mount package. It is rated for 210 A continuous drain current at the silicon junction and 169 W of power dissipation with the case held at 25 °C, with a maximum on-state resistance of 1.8 mΩ at 25 °C, making it one of the lowest-RDS(on) parts in its voltage class. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for high-efficiency power conversion. It belongs to the hierarchy: MOSFET -> discrete semiconductor -> power transistor -> semiconductor device. Modern low-voltage trench MOSFETs such as this Infineon OptiMOS 7 part are optimized for switching power supplies, motor drives, and battery protection applications where conduction loss directly determines system efficiency. Key features include 80 V drain-source breakdown voltage, 1.8 mΩ maximum on-state resistance, 210 A continuous drain current (Tj), and a low gate charge Qg that enables fast switching at high frequencies. The OptiMOS 7 process technology uses an advanced split-gate trench structure that reduces both RDS(on) and gate charge simultaneously, a combination historically difficult to achieve. The PG-TDSON-8-43 (5x6 mm) package combines a small PCB footprint with an exposed drain tab that doubles as the thermal pad, giving a junction-to-case thermal resistance suitable for high-current switching. The automotive-grade qualification (per Infineon part description, "Automotive OptiMOS 7") supports deployment in 12 V/24 V automotive systems where reliability under thermal and vibration stress is mandatory. Typical applications include 48 V mild-hybrid e-mobility, automotive 12 V/24 V battery protection (battery management systems / BMS), high-current DC-DC converters, motor drives for electric power steering and water/oil pumps, and OR-ing switches. The part also fits industrial high-current switching and telecom 48 V hot-swap controllers. Design tip: because PG-TDSON-8-43 has the drain tab on the bottom, the PCB land pattern must use thermal vias directly under the exposed pad to move heat into the inner copper layers. Keep the high-current loop between drain and source as short as possible to limit parasitic inductance. This page synthesizes distributor pricing, same-family and cross-brand drop-in alternatives, automotive qualification context, and practical layout guidance that is not consolidated on a single manufacturer or distributor page.
IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN08S7L024ATMA1 is an automotive-grade OptiMOS™ 7 N-channel power MOSFET rated at 80 V drain-source voltage with a maximum on-resistance of 2.4 mΩ and continuous drain current up to 177 A (Tj) / 150 A, packaged in the compact PG-TDSON-8-34 (SSO8 5x6 mm²) surface-mount footprint with a maximum power dissipation of 148 W at Tc. It targets high-current, low-loss switching in 12 V and 24 V automotive systems where conduction and switching losses directly affect fuel economy, thermal budget and EMI compliance. A power MOSFET is a voltage-controlled majority-carrier switch that uses an isolated gate to modulate conduction between source and drain terminals. Within the broader taxonomy, this device is an N-channel enhancement-mode MOSFET, itself a sub-family of discrete power transistors sitting under power semiconductors → MOSFETs → low-voltage MOSFETs. OptiMOS™ 7 represents Infineon's seventh-generation trench MOSFET platform, optimised for figure-of-merit (FOM = RDS(on) × Qg) reductions of typically 30-40% versus the previous generation, which translates directly into lower conduction loss, smaller gate-drive losses and reduced dead-time body-diode conduction in synchronous-rectifier stages. Key differentiating specifications include a maximum RDS(on) of 2.4 mΩ at VGS=10 V, an ultra-low gate charge (Qg) characteristic of the OptiMOS 7 family, and an avalanche-rated single-pulse body diode suitable for inductive load switching. The PG-TDSON-8-34 footprint provides a top-side exposed pad for low thermal resistance (θJA typically in the 35-40 C/W range on a 1 oz 4-layer PCB) and a gull-wing lead profile compatible with standard JEDEC reflow profiles. Architecturally, the device uses Infineon's advanced trench cell design with a very small pitch, which delivers low specific on-resistance while maintaining strong avalanche ruggedness and an intrinsic body diode with low Qrr for synchronous-rectifier dead-time management. The process is qualified to AEC-Q101 for automotive use, ensuring PPAP and long-term reliability across automotive temperature grades. Typical applications include automotive 12 V and 24 V high-current synchronous rectification, electric power steering (EPS) motor drive stages, brushless DC (BLDC) motor control in water/oil pumps and fans, battery management system (BMS) protection FETs and DC-DC converter primary-side switches. When designing with this part, prioritise gate-drive robustness — a 10 V gate drive is required to reach the rated 2.4 mΩ RDS(on), and a gate-source resistor of 10-100 Ω is recommended to dampen ringing and limit peak dV/dt-induced turn-on. Ensure the PCB layout provides a continuous copper pour under the exposed pad to achieve the lowest possible junction-to-ambient thermal resistance. This page synthesises verified distributor pricing, qualified drop-in alternatives and practical design notes not consolidated in the manufacturer datasheet — use it alongside the Infineon datasheet for a complete engineering picture.
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN08S7L033ATMA1 is an Automotive OptiMOS™ 7 N-channel power MOSFET rated at 80 V drain-source breakdown voltage with a maximum on-resistance of 3.3 mΩ at 10 V VGS, supporting continuous drain current of 130 A at junction temperature (Tj) and 118 W power dissipation at case temperature (Tc). It is housed in a compact PG-TDSON-8-34 (also marketed as SSO8, 5x6 mm²) surface-mount package, making it one of the lowest-RDS(on) parts in its voltage class for automotive and industrial power-conversion designs. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source terminals. Within the power semiconductor taxonomy, the IAUCN08S7L033ATMA1 sits in the N-channel enhancement-mode MOSFET family, which itself belongs to the broader discrete power transistor category used for switching and amplification in power electronics. Its primary system role is synchronous rectification, DC-DC conversion, and high-current load switching in switched-mode power supplies (SMPS), motor drives, and battery management systems. Key features of this OptiMOS 7 generation device include ultra-low RDS(on) of 3.3 mΩ maximum at VGS = 10 V, a logic-level compatible gate threshold that simplifies driver design, and an automotive-grade qualification per Infineon's AEC-Q100-compatible process flow. The 80 V rating provides ample headroom for 12 V and 24 V automotive bus systems including load-dump transients. The PG-TDSON-8-34 package exposes the drain through a large thermal pad, enabling direct PCB heat spreading and supporting the 118 W (Tc) power dissipation figure. Technically, the OptiMOS 7 platform uses Infineon's latest trench-cell geometry to minimize both conduction losses (low RDS(on)) and switching losses (low Qg, Qgd). Compared to OptiMOS 5, this generation typically delivers 30-40% lower RDS(on) per die area and improved Figure-of-Merit (FOM = RDS(on) × Qg), which directly translates into cooler operation, higher power density, and better efficiency in high-frequency converters. The low gate charge also enables faster switching transitions when paired with a suitably rated gate driver. Typical applications for the IAUCN08S7L033ATMA1 include high-current synchronous rectification in 48 V mild-hybrid DC-DC converters, battery protection and hot-swap controllers in 12 V/24 V automotive systems, motor-drive half-bridges for electric power steering (EPS) and water/oil pumps, and high-current USB-PD power delivery sinks. The 80 V rating also makes it suitable for industrial 24 V bus converters and telecom hold-up power stages. When designing with this MOSFET, pay close attention to gate-drive voltage (10 V recommended for full RDS(on)), PCB layout for the thermal pad (direct soldering to a copper pour of at least 1 sq inch is required at >50 W dissipation), and avalanche energy in unclamped inductive switching. Use a 10 kΩ gate-source pull-down to prevent unwanted turn-on during transients. This page synthesizes Infineon OptiMOS 7 datasheet specifications, distributor pricing, and pin-compatible drop-in alternatives curated from the XAIPART component database, providing engineering context that goes beyond the manufacturer datasheet.
IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon
The Infineon IAUCN08S7L110ATMA1 is an N-channel power MOSFET rated at 80 V drain-source breakdown voltage, with a typical on-state resistance of 11 mΩ at 10 V gate drive, supporting continuous drain current up to 50 A at 25 °C case and 58 W maximum power dissipation in the compact surface-mount PG-TDSON-8-34 (TDSON-8) package. It is engineered using Infineon's OptiMOS™ technology platform, optimized for high-efficiency switching in space-constrained automotive and industrial power stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching transistor used as the primary power-conversion element in synchronous buck converters, half-bridges, full-bridges, and motor-drive half-stages. Within the broader taxonomy, MOSFETs belong to discrete semiconductors, then power transistors, then FETs; they are the workhorse of switch-mode power supplies (SMPS) because of their fast switching, low conduction loss, and ease of paralleling. The IAUCN08S7L110 belongs to Infineon's 75 V–120 V automotive-grade MOSFET portfolio targeting 48 V mild-hybrid and high-current automotive LED/load-switch subsystems. Key features include an 11 mΩ typical R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, a continuous drain-current rating of 50 A (T<sub>j</sub>) and pulsed capability suitable for repetitive inrush events, an avalanche-rated single-pulse body diode, and an operating junction temperature range of -55 °C to +175 °C qualified to automotive reliability expectations. The PG-TDSON-8-34 package features an exposed drain tab that doubles as the electrical drain connection and a low-thermal-resistance path to the PCB copper pad, allowing direct top-side cooling on the PCB. The IAUCN08S7L110ATMA1 uses Infineon's advanced trench-cell architecture, balancing low R<sub>DS(on)</sub> × area figure of merit with low gate charge (Q<sub>G</sub>) and low output charge (Q<sub>OSS</sub>) for high-frequency switching. The result is reduced switching loss in hard-switched topologies and improved light-load efficiency in synchronous-rectifier positions. The trench process is qualified per automotive-grade reliability flows. Typical applications include 48 V automotive systems (mild-hybrid auxiliary loads, e-motor drives), automotive LED lighting drivers, high-side load switches, synchronous rectification in isolated and non-isolated DC-DC converters, and industrial hot-swap / e-fuse circuits. The 80 V rating gives sufficient margin for 48 V bus transients and inductive kick events. When designing with this part, pay attention to gate-drive voltage: full enhancement (and lowest R<sub>DS(on)</sub>) requires V<sub>GS</sub>=10 V, and operation below ~6 V should be avoided. For high-current (>30 A continuous) designs, the PCB drain pad must be a multi-via array directly under the exposed tab; otherwise the silicon will thermally limit long before its rated current is reached. This page synthesizes distributor pricing, automotive-grade application context, and PCB-layout thermal guidance drawn from manufacturer documentation that is typically scattered across datasheets and application notes.
IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon
The Infineon IAUCN08S7N024ATMA1 is an 80 V N-channel automotive OptiMOS 7 power MOSFET rated at 165 A continuous drain current with an ultra-low 2.4 mΩ maximum on-resistance, housed in a surface-mount PG-TDSON-8-34 package. It is engineered for 48 V automotive systems, high-current DC-DC converters, and motor control where conduction losses dominate the thermal budget. What is an automotive-grade OptiMOS 7 power MOSFET? It is a N-channel enhancement-mode power transistor built on Infineon's latest 80 V OptiMOS 7 trench process, qualified to AEC-Q101 for automotive use. In the broader taxonomy it is a power MOSFET -> discrete semiconductor -> active component. The OptiMOS 7 family improves figure of merit (FOM = RDS(on) × Qg) versus prior OptiMOS generations, enabling lower switching and conduction losses in high-frequency power conversion. Key features include a maximum drain-source voltage VDS of 80 V, continuous drain current ID of 165 A at 25 °C case temperature, pulsed current handling suitable for inrush and short-circuit conditions, and a logic-level compatible gate drive. The PG-TDSON-8-34 package provides an exposed thermal pad (EP) for direct PCB heatsinking, minimizing thermal resistance from junction to board. The die uses Infineon's advanced trench MOSFET technology with low gate charge and low output capacitance, optimizing switching performance in high-frequency buck/boost topologies. The 2.4 mΩ RDS(on) specification is measured at VGS = 10 V, and the device maintains low RDS(on) across the automotive temperature range, ensuring predictable conduction loss in safety-critical applications. Typical applications include 48 V mild-hybrid electric vehicle (MHEV) DC-DC converters, electric power steering (EPS), braking systems, high-current BLDC motor drives, and automotive load switches. The 165 A rating supports high-power 48 V bus architectures used in modern zonal E/E platforms. When designing with this MOSFET, ensure the PCB layout provides sufficient copper pour area on the exposed pad for thermal dissipation. The gate drive should use a dedicated gate driver IC with sufficient source/sink current for fast switching transitions and minimized dead-time in bridge configurations. This page synthesizes distributor pricing, drop-in same-brand alternatives, and practical thermal guidance not consolidated on a single distributor product page.
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
The Infineon IAUCN08S7N024TATMA1 is an 80 V N-channel automotive power MOSFET from the OptiMOS™ 7 family, rated at 2.44 mΩ maximum on-resistance, 165 A continuous drain current (Tj) and 157 W power dissipation (Tc). It is housed in a top-side cooled SSO10T 5x7 mm² surface-mount package (PG-LHDSO-10-1) and is qualified to AEC-Q101 for automotive applications. An N-channel power MOSFET is a voltage-controlled three-terminal semiconductor switch that uses an insulated gate to modulate conduction between source and drain. Within the broader taxonomy, the IAUCN08S7N024TATMA1 belongs to the discrete semiconductors category, more specifically MOSFETs, then enhancement-mode N-channel MOSFETs, then the automotive-grade sub-family, and finally Infineon's OptiMOS™ 7 generation optimized for low Rds(on) and high current handling. It is intended for high-current 12 V and 24 V automotive power trains such as electric power steering, brake systems, and DC-DC converters. The IAUCN08S7N024TATMA1's headline specifications include 80 V drain-source breakdown voltage, 2.44 mΩ maximum Rds(on) at VGS=10 V, 165 A continuous drain current at junction temperature, and 157 W maximum power dissipation. The top-side cooled SSO10T package is engineered for direct PCB heat extraction to a heatsink or cold plate, dramatically reducing thermal resistance compared with bottom-cooled alternatives. The device is fully AEC-Q101 qualified and PPAP-capable for automotive OEM programs. Built on Infineon's advanced OptiMOS™ 7 trench technology, the device achieves industry-leading figure-of-merit (FOM = Rds(on) × Qg) for 80 V MOSFETs, reducing both conduction and switching losses. The top-side cooling SSO10T package removes heat directly through the source tab to an attached heatsink, freeing PCB bottom-side copper for high-current routing and enabling more compact inverter designs. Typical applications include automotive 12 V and 48 V high-current load switching, electric power steering (EPS) inverters, brake-by-wire motor drives, electric water/oil pumps, and high-power DC-DC converters in mild hybrid vehicles. The 80 V rating also provides comfortable transient margin on 12 V and 24 V automotive buses. When designing with this part, ensure the gate driver can source/sink at least 1 nC of Qg into the gate within the desired switching time. Use Kelvin-source connection if available to minimize gate-drive parasitic inductance, and follow Infineon's SSO10T layout guidelines for thermal via patterns and source-tab soldering. This page synthesizes Infineon datasheet specifications, AEC-Q101 automotive qualification status, SSO10T package thermal data, and cross-vendor drop-in equivalents not collected on a single manufacturer datasheet page.
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
The Infineon IAUCN08S7N034ATMA1 is an N-channel 80 V OptiMOS™ 7 automotive power MOSFET rated for 120 A continuous drain current and 3.4 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, housed in a surface-mount PG-TDSON-8-34 (TDSON EP) package with exposed pad. It is AEC-Q101 qualified and targets 12 V / 24 V automotive DC-DC converter, motor drive, and high-current load-switch applications where low conduction loss and small footprint are critical. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which majority-carrier electron conduction (rather than minority-carrier transport) enables very fast switching and very low on-state resistance. MOSFETs belong to the discrete semiconductor family, sit within the broader power management hierarchy, and are the workhorse of switched-mode power supplies, synchronous rectifiers, and hot-swap circuits. The OptiMOS™ 7 process is Infineon's seventh-generation trench technology, which shrinks cell pitch to lower R<sub>DS(on)</sub> per unit area while reducing gate charge and improving switching loss. Key electrical characteristics include a drain-source breakdown voltage V<sub>(BR)DSS</sub> of 80 V, a continuous I<sub>D</sub> rating of 120 A at 25 °C case (much lower at 175 °C T<sub>J</sub>), a pulsed avalanche current rating, and typical gate charge Q<sub>G</sub> of 45.8 nC at V<sub>GS</sub>=10 V. The 3.4 mΩ R<sub>DS(on)</sub> produces 0.41 W conduction loss per ampere of drain current, while the 23 pF C<sub>iss</sub> and 3.115 nF C<sub>oss</sub> keep switching energy moderate for a 100 V class device. The PG-TDSON-8-34 (5 mm × 6 mm) package uses an exposed metal drain tab that doubles as the thermal pad, giving an R<sub>thJA</sub> suitable for 118 W power dissipation on a properly designed 1 oz copper FR-4 PCB. The package is lead-free, RoHS compliant, and rated MSL 1, simplifying automotive board assembly. Typical applications include 48 V mild-hybrid DC-DC converters, 12 V automotive buck/boost converters, electric power steering (EPS) half-bridges, HVAC blower and pump drivers, and battery disconnect switches in e-mobility. The AEC-Q101 grade-1 (-55 °C to +175 °C T<sub>J</sub>) qualification also makes it suitable for industrial high-current switching and telecom hot-swap controllers. When designing with this device, place the gate-drive loop as compact as possible (gate resistor, gate-source pull-down, and IC within 5 mm of the gate pad) to suppress ringing on the 80 V-rated gate oxide. Verify that V<sub>GS(th)</sub> stays above 3.2 V minimum across temperature to prevent parasitic turn-on in half-bridge configurations, and size the PCB copper flood under the exposed pad to keep junction temperature below 150 °C at worst-case steady-state load. This page synthesizes distributor pricing, verified automotive-grade drop-in alternatives, and PCB-level design notes not found in the manufacturer datasheet - useful for automotive power engineers evaluating 80 V MOSFET platforms.
IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon
The Infineon IAUCN08S7N036TATMA1 is an N-channel 80 V automotive-grade OptiMOS 7 power MOSFET with a maximum drain-source on-resistance of 3.60 mΩ and a continuous drain current of 129 A, housed in a top-side cooled PG-LHDSO-10-1 (SSO10T, 5x7 mm) surface-mount package. The suffix "ATMA1" indicates tape-and-reel packaging qualified to automotive standards. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source terminals when a positive gate-source voltage is applied. The OptiMOS 7 family represents Infineon's latest-generation automotive power MOSFET platform, optimized for switching power conversion, motor drive, and battery management in 48 V and 12 V vehicle electrical systems. As a member of the discrete semiconductor hierarchy, this MOSFET fits within the broader category of power transistors used in automotive electronic control units. Key specifications include 80 V drain-source breakdown voltage, 3.60 mΩ maximum R_DS(on) at V_GS = 10 V, 129 A continuous drain current, and 118 W power dissipation at T_C = 25 °C. The OptiMOS 7 technology reduces gate charge and output capacitance versus prior generations, lowering switching losses and enabling higher-frequency operation. The top-side cooled SSO10T package provides an exposed die top surface for direct attachment to a heatsink or cold plate, dramatically reducing thermal resistance compared to bottom-cooled packages. Typical applications include 48 V mild-hybrid electric vehicle (MHEV) systems, electric power steering (EPS), brake-by-wire actuators, DC-DC converters, and battery management systems (BMS). The automotive-grade qualification (AEC-Q101) makes it suitable for under-hood environments where temperature, vibration, and humidity stress exceed commercial-grade requirements. When designing with this MOSFET, ensure the gate driver can supply sufficient peak current (typically >1 A) to charge the input capacitance quickly, and select a gate resistor to balance switching speed and ringing. The top-side cooling surface should be thermally bonded to the heatsink with thermal interface material (TIM) to achieve the rated thermal performance.
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
The Infineon IAUCN10S5L110TATMA1 is an automotive-grade OptiMOS 5 N-channel power MOSFET rated at 100 V VDS with 11.3 mΩ maximum RDS(on) and 61 A continuous drain current (Tj), housed in a top-side cooled SSO10T (5x7) surface-mount package (PG-LHDSO-10-1). The suffix "L110" denotes the 11.3 mΩ on-resistance variant, while "ATMA1" indicates the automotive-qualified tape-and-reel ordering code. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which applying a positive gate-source voltage creates an inversion layer that conducts current between drain and source. MOSFETs belong to the field-effect transistor (FET) family, which sits within the broader power discrete semiconductor hierarchy: MOSFET -> FET -> discrete semiconductor -> semiconductor. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform optimized for low conduction and switching losses in automotive and industrial power conversion. Key differentiating features include 11.3 mΩ maximum RDS(on) at VGS=10 V, logic-level gate drive (10 V VGS fully enhanced, 4.5 V guaranteed enhancement), 175°C maximum operating junction temperature, MSL1 rating up to 260°C peak reflow, and 100% avalanche-tested ruggedness. The PG-LHDSO-10-1 (SSO10T 5x7) package features a top-side thermal pad that enables direct cooling via the package lid rather than the PCB copper, dramatically lowering thermal resistance in z-axis constrained designs. The OptiMOS 5 trench cell architecture delivers an industry-leading FOM (figure of merit = RDS(on) × Qg), reducing both conduction and switching losses. The top-side cooled SSO10T package achieves thermal resistance (RthJC) on the order of 0.9°C/W, an order of magnitude better than conventional SO-8 footprint parts, which is critical for high-current automotive applications such as 48 V mild-hybrid systems, electric power steering, and DC-DC converters. Typical applications include automotive 48 V DC-DC converters, electric power steering (EPS) systems, battery management systems (BMS) for xEVs, motor drives for pumps and fans, and telecom/datacenter 48 V intermediate bus converters. The automotive-grade qualification and extended reliability testing make it suitable for safety-critical systems requiring AEC-Q101 compliance. When designing with this part, prioritize gate-driver impedance to control switching losses, and account for the top-side cooled package's unique PCB layout: the drain tab sits on top of the package, and source connections are routed through the side leads. A 1 Ω gate resistor is typically sufficient to manage dv/dt ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IAUCN10S5L280DATMA1 is a dual N-channel MOSFET array in a 100V class, rated at 23A continuous drain current (Tj) and 38W power dissipation (Tc), housed in a surface-mount PG-TDSON-8-61 (SSO8) package. It belongs to Infineon's OptiMOS 5 100V family and is qualified for automotive applications, making it suitable for harsh-environment designs including 48V automotive systems, LED lighting drivers, and motor control. A dual MOSFET (or MOSFET array) is a single package containing two independent MOSFET dies with shared source connections or fully isolated, used to halve board space, simplify gate-drive routing, and improve thermal coupling in half-bridge, full-bridge, and synchronous-rectifier topologies. MOSFET arrays sit within the broader category of power MOSFETs, which in turn are a key sub-family of discrete semiconductors, and ultimately fall under power management devices. Dual N-channel parts are particularly common in low-side and synchronous-rectifier positions where both switches can be driven with the same polarity. Key features of the IAUCN10S5L280DATMA1 include a 100V drain-source breakdown voltage (Vds), an ultra-low on-state resistance for the 100V OptiMOS 5 generation, and a logic-level compatible gate drive. The SSO8 (PG-TDSON-8-61) package offers an exposed drain pad that dramatically reduces thermal resistance, allowing the dual die to share a single cooling surface. The 38W Tc power rating reflects the package's ability to dissipate substantial heat when mounted on a sufficient copper area. Architecturally, the OptiMOS 5 platform uses Infineon's latest trench MOSFET technology, which optimizes the figure-of-merit (FOM = Rds(on) × Qg) for switching loss reduction. The low Rds(on) per die minimizes conduction loss, while the optimized gate charge enables higher switching frequencies without excessive driver loss. The result is a part that performs well in both hard-switched and soft-switched power topologies, from 48V DC-DC converters in mild-hybrid vehicles to high-frequency synchronous buck stages in industrial automation. Typical applications include automotive 48V motor drives, LED lighting ballasts, isolated DC-DC converter primary-side switches, and OR-ing / hot-swap controllers. The dual-die configuration is particularly useful in half-bridge and synchronous-rectifier layouts where PCB routing symmetry is critical. The automotive grade qualification (per the IAU prefix) means the part is suitable for AEC-Q101 environments including engine-control units, battery management, and electric power steering. When designing with this part, ensure the gate drive voltage matches the OptiMOS 5 Vgs(th) and that the SSO8 exposed pad is soldered to a copper pour of at least 1 square inch for thermal performance. Pay attention to dv/dt-induced turn-on in half-bridge configurations; adding a small gate-source resistor (10-100kΩ) on the lower FET prevents spurious turn-on from the high-side dV/dt. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet alone.
IAUCN10S7L180ATMA1 - 100V 39A 18mΩ Automotive MOSFET | Infineon
The Infineon IAUCN10S7L180ATMA1 is a 100 V N-channel OptiMOS™ 7 automotive power MOSFET delivering 39 A continuous drain current (Tj) and 58 W power dissipation (Tc) in a surface-mount PG-TDSON-8-34 package. The device features a maximum drain-source on-resistance of 18 mΩ, a gate threshold of 1.6 V, and a total gate charge of 11 nC, with input capacitance of 272 pF and output capacitance of 668 pF. According to the Infineon datasheet, it is qualified for automotive applications and supports a ±20 V maximum gate-source voltage. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion, motor control, and load switching. N-channel MOSFETs such as the IAUCN10S7L180ATMA1 conduct current between drain and source when a positive gate-source voltage is applied. They belong to the broader class of power transistors within discrete semiconductors, alongside IGBTs and P-channel MOSFETs. The OptiMOS™ 7 family from Infineon represents a seventh-generation trench MOSFET platform optimized for low R DS(on), low switching losses, and high reliability in harsh automotive environments. Key features include an extremely low R DS(on) of 18 mΩ at 10 V VGS, reducing conduction losses in high-current paths; a low gate charge of 11 nC, enabling fast switching and reduced driver losses; and a wide operating junction temperature range of -55 °C to +175 °C, suitable for under-hood automotive applications. The PG-TDSON-8-34 package provides an exposed drain pad for efficient thermal dissipation. The device uses Infineon's advanced trench technology to achieve a Figure of Merit (FOM = R DS(on) × Q g) that is among the lowest in its voltage class. This results in lower total power loss during both conduction and switching, enabling higher system efficiency and smaller heatsink requirements in DC-DC converters and motor drive stages. Typical applications include automotive LED headlight drivers, electric water pumps, engine cooling fans, electronic power steering (EPS), and 12 V/48 V DC-DC converters. The part is also suited for body electronics modules and battery management systems in mild-hybrid vehicles. When designing with this MOSFET, ensure the gate driver can supply sufficient peak current to charge the input capacitance quickly. The exposed pad must be soldered to a sufficiently large copper area (typically ≥ 100 mm²) to maintain junction temperature within safe limits under continuous load. This page synthesizes Infineon manufacturer data, distributor pricing, drop-in alternative analysis, and practical PCB thermal design notes not found in a single manufacturer datasheet, providing a one-stop engineering reference for selecting and sourcing the IAUCN10S7L180ATMA1.
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
The Infineon IAUCN10S7L290TATMA1 is an automotive-grade N-channel power MOSFET from the OptiMOS™ 7 family, rated at 100 V VDS(max) with 27 A continuous drain current and a maximum on-resistance of 28.6 mΩ, packaged in a top-side cooled PG-LHDSO-10-1 (SSO10T 5x7) surface-mount housing. It is designed for high-efficiency switching in 12 V and 24 V automotive systems where low conduction loss, low gate charge, and superior thermal performance are critical. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used as a fast switch or amplifier in power-conversion circuits. In the broader taxonomy, a MOSFET sits below discrete transistors, below discrete semiconductors, and ultimately below power management semiconductors. N-channel enhancement-mode MOSFETs such as the IAUCN10S7L290TATMA1 are the dominant choice for low-side and high-side switches in synchronous buck converters, half-bridges, and motor drivers because they offer lower RDS(on) per unit silicon area than equivalent P-channel parts. Key differentiating parameters include a maximum RDS(on) of 28.6 mΩ at VGS = 10 V, a maximum continuous drain current of 27 A at TC = 25 °C, a maximum power dissipation of 45 W at TC, and a top-side cooled source-down package that enables direct PCB heatsink attachment for superior thermal extraction. The OptiMOS™ 7 cell technology reduces gate charge (Qg) and output capacitance (Coss) versus the previous OptiMOS™ 5 generation, directly lowering switching losses in high-frequency DC-DC converters. Architecturally, the device uses Infineon's latest trench MOSFET cell platform optimized for 100 V breakdown, with an integrated ESD-protected gate and an avalanche-rated body diode. The 100 V rating provides ample derating margin for 24 V automotive load-dump transients up to 35 V, while the low Qg supports fast switching at 100 kHz to 1 MHz in point-of-load converters. The PG-LHDSO-10-1 (also marketed as SSO10T 5x7) leadless package exposes the die on the top side for direct cooling. Typical applications include 48 V mild-hybrid DC-DC converters, automotive HVAC blower and pump drivers, electronic power steering (EPS) controllers, battery management system (BMS) protection FETs, and on-board charger (OBC) auxiliary circuits. The combination of low RDS(on), automotive qualification, and top-side cooling makes it especially well-suited to space-constrained under-hood ECUs. When designing with this part, calculate worst-case conduction loss as I²RDS(on) and switching loss as 0.5 × VDS × ID × (tr + tf) × fSW. At 20 A continuous in a sealed enclosure, a thermal review is mandatory because the SOA shrinks rapidly above 100 °C junction. The top-side cooled package allows a thermal interface material (TIM) plus heatsink for >2× the dissipation of comparable bottom-cooled parts. This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. Engineers can quickly evaluate whether the IAUCN10S7L290TATMA1 fits their AEC-Q100-qualified 100 V switching application, and where to source it with full traceability.
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
The Infineon IAUCN10S7N021ATMA1 is a 100 V automotive-grade N-channel MOSFET built on OptiMOS™ 7 technology, delivering a maximum drain-source on-resistance of 2.1 mΩ at VGS=10 V and continuous drain current of 175 A (Tj) in a compact PG-TDSON-8-53 (SSO8, 5x6 mm) surface-mount package with exposed pad. An automotive power MOSFET is a specialized N-channel enhancement-mode transistor designed and qualified for the harsh electrical and thermal environments of vehicle electrical systems. The IAUCN10S7N021ATMA1 belongs to the discrete semiconductor family (MOSFET > power MOSFET > automotive MOSFET > OptiMOS 7), and serves as the synchronous-rectification or high-side/low-side switch in 48 V and 12 V powertrain, body-electronics, and DC-DC converter applications where low conduction loss, high switching speed, and AEC-Q101 reliability are required. Key features include an ultra-low typical R<sub>DS(on)</sub> of 2.1 mΩ at 10 V VGS, a maximum drain current of 175 A at case temperature, 217 W power dissipation at Tc, gate threshold VGS(th) of 3.2 V typical, total gate charge of 105 nC at 10 V, and an operating junction temperature range of -55 °C to +175 °C. The OptiMOS 7 process reduces figure-of-merit R<sub>DS(on)</sub>×Q<sub>g</sub> by a significant margin versus prior OptiMOS generations, improving switching efficiency at high frequencies. The device uses Infineon's latest advanced trench cell architecture and is qualified to AEC-Q101, making it suitable for safety-critical automotive loads. Its low Q<sub>g</sub> (105 nC) and 2.98 nF C<sub>iss</sub> make it well-suited to high-frequency SMPS designs where driver losses and switching-node ringing must be minimized. Typical applications include 48 V DC-DC converters, 12 V/48 V belt-starter-generator systems, automotive EPS (electric power steering), electric vehicle traction inverters, and high-current USB-PD/EPR charging ports. The part is also widely used as a synchronous rectifier in telecom and server bus converters operating above 60 V input. When designing with this MOSFET, place the gate-drive resistor and bootstrap diode within 5 mm of the gate pad to minimize parasitic loop inductance, and ensure the exposed pad is soldered to at least 100 mm² of copper for the 217 W power rating. The 2.1 mΩ R<sub>DS(on)</sub> translates to roughly 65 W of conduction loss at 175 A continuous — heat-sinking must be designed for this. This page synthesizes distributor pricing, drop-in alternatives, parametric proximity, and practical PCB-layout notes not found in the manufacturer datasheet alone, with cross-brand equivalents sourced from cross-reference web data.
IAUCN10S7N074ATMA1 - 100V 7.4mΩ N-Channel OptiMOS 7 MOSFET | Infineon
The Infineon IAUCN10S7N074ATMA1 is a 100 V automotive-grade N-channel power MOSFET built on Infineon's OptiMOS™ 7 technology, delivering 78 A continuous drain current (Tj) and a typical R<sub>DS(on)</sub> of 7.4 mΩ in a compact PG-TDSON-8-34 (TDSON EP) surface-mount package. The part is qualified to AEC-Q101, targeting 48 V automotive electrical systems, mild-hybrid eMotors, and high-current DC-DC converters. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route and regulate current in power conversion. The N-channel variant requires a positive gate drive relative to source to turn on. Within the broader taxonomy, MOSFETs belong to discrete semiconductors > transistors > FETs > power MOSFETs. OptiMOS™ 7 is Infineon's latest-generation 100 V platform that combines a shielded-gate trench (SGT) cell structure with an optimized epitaxial layer to simultaneously reduce R<sub>DS(on)</sub>, gate charge (Qg), and output capacitance (Coss), enabling higher switching frequency and lower conduction losses. Key features of the IAUCN10S7N074ATMA1 include a maximum drain-source voltage V<sub>DS</sub> of 100 V, continuous drain current I<sub>D</sub> of 78 A at T<sub>C</sub>, pulsed drain current support up to [DATA_NEEDED: pulsed Id], gate-source voltage V<sub>GS</sub> rating of ±20 V, and typical R<sub>DS(on)</sub> of 7.4 mΩ at V<sub>GS</sub>=10 V. The SGT cell technology yields a figure-of-merit (FOM = R<sub>DS(on)</sub> × Qg) that is materially better than the previous OptiMOS™ 5 generation, supporting higher switching frequencies and reduced driver losses in 48 V automotive applications. The PG-TDSON-8-34 package provides an exposed thermal pad that ties directly to the drain tab, giving low thermal resistance θ<sub>JA</sub> and supporting a maximum power dissipation P<sub>D</sub> of 96 W at T<sub>C</sub>=25 °C. The package is lead-free, RoHS compliant, and rated for MSL2 (1-year floor life). This combination of low R<sub>DS(on)</sub>, low Qg, and a thermally enhanced package makes the part well suited to automotive DC-DC converters, BLDC motor drives, battery protection, and high-current switching in 48 V systems. Typical applications include 48 V mild-hybrid DC-DC converters, eMotor inverter stages, high-side load switches, battery management system (BMS) disconnect switches, and Class-D audio amplifier outputs. Designers frequently pair it with Infineon EiceDRIVER™ gate drivers such as 1EDN7116G or 2EDN7534R for fast, controlled turn-on/off in switching power topologies. A critical design consideration is gate-drive voltage. While the part is specified at V<sub>GS</sub>=10 V for the headline R<sub>DS(on)</sub>, it can be driven from a 12 V regulated rail. Designers must observe the ±20 V V<sub>GS</sub> absolute maximum and ensure the gate-source path never exceeds this rating during transient events. PCB layout should use a wide copper pour on the drain pad and minimize source-inductance loop area to control switching losses and ringing. This page synthesizes distributor pricing, parametrically similar drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
The Infineon IAUS260N10S5N019TATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology platform, rated at 100 V drain-to-source voltage with 260 A continuous drain current (Tj) and an ultra-low typical on-state resistance of 1.9 mΩ, housed in a topside-cooled PG-HDSOP-16-2 (TOLT) surface-mount package. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power conversion applications. MOSFETs belong to the discrete semiconductor hierarchy (MOSFET -> transistor -> semiconductor device) and serve as the primary switching element in DC-DC converters, motor drives, and automotive electronic systems. The 100 V class of MOSFETs targets 48 V automotive bus rails, industrial power tools, and high-current synchronous rectification stages. Key features include an industry-leading 1.9 mΩ Rds(on) at 10 V Vgs, 300 W continuous power dissipation at Tc, and a topside-cooled TOLT package that enables direct attachment to a heatsink on the top of the device. The OptiMOS™ 5 generation delivers a figure-of-merit improvement of approximately 30% versus the previous OptiMOS™ 3 platform, with lower gate charge (Qg) and reduced switching losses. The device is qualified for automotive use cases per the IAUS part-number prefix. The IAUS260N10S5N019TATMA1 uses a trench-gate MOSFET structure optimized for low conduction loss at high currents, making it particularly suited to high-power-density automotive 48 V applications. The topside-cooled package dramatically improves thermal resistance (RthJC) by decoupling the drain thermal path from the PCB, allowing the PCB to remain compact while the heatsink is mounted on the package top side. Typical applications include 48 V automotive pumps, electric fans, e-compressors for electric vehicle HVAC systems, and high-current DC-DC converters. The combination of very low Rds(on) and topside cooling makes this part especially valuable where PCB bottom-side heatsinking is impractical or impossible due to chassis or enclosure constraints. When designing with this part, pay close attention to the gate-drive circuit: a peak gate current of several amps is needed to switch the large die area quickly. Use a dedicated gate-driver IC (such as the Infineon 1EDN series) and minimize the gate-loop inductance. The topside thermal pad must be mated to a heatsink with a defined torque and thermal interface material to achieve datasheet RthJC ratings. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing an engineer-ready reference for sourcing and qualifying the IAUS260N10S5N019TATMA1.
IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
The Infineon IAUS300N08S5N011TATMA1 is an N-channel OptiMOS-5 power MOSFET rated at 80 V drain-source voltage, 300 A continuous drain current (Tj), and an ultra-low 1.1 mOhm maximum R_DS(on) at V_GS = 10 V, housed in the PG-HDSOP-16-2 surface-mount package with 375 W power dissipation (Tc). It is an automotive-grade part targeting high-current 48 V systems. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an electric field at the gate to control current flow between drain and source. In the broader semiconductor taxonomy, MOSFETs sit within discrete semiconductors, then power transistors, and finally power management switches. N-channel enhancement-mode MOSFETs like this one are the workhorse of high-efficiency synchronous rectification, motor drive, and DC-DC conversion because their low on-resistance minimizes conduction loss and their fast switching speeds shrink magnetics and capacitors. The OptiMOS-5 family is Infineon's fifth-generation 80-300 V platform optimized for automotive 48 V boardnet, mild-hybrid e-machines, and high-current telecom bricks. Key headline specifications include: 1.1 mOhm maximum R_DS(on) at V_GS = 10 V, 231 nC total gate charge (Q_G) at 10 V, 130 pF typical C_OSS, 3 V maximum gate-threshold voltage, and 16.25 nF typical C_RSS. The PG-HDSOP-16-2 package is a wettable-flank, dual-side-cooling SMD outline designed for high-current automotive PCB assemblies with Kelvin-source connection. The device uses Infineon's advanced OptiMOS-5 trench cell architecture with a 75 V to 120 V optimized voltage class. The 1.1 mOhm R_DS(on) per cell combined with low Q_G reduces both conduction and switching losses, enabling high-frequency operation above 100 kHz in 48 V-to-12 V or 48 V-to-3.3 V point-of-load converters used in mild-hybrid vehicles. Typical applications include 48 V mild-hybrid e-machines, electric power steering (EPS), 48 V DC-DC converters, high-current brushless DC motor drives, and automotive battery disconnect switches. The wide 80 V rating also makes it suitable for industrial 48 V telecom bricks and solar micro-inverters where a low on-resistance is critical to maintain efficiency at high load current. When designing with this MOSFET, ensure the gate driver can source and sink sufficient peak current (typically 1-2 A) to charge the 231 nC Q_G quickly and minimize switching loss. The Kelvin-source pin (pin 4) must be connected directly to the driver ground return to suppress source-inductance-induced gate ringing and prevent shoot-through in half-bridge topologies. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select and source the IAUS300N08S5N011TATMA1 for automotive and industrial 48 V power applications.
IAUS300N08S5N012 - 80V 300A 1.2mΩ OptiMOS 5 Power MOSFET | Infineon
The Infineon IAUS300N08S5N012 is an 80 V N-channel enhancement-mode power MOSFET from the OptiMOS 5 family, delivering 300 A continuous drain current at Tc and an ultra-low R<sub>DS(on)</sub> of 1.2 mΩ typical at VGS=10 V in the PG-HSOG-8-1 surface-mount package. It is AEC-qualified, MSL1 to 260°C peak reflow, and rated for 175°C operating temperature, making it a purpose-built automotive-grade switching device. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route and switch high currents at high frequencies. Power MOSFETs sit inside the hierarchy discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> power management switch. They are differentiated from signal MOSFETs by low on-resistance, high current handling, and avalanche ruggedness, making them the workhorse of switched-mode power supplies (SMPS), motor drives, and load switches. The IAUS300N08S5N012's headline figures include 1.2 mΩ typical R<sub>DS(on)</sub> at 10 V VGS, 300 A continuous Id, 375 W power dissipation, and an avalanche-rated single-pulse drain current. Its threshold voltage VGS(th) of 3.8 V at 275 µA supports standard 12 V automotive gate-drive architectures, while the optimized OptiMOS 5 cell shrinks switching losses and reduces Qg for higher-frequency, higher-efficiency designs. The OptiMOS 5 process technology uses a planar trench structure to minimize R<sub>DS(on)</sub> × area figure-of-merit, which directly translates to lower conduction loss in heavy-load conditions. Combined with 100% avalanche-tested ruggedness and a low thermal resistance package, the IAUS300N08S5N012 is engineered for high-reliability environments where long-term operation at high junction temperature is required. Typical applications include high-current automotive 48 V/12 V load switches, electric power steering (EPS) motor drives, brake-by-wire systems, DC-DC converter primary switches, battery management protection, and high-power industrial SMPS. Designers choose this part when conduction loss dominates the thermal budget and ultra-low R<sub>DS(on)</sub> is mandatory. When designing, derate Id to roughly 50% of the 300 A rating once package thermal resistance and PCB copper are accounted for; a continuous 150 A load on a 1 oz copper 4-layer board typically requires at least 6 cm² of copper under the PG-HSOG-8-1 thermal pad. Always gate-drive with a dedicated driver such as the EiceDRIVER 1EDN series to keep switching loss in check. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.