IR21271SPBF vs IR2127SPBF 비교

다음의 상세 나란히 비교: IR21271SPBF 제조: Infineon 및 IR2127SPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IR21271SPBF IR2127SPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.71 $0.74
Product Type Single-channel high-side gate driver with current sensing —
Technology HVIC and latch-immune CMOS —
Maximum Floating Supply Voltage 600 V —
Output Source Current 0.25 A —
Output Sink Current 0.5 A —
Gate Drive Voltage Range 9 V to 20 V (per related IR2127 datasheet family) —
Configuration High-side, low-side capable (floating channel) —
Input Logic Compatibility 3.3 V CMOS / LSTTL —
Input Type Non-inverting —
Negative Transient Tolerance (dV/dt) Tolerant —
Bootstrap Operation Supported (floating channel) —
Integrated Current Sensing Yes —
패키지 8-SOIC 8-SOIC (SOIC-8)
Lead Finish Lead-free (PbF) —
동작 온도 범위 -40C to +125C (industrial) —
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant (Pb-free suffix PBF)
Number of Channels 1 —
Channel Type — Single-channel, High-Side
Gate Driver Configuration — Non-Inverting Input
출력 수 — 1
Peak Source Current (typ) — 0.25 A
Peak Sink Current (typ) — 0.5 A
Maximum Offset Voltage (High-Side) — +600 V
Negative Transient Tolerance — dV/dt immune, negative transient tolerant
Supply Voltage (VCC) — 10 V to 20 V
Logic Input Compatibility — CMOS / LSTTL, 3.3 V to VCC
Propagation Delay (typ) — 150 ns
Rise Time (typ, 1 nF load) — 80 ns
Fall Time (typ, 1 nF load) — 40 ns
Protection Features — Overcurrent detection with DESAT-style comparator, fault output
동작 온도 — -40 °C to +125 °C

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