BSC019N04NSGATMA1 vs BSC030N03LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC019N04NSGATMA1 disebabkan oleh Infineon dan BSC030N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC019N04NSGATMA1 BSC030N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS (trench) —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max at VGS=10V 2.5 mΩ —
RDS(on) typ at VGS=10V 1.9 mΩ —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TA=25C 2.5 W —
Power Dissipation (PD) at TC=25C 125 W —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-TDSON-8-1 (TDSON-8 FL) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS 3
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 30 V
Continuous Drain Current (Id) @ Tc=25C — 100 A
Continuous Drain Current (Id) @ Ta=25C — 23 A
RDS(on) Max @ VGS=10V — 3 mOhm
RDS(on) Max @ VGS=4.5V — [DATA_NEEDED: typical RDS(on) at VGS=4.5V]
Gate Threshold Voltage (Vgs th) Typ — 2.2 V
Gate Charge (Qg) Typ @ VGS=15V — 55 nC
Output Charge (Qoss) — 66 pF
Input Capacitance (Ciss) Typ — 4.3 nF
Power Dissipation (Pd) @ Ta=25C — 2.5 W
Power Dissipation (Pd) @ Tc=25C — 69 W
Suhu Hubungan Operasi — -55C to +150C
Aras MSL — 1
Avalanche Rated — Yes (100% tested)

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