BSC059N04LS6ATMA1 vs BSC011N03LSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC059N04LS6ATMA1 disebabkan oleh Infineon dan BSC011N03LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC059N04LS6ATMA1 BSC011N03LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 6 (N-channel MOSFET) —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25C 17 A —
Continuous Drain Current (ID) at TC=25C 49 A —
Pulsed Drain Current (ID,pulse) at TC=25C 59 A —
On-Resistance RDS(on) max 5.9 mOhm at VGS=10 V —
Total Power Dissipation at TA=25C 3 W —
Total Power Dissipation at TC=25C 38 W —
Gate-Source Voltage (VGS) max +/-20 V —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-7 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Diode Continuous Forward Current (IS) 38 A at TC=25C —
Diode Pulse Current (IS,pulse) 236 A at TC=25C —
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 30 V
Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at TA=25°C — 37 A
Continuous Drain Current (ID) at TC=25°C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM value]
On-State Resistance RDS(on) at VGS=10V — 1.1 mΩ (typical)
Power Dissipation at TA=25°C — 2.5 W
Power Dissipation at TC=25°C — 96 W
Suhu Hubungan Operasi — -55 °C to +150 °C
Aras MSL — 1 (per JEDEC J-STD-020)

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