BSC123N08NS3GATMA1 vs BSC077N12NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC123N08NS3GATMA1 disebabkan oleh Infineon dan BSC077N12NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC123N08NS3GATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | OptiMOS 3 (120 V) |
| Channel Type | N-Channel | — |
| Configuration | Single with built-in body diode | — |
| Maximum Drain-Source Voltage (VDS) | 80 V | — |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | — |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | — |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | — |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc) | 66 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Suhu Hubungan Operasi | -55C to +150C | -55C to +150C |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant with exemption | Compliant |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Jenis Transistor | — | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) | — | 120 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | — | 13.4 A |
| Continuous Drain Current (ID) at Tc | — | 98 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max @ VGS=10V | — | 7.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | — | 139 W |
| Kiraan Pin | — | 8 |
| Automotive Grade | — | Yes (per Infineon part number suffix / datasheet) |