BSC123N08NS3GATMA1 vs IAUC60N04S6N044ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC123N08NS3GATMA1 disebabkan oleh Infineon dan IAUC60N04S6N044ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC123N08NS3GATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 3 | — |
| Channel Type | N-Channel | — |
| Configuration | Single with built-in body diode | — |
| Maximum Drain-Source Voltage (VDS) | 80 V | — |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | — |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | — |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | — |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc) | 66 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Suhu Hubungan Operasi | -55C to +150C | -55°C to +175°C |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Status RoHS | Compliant with exemption | Compliant |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Technology | — | OptiMOS-6 N-channel trench MOSFET |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| Automotive Qualification | — | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |