EP1C20F400C8 vs EP1C20F400I7 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP1C20F400C8 disebabkan oleh Altera dan EP1C20F400I7 disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP1C20F400C8 | EP1C20F400I7 |
|---|---|---|
| Merek | Altera | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | NRND | Obsolete |
| Series | Cyclone I | Cyclone |
| Logic Elements | 20,060 LE | 20,060 |
| Logic Array Blocks (LABs) | 2,006 | — |
| Embedded Memory | 294,912 bits (288 Kbit) | — |
| Embedded Multipliers | Embedded 18 × 18 blocks | — |
| Maximum User I/O | 301 | 301 |
| Process Technology | 130 nm CMOS (SRAM-based) | 0.13 µm CMOS |
| Core Supply Voltage (VCCINT) | 1.5 V | — |
| I/O Supply Voltages | 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| PLLs | 2 (one per device quadrant) | 2 |
| Maximum Internal Frequency | 275.03 MHz (typical) | — |
| Kemasan | 400-ball FBGA (FineLine BGA), 21 × 21 mm, 1.0 mm pitch | 400-ball FBGA (FineLine BGA), 21 x 21 mm, 1.0 mm pitch |
| Configuration Modes | Passive Serial (PS), Active Serial (AS), JTAG | AS, PS, JTAG |
| Operating Temperature (Commercial) | 0 °C to +85 °C | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Configuration Memory | SRAM (volatile, reload required at power-up) | — |
| Embedded Memory (bits) | — | 294,912 |
| M4K Memory Blocks | — | 60 (4 Kbit each) |
| Speed Grade | — | I7 (industrial, slowest) |
| Gambaran Suhu Operasi | — | -40C to +100C (industrial, junction) |
| Core Voltage | — | 1.5 V |
| Jenis Pemasangan | — | Surface Mount |
| Status Lingkungan Hidup | — | Obsolete (Cyclone generation discontinued) |