EP4CE55F29C8N vs EP4CE115F29C8N Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CE55F29C8N disebabkan oleh Intel dan EP4CE115F29C8N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP4CE55F29C8N EP4CE115F29C8N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup NRND Aktif
Family Cyclone IV E Cyclone IV E
Logic Elements (LE) 55,856 —
Embedded Memory 2,340 Kbits —
Embedded Multiplier Blocks (18x18) 154 —
Maximum User I/O Pins 374 —
Logic Array Blocks (LABs) 3,491 —
Process Technology 60 nm (TSMC low-power) —
Core Voltage 1.2 V —
Kemasan 780-ball FBGA (F29) 780-ball FBGA (FineLine BGA)
Jenis Pemasangan Surface Mount Surface Mount
Speed Grade 8 (commercial) C8
Temperature Grade Commercial (0 C to +85 C) —
PLLs 4 to 8 (per device) —
Configuration Method SRAM-based, volatile (requires external config device) JTAG, Passive/Active Serial, Fast Passive/Active Parallel
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes (per part marking) —
Logic Elements — 114,480
Total Memory Bits — 3,981,312 (3888 Kb)
Embedded 18x18 Multipliers — 66
General-Purpose PLLs — 4
User I/O Pins — 528
I/O Banks — 8
Process Node — 60 nm
Core Voltage (VCCINT) — 1.15 V to 1.25 V
Suhu Operasi — 0 °C to 85 °C (Commercial)
Radiation Hardened — No
Tray Quantity — 36 units

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