H5AN8G4NAFR-RDC vs H5AN8G4NAFR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G4NAFR-RDC disebabkan oleh SK hynix dan H5AN8G4NAFR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G4NAFR-RDC | H5AN8G4NAFR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| Organisasi | 1G x 4 | 2G x 4 |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Kemasan | FBGA-78 | 78-ball FBGA (PBGA78) |
| Data Rate Class | [DATA_NEEDED: exact -RDC speed bin MT/s] | — |
| CAS Latency (CL) | [DATA_NEEDED: CL for -RDC bin] | 19 (CL19, speed bin VK) |
| Antaramuka | Synchronous, differential clock CK_t/CK_c | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant (Lead-Free) | Compliant (Lead-Free & Halogen-Free) |
| Boson Bebas | Yes | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Refresh | Self-refresh and auto-refresh per DDR4 SDRAM standard | [DATA_NEEDED: Refresh specification] |
| Manufacturer | SK hynix | — |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 | Rev. 1.2 (Jul. 2017) |
| Kadar Data | — | 2666 Mbps per pin (DDR4-2666) |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Technology | — | CMOS |
| Family | — | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Application | — | Main memory requiring large density and high bandwidth |