IAUC60N04S6N031HATMA1 vs IAUC60N04S6L030HATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC60N04S6N031HATMA1 disebabkan oleh Infineon dan IAUC60N04S6L030HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ AktifInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC60N04S6N031HATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | — |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (Tj) | — |
| Kemasan | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Part Series | — | OptiMOS 6 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Suhu Hubungan Operasi | — | -55 C to +175 C |