IAUC60N06S5L073ATMA1 vs IAUC100N04S6N015ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC60N06S5L073ATMA1 disebabkan oleh Infineon dan IAUC100N04S6N015ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUC60N06S5L073ATMA1 | IAUC100N04S6N015ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tj | 60 A | — |
| On-Resistance RDS(on) max | 7.3 mΩ | — |
| Total Gate Charge (QG) | 17.4 nC | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| Kemasan | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 (SSO8) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C | -55 C to +175 C (junction, typical) |
| Technology | Trench (OptiMOS 5) | N-Channel Trench MOSFET |
| Bilangan Pin | 8 | — |
| Configuration | Single N-Channel | — |
| Qualification | AEC-Q101 automotive grade | — |
| Status RoHS | Compliant | — |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 (unlimited floor life) |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | — |
| Product Family | — | OptiMOS-6 40V |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D @ T_C=25C) | — | 100 A |
| Power Dissipation (P_D @ T_C=25C) | — | 100 W |
| R_DS(on) max @ V_GS=10V | — | 1.5 mΩ (typical, per Infineon product page) |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Automotive Qualification | — | AEC-Q101 |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |