IAUCN04S6N009TATMA1 vs IAUC100N04S6L020ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S6N009TATMA1 disebabkan oleh Infineon dan IAUC100N04S6L020ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S6N009TATMA1 IAUC100N04S6L020ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 6 40 V —
Part Number IAUCN04S6N009T —
Ordering Code (MPN) IAUCN04S6N009TATMA1 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, at Tj) 330 A —
Power Dissipation (PD, at Tc) 178 W —
On-Resistance RDS(on) max 0.9 mΩ —
Kemasan PG-LHDSO-10-2 (SSO10T) PG-TDSON-8 (SS08, 5x6 mm leadless)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 6 trench MOSFET OptiMOS 6
Automotive Qualification AEC-Q101 —
Lead-Free / RoHS Yes / Compliant —
Gate Threshold VGS(th) typ [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
FET Type — N-Channel
Drain-Source Breakdown Voltage V(BR)DSS — 40 V
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 75 W
RDS(on) Maximum @ VGS=10V, ID=50A — 2.04 mΩ
RDS(on) Typical — 2.0 mΩ
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) Typical — 2.0 V
Gambaran Suhu Operasi — -55 °C to +175 °C (TJ)
Qualification — Automotive grade
Packaging — Tape & Reel (TMA1)
Status RoHS — Compliant

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