IAUCN04S7L050HATMA1 vs IAUC100N04S6N022ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L050HATMA1 disebabkan oleh Infineon dan IAUC100N04S6N022ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ AktifInfineon
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUCN04S7L050HATMA1 | IAUC100N04S6N022ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 7 | — |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID), Tc=25°C | 65 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) @ Tc=25°C | 40 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8 (5x6 mm) leadless |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | AEC-Q100 (IAUC family) |
| Technology | Trench MOSFET, OptiMOS™ 7 40V | OptiMOS 6, N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Power Dissipation (P_D, Tc) | — | 75 W |
| R_DS(on) (typ at V_GS=10V) | — | 2.2 mOhm |
| Gambaran Suhu Operasi | — | -55C to +175C (junction) |
| Polarity | — | N-Channel enhancement mode |
| Kiraan Pin | — | 8 |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | [DATA_NEEDED: total gate charge] |
| Lead-Free | — | Yes |