IPD65R380E6ATMA1 vs IPD50R399CPATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD65R380E6ATMA1 disebabkan oleh Infineon dan IPD50R399CPATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD65R380E6ATMA1 | IPD50R399CPATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS™) | CoolMOS CP (superjunction) |
| Drain-Source Voltage (V_DS) | 650 V | 500 V |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | — |
| Kemasan | PG-TO252-3 (DPAK), surface mount | PG-TO252-3-313 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Aras MSL | 1 | — |
| Product Family | — | CoolMOS CP |
| Channel Type | — | N-Channel |
| Continuous Drain Current (I_D, Tc) | — | 9 A |
| Power Dissipation (P_D, Tc) | — | 83 W |
| On-Resistance (R_DS(on), typ) | — | 0.399 ohm |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Lead Free / RoHS | — | ROHS3 Compliant |
| Configuration | — | Single |
| Operating Mode | — | Enhancement-mode |
| Datasheet Series | — | IPD50R399CP |