IQE036N08NM6CGATMA1 vs IQE008N03LM5CGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE036N08NM6CGATMA1 disebabkan oleh Infineon dan IQE008N03LM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE036N08NM6CGATMA1 | IQE008N03LM5CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Gambaran Suhu Operasi | -55 C to +175 C (junction, Tj) | -55C to +150C (junction) |
| Kemasan | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | — |
| Technology | Trench MOSFET, OptiMOS 6 | — |
| Configuration | Single N-channel, Source-Down | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 27 A |
| Continuous Drain Current (ID) at Tc=25C | — | 253 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.85 mOhm (typ) @ 20 A |
| Gate-Source Voltage (VGS) Max | — | +/-16 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Total Gate Charge (Qg) at VGS=10V | — | 64 nC (typ) |
| Input Capacitance (Ciss) at VDS=15V | — | 5700 pF (typ) |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss typical] |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 89 W |
| Lead-Free / RoHS | — | Yes (compliant per Infineon product page) |
| AEC-Q100 Automotive | — | [DATA_NEEDED: AEC-Q100 qualification status] |