IRF640NPBF vs IRFZ48NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF640NPBF disebabkan oleh Infineon dan IRFZ48NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF640NPBF | IRFZ48NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 54 nC |
| Suhu Hubungan Operasi | -55C to +150C | -55C to +175C |
| Technology | HEXFET (5th Generation) | HEXFET (advanced planar) |
| Jenis Transistor | N-Channel Enhancement Mode | — |
| Kemasan | TO-220AB (through-hole, 3-pin) | TO-220AB (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC | — | 64 A |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 14 mΩ (maximum) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) at TC | — | 130 W |
| Lead-Free (PBF suffix) | — | Yes |
| Qualification Standard | — | Industrial market |